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IRHMS57160PBF [INFINEON]

Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3;

IRHMS57160PBF


元器件型号：	IRHMS57160PBF
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 局域网开关脉冲晶体管
PDF文件：	总8页 (文件大小：167K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHMS57160PBF参数

IRHMS57163SE

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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27 IRF

IRHMS57163SEPBF

暂无描述

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0 IRF

IRHMS57260SE

RADIATION HARDENED POWER MOSFET

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15 IRF

IRHMS57260SEPBF

Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRHMS57264SE

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL

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15 IRF

IRHMS57264SEPBF

Power Field-Effect Transistor, 37A I(D), 250V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

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0 IRF

IRHMS57Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE

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16 IRF

IRHMS58160

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

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12 IRF

IRHMS58160

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

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5 IRF

IRHMS58Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE

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10 IRF

IRHMS593064

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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15 IRF

IRHMS593160

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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32 IRF

IRHMS593260

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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15 IRF

IRHMS593260

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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16 IRF

IRHMS593Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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5 IRF

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