IRHN3054PBF [INFINEON]
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN;
| 型号： | IRHN3054PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RAD
Hard
HEXFE
T®
TECHNOLOGY
Absolute Maximum Ratings
Parameter
PD - 90884B
IRHN7054
JANSR2N7394U
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/603
Product Summary
Part Number Radiation Level RDS(on) ID
QPL Part Number
IRHN7054
IRHN3054
100K Rads (Si)
300K Rads (Si)
0.027Ω 35A JANSR2N7394U
0.027Ω 35A JANSF2N7394U
IRHN4054
IRHN8054
600K Rads (Si)
0.027Ω 35A JANSG2N7394U
1000K Rads (Si) 0.027Ω 35A JANSH2N7394U
SMD-1
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
Pre-Irradiation
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
C
35
30
D
GS
A
I
= 12V, T = 100°C Continuous Drain Current
C
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
283
DM
P
D
@ T = 25°C
C
150
W
W/°C
V
1.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
35
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
300 (5sec)
Package Mounting Surface Temperature
Weight
2.6 (Typical )
g
For footnotes refer to the last page
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1
8/9/01
IRHN7054
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
V
V
= 0V, I = 1.0mA
D
GS
∆BV
/∆T Temperature Coefficient of Breakdown
0.053
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
R
Static Drain-to-Source On-State
Resistance
0.027
0.030
4.0
Ω
V
V
= 12V, I = 30A
D
= 12V, I = 35A
DS(on)
GS
➀
GS
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
12
V
V
DS
= V , I = 1.0mA
D
GS(th)
GS
> 15V, I
Ω
g
S ( )
V
= 30A ➀
fs
DS
V
DS
= 48V ,V =0V
I
25
DSS
DS GS
V
µA
250
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
4.0
100
-100
200
60
V
= 20V
GS
= -20V
GSS
GSS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 35A
GS D
V
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
= 30V
DS
75
t
t
t
t
27
V
=30V, I = 35A
DD D
V =12V, R = 2.35Ω
GS
100
75
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
75
L
+ L
Total Inductance
S
D
nH
Measured from the center of
drain pad to center of source pad
C
Input Capacitance
4100
2000
560
V
GS
= 0V, V = 25V
DS
f = 1.0MHz
iss
C
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Min Typ Max Units
Parameter
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
35
283
1.4
280
2.2
S
A
SM
V
V
T = 25°C, I = 35A, V
j
= 0V ➀
GS
SD
S
t
Reverse Recovery Time
nS
µC
T = 25°C, I = 35A, di/dt ≤ 100A/µs
j
F
rr
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
0.83
thJC
Junction-to-PC board
6.6
°C/W Soldered to a 1 inch square clad PC board
thJ-PCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHN7054
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
2
Parameter
100K Rads(Si)
300 - 1000K Rads (Si) Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
60
2.0
60
1.25
4.5
V
= 0V, I = 1.0mA
GS D
DSS
V
V
4.0
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source" ➀
100
-100
25
100
-100
50
V
= 20V
GS
GSS
nA
I
V
= -20 V
GS
GSS
I
µA
V
=48V, V
DS
=0V
GS
DSS
R
0.027
0.04
Ω
V
= 12V, I =30A
D
GS
GS
GS
DS(on)
DS(on)
SD
On-State Resistance (TO-3)
R
Static Drain-to-Source" ➀
On-State Resistance (SMD-1)
Diode Forward Voltage" ➀
0.027
1.4
0.04
1.4
Ω
V
= 12V, I =30A
D
V
V
V
= 0V, I = 35A
S
1. Part numbers IRHN7054 (JANSR2N7394U)
2. Part number IRHN3054, IRHN4054 and IRHN8054 (JANSH2N7394U, JANSF2N7394U, JANSG2N7394U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
2
MeV/(mg/cm ))
Energy Range
(MeV) (µm)
345
305
VDS(V)
@VGS=0V@VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V
I
59.9
32.8
39
60
40
60
35
45
30
40
25
30
20
Br
36.8
80
60
40
20
0
BR
I
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHN7054
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
100
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
5.0V
°
T = 25 C
J
T = 150 C
J
10
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
50A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= 25V
DS
V
= 12V
20µs PULSE WIDTH
GS
5
6
V
7
8
9
10
11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHN7054
8000
V
20
16
12
8
= 0V,
f = 1MHz
GS
I
D
= 35A
C
= C + C
C
SHORTED
iss
gs
gd , ds
V
V
= 48V
= 30V
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds
gd
6000
4000
2000
0
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
Q
80
120
160
200
V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 25 C
J
100us
°
T = 150 C
J
1ms
10ms
°
T = 25 C
C
°
T = 150 C
J
Single Pulse
V
= 0 V
GS
3.4
1
1
1
10
100
1000
0.4
1.0
1.6
2.2
2.8
4.0
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHN7054
Pre-Irradiation
RD
VDS
50
40
30
20
10
0
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
10%
C
V
GS
t
t
t
t
f
Fig 9. Maximum Dran Current Vs.
d(on)
r
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
0.50
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
P
2
DM
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
DM
thJC C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHN7054
1200
1000
800
600
400
200
0
I
D
TOP
16A
22A
15V
BOTTOM 35A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHN7054
Pre-Irradiation
Foot Notes:
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
DD
= 25V, starting T = 25°C, L=0.82mH
J
GS DS
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 35A, V
L
=12V
GS
➀➀ Total Dose Irradiation with V Bias.
48 volt V applied and V
DS GS
irr adiation per MlL-STD-750, method 1019, condition A.
➀➀ I
SD
≤ 35A, di/dt ≤ 150A/µs,
DS
= 0 during
V
DD
≤ 60V, T ≤ 150°C
J
Case Outline and Dimensions SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
8
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