IRHNJ54230 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRHNJ54230 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 文件： | 总8页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93753A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57230
200V, N-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ57230 100K Rads (Si)
IRHNJ53230 300K Rads (Si)
IRHNJ54230 600K Rads (Si)
IRHNJ58230 1000K Rads (Si)
0.20Ω
0.20Ω
0.20Ω
0.25Ω
13A
13A
13A
13A
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
13
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
8.2
52
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
60
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
13
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
4.4
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
1.0 ( Typical )
For footnotes refer to the last page
www.irf.com
1
07/22/02
IRHNJ57230
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.26
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.2
Ω
V = 12V, I = 8.2A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
10
—
—
—
—
—
4.0
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 8.2A ➀
DS
I
10
25
V
= 160V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 13A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
7.4
20
V
= 100V
DS
t
t
t
t
25
V
= 100V, I = 13A,
DD
GS
D
100
35
V
=12V, R = 7.5Ω
G
ns
d(off)
f
30
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1043
190
20
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
13
52
1.2
343
S
A
I
SM
V
t
V
T = 25°C, I = 13A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
ns
T = 25°C, I = 13A, di/dt ≤100A/µs
j
rr
F
Q
Reverse Recovery Charge
2.25 µC
V
≤ 25V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
1.67
—
thJC
°C/W
Junction-to-PC board
6.9
soldered to a 2” square copper-clad board
thJ-PCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ57230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
200
2.0
—
—
4.0
100
-100
10
200
1.5
—
—
4.0
100
-100
25
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
V
= 20V
GSS
GS
GS
nA
I
—
—
V
= -20 V
GSS
I
—
—
µA
V
=160V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-.5)
Diode Forward Voltage
➀
—
0.204
—
0.255
Ω
V
= 12V, I = 8.2A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.2
1.2
—
—
0.25
1.2
Ω
V
= 12V, I = 8.2A
D
GS
V
SD
➀
V
V
= 0V, I = 13A
GS S
1. Part numbers IRHNJ57230, IRHNJ53230 and IRHNJ54230
2. Part number IRHNJ58230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
200
200
50
200
200
35
150
40
25
150
35
—
50
30
—
59.4
82.3
250
200
150
100
50
Br
I
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ57230
Pre-Irradiation
100
10
1
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
5.0V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25 C
J
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
13A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNJ57230
2000
1600
1200
800
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
D
= 13A
C
= C + C
V
V
V
= 160V
= 100V
= 40V
iss
gs
gd ,
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
C
oss
400
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
°
T = 25 C
100us
J
1ms
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.4
1
10
100
1000
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
IRHNJ57230
Pre-Irradiation
RD
15
12
9
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
V
3
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ57230
100
80
60
40
20
0
I
D
TOP
5.8A
8.2A
BOTTOM 13A
15V
DRIVER
L
V
D S
D.U.T
.
R
G
+
V
D D
-
I
AS
2VGS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ57230
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 50V, starting T = 25°C, L= 0.67 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 13A, V
= 12V
GS
L
➀ Total Dose Irradiation with V Bias.
➀ I
≤ 13A, di/dt ≤ 274A/µs,
DS
applied and V = 0 during
SD
DD
160 volt V
DS
V
≤ 200V, T ≤ 150°C
GS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-0.5
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Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/02
8
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