IRHNJ9230 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRHNJ9230 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97821
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ9230
200V, P-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNJ9230
100K Rads (Si)
300K Rads (Si)
0.8Ω
0.8Ω
-6.5A
-6.5A
IRHNJ93230
SMD-0.5
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
n ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-6.5
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
-4.1
-26
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
± 20
165
GS
E
mJ
A
AS
I
-6.5
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
-27
T
-55 to 150
J
T
Storage Temperature Range
°C
g
STG
(for 5s)
Package Mounting Surface Temp.
Weight
300
1.0 (Typical)
For footnotes, refer to the last page
www.irf.com
1
08/01/14
IRHNJ9230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-200
—
—
V
V
=0 V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.27
—
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.8
V
= -12V, I = -4.1A
GS D
Ω
DS(on)
V
g
-2.0
2.0
—
—
—
—
—
-4.0
—
-25
-250
V
S
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
V
= -15V, I
= -4.1A
DS
DS
I
V
DS
= -160V,V = 0V
GS
DSS
µA
—
V
= -160V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
45
10
25
30
50
75
65
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -12V, I = -6.5A
g
gs
gd
d(on)
r
GS
D
V
DS
= -100V
t
t
t
t
V
DD
V
= - 100V, I = - 6.5A,
= -12V, R = 7.5Ω
GS G
D
ns
d(off)
f
L
L
—
S +
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1360
190
40
—
—
—
V
GS
= 0V, V
= - 25V
iss
oss
rss
DS
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-6.5
-26
-5.0
400
3.4
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = -6.5A, V
= 0V Ã
j
S
GS
T = 25°C, I = -6.5A, di/dt ≤ -100A/µs
j
F
V
Q
≤ -25V Ã
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC Board
—
—
—
12
1.67
—
thJC
thJPCB
°C/W
Soldered to 1” Sq. Copper clad Board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes, refer to the last page
2
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Radiation Characteristics
IRHNJ9230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
1
Parameter
100K Rads(Si)
Min
300K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-200
- 2.0
—
—
—
—
-200
-2.0
—
—
—
—
-5.0
-100
100
V
= 0V, I = -1.0mA
DSS
GS D
V
V
-4.0
-100
100
-25
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
V
= -20V
= 20V
GSS
GS
V
GS
nA
I
GSS
I
-25
µA
V
= -160V, V = 0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Ã
—
0.804
—
0.804
Ω
V
= -12V, I = -4.1A
D
GS
DS(on)
R
DS(on)
Ã
—
—
0.8
—
—
0.8
Ω
V
GS
= -12V, I = -4.1A
D
V
SD
Ã
-5.0
-5.0
V
V
= 0V, I = -6.5A
GS S
1. Part number IRHNJ9230
2. Part number IRHNJ93230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
43.0
39.0
-200
-200
-200
-200
-200
-125
-200
-75
—
—
36.8
305
-250
-200
-150
-100
-50
Cu
Br
0
0
5
10
15
20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
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3
IRHNJ9230
Pre-Irradiation
100
100
10
1
VGS
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
BOTTOM -5.0V
BOTTOM -5.0V
10
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
°
°
J
1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.5
-6.5A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
1
5.0
6.0
7.0
8.0 9.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHNJ9230
20
16
12
8
2500
I
D
= -6.5A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
gs
C
SHORTED
iss
V
V
V
=-160V
=-100V
=-40V
DS
DS
DS
C
= C
gd
= C + C
ds gd
rss
C
2000
1500
1000
500
0
oss
C
iss
C
4
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
10
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
4.0
0.1
0.0
0.1
1.0
2.0
3.0
5.0
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHNJ9230
Pre-Irradiation
RD
VDS
8.0
6.0
4.0
2.0
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
0.0
25
10%
50
75
100
125
150
°
, Case Temperature ( C)
T
C
Fig 9. Maximum Drain Current Vs.
90%
CaseTemperature
V
DS
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
0.02
P
2
DM
0.1
t
1
t
0.01
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ9230
L
V
DS
400
300
200
100
0
I
D
TOP
-2.9A
-4.1A
BOTTOM -6.5A
D.U.T
AS
R
G
V
DD
A
I
DRIVER
-V20GVS
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
I
J
AS
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ9230
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with V
À
Repetitive Rating; Pulse width limited by
Ä
Bias.
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
Á V
= -50V, starting T = 25°C, L =11mH
J
L
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -6.5A, V
= -12V
GS
Å Total Dose Irradiation with V Bias.
 I
≤ -6.5A, di/dt ≤ -375A/µs,
DS
= 0 during
SD
DD
-160 volt V
applied and V
V
≤ -200V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2014
8
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