IRHY57234CMSES [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRHY57234CMSES |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：2397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-93823D
IRHY57234CMSE
JANSR2N7556T3
250V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE(TO-257AA)
REF: MIL-PRF-19500/705
R
5TECHNOLOGY
Product Summary
Part Number
Radiation Level
RDS(on)
ID
QPL Part Number
IRHY57234CMSE 100 kRads(Si)
9.6A
JANSR2N7556T3
0.41
Description
Features
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of 80
(MeV/(mg/cm2). The combination of low RDS(on) and low
gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Eyelets
Light Weight
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
9.6
A
6.0
38.4
75
IDM @TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
0.6
± 20
59
VGS
EAS
IAR
mJ
A
9.6
7.5
2.4
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
-55 to + 150
TSTG
°C
g
300 (0.063 in.(1.6mm) from case for 10s)
4.3 (Typical)
Weight
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-03-19
IRHY57234CMSE
JANSR2N7556T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
Parameter
Min. Typ. Max. Units
250 ––– –––
––– 0.30 ––– V/°C Reference to 25°C, ID = 1.0mA
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State Resistance
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ
RDS(on)
––– ––– 0.41
VGS = 12V, ID2 = 6.0A
V
VGS(th)
Gate Threshold Voltage
2.5 ––– 4.5
––– –––
VDS = VGS, ID = 1.0mA
Gfs
IDSS
Forward Transconductance
S
V
DS = 15V, ID2 = 6.0A
VDS = 200V, VGS = 0V
DS = 200V,VGS = 0V,TJ =125°C
VGS = 20V
GS = -20V
ID1 = 9.6A
nC VDS = 125V
GS = 12V
––– ––– 10
––– ––– 25
––– ––– 100
––– ––– -100
––– ––– 32
––– ––– 11
––– ––– 16
––– ––– 25
––– ––– 100
––– ––– 35
––– ––– 30
Zero Gate Voltage Drain Current
µA
nA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
VDD = 125V
ID1 = 9.6A
RG = 7.5
ns
td(off)
tf
VGS = 12V
Measured from drain lead
(6mm/0.25in.from package) to
source lead (6mm/0.25in. from
package)
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Ls +LD
Total Inductance
––– 6.8 –––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
––– 1016 –––
––– 157 –––
––– 9.0 –––
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
––– –––
––– ––– 38.4
––– ––– 1.2
––– ––– 300
––– ––– 3.1
9.6
A
ISM
VSD
trr
V
TJ = 25°C,IS =9.6A,VGS = 0V
TJ = 25°C, IF=9.6A, VDD ≤25V
di/dt = 100A/µs
Reverse Recovery Time
ns
µC
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
1.67
RJC
°C/W
Junction-to-Ambient
–––
–––
80
RJA
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L =1.3mH, Peak IL = 9.6A, VGS = 12V
ISD 9.6A, di/dt 394A/µs, VDD 250V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-03-19
IRHY57234CMSE
JANSR2N7556T3
Radiation Characteristics
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
100 kRads (Si)1
Symbol
Parameter
Units
Test Conditions
Min.
250
2.0
Max.
–––
4.5
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
VGS = 20V
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
–––
–––
–––
100
-100
10
nA
nA
µA
IGSS
VGS = -20V
IDSS
VDS = 200V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on)
–––
0.414
VGS = 12V, ID2 = 6.0A
Static Drain-to-Source
On-State Resistance (TO-257AA)
RDS(on)
VSD
–––
–––
0.41
1.2
VGS = 12V, ID2 = 6.0A
VGS = 0V, IS = 9.6A
Diode Forward Voltage
V
1. Part number IRHY57234CMSE (JANSR2N7556T3)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@VGS = 0V @VGS = -5V @VGS = -10V @VGS = -15V @VGS = -20V
38 ± 5%
61 ± 5%
84 ± 5%
300 ± 7.5%
330 ± 7.5%
350 ± 10%
38 ± 7.5%
31 ± 10%
28 ± 7.5%
250
250
250
250
250
250
250
250
225
250
250
175
250
240
50
300
250
200
150
100
50
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-03-19
IRHY57234CMSE
JANSR2N7556T3
Pre-Irradiation
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
4
International Rectifier HiRel Products, Inc.
2019-03-19
IRHY57234CMSE
JANSR2N7556T3
Pre-Irradiation
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
International Rectifier HiRel Products, Inc.
5
2019-03-19
IRHY57234CMSE
JANSR2N7556T3
Pre-Irradiation
V
(BR)DSS
t
p
I
AS
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
International Rectifier HiRel Products, Inc.
Fig 14b. Switching Time Waveforms
6
2019-03-19
IRHY57234CMSE
JANSR2N7556T3
Pre-Irradiation
Case Outline and Dimensions — TO-257AA
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
7
International Rectifier HiRel Products, Inc.
2019-03-19
IRHY57234CMSE
JANSR2N7556T3
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
8
International Rectifier HiRel Products, Inc.
2019-03-19
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