IRHYK57133CMSE [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA); 抗辐射功率MOSFET表面贴装（低电阻TO- 257AA ）
| 型号： | IRHYK57133CMSE |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA) |
| 文件： | 总8页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD - 96898
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (Low-Ohmic TO-257AA)
IRHYK57133CMSE
130V, N-CHANNEL
TECHNOLOGY
5
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHYK57133CMSE 100K Rads (Si)
0.082Ω 20A
Low-Ohmic
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
= 12V, T = 25°C Continuous Drain Current
20
12.5
80
D
GS
GS
C
A
I @ V
D
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
73
mJ
A
AS
I
20
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
11.3
-55 to 150
T
J
T
Storage Temperature Range
oC
g
STG
Pack. Mounting Surface Temp.
Weight
300 (for 5s)
3.7 (Typical)
For footnotes refer to the last page
www.irf.com
1
10/28/04
IRHYK57133CMSE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
130
—
—
V
V
= 0V, I = 1.0mA
GS D
DSS
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.09
—
V/°C Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
Ã
R
Static Drain-to-Source On-State
Resistance
—
—
0.082
Ω
V
GS
= 12V, I = 12.5A
D
DS(on)
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.5
7.4
—
—
—
—
—
4.5
—
10
25
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
V
DS
= 15V, I
= 12.5A Ã
DS
I
V
= 104V ,V =0V
GS
DSS
DS
GS
µA
—
V
= 104V,
DS
= 0V, T = 125°C
V
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
48
16
18
20
100
35
40
—
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 20A
g
gs
gd
d(on)
r
GS
D
= 65V
V
DS
t
t
t
t
V
DD
= 65V, I = 20A
=12V, R = 7.5Ω
GS G
D
V
ns
d(off)
f
L
+ L
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
S
D
nH
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1020
285
10
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
pF
oss
rss
g
C
R
0.77
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
20
80
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
200
1.5
V
ns
µC
T = 25°C, I = 20A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 20A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
thJC
thJA
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHYK57133CMSE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (Low-Ohmic TO-257)
130
2.0
—
—
—
—
4.5
100
-100
10
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
I
I
V
GS
= 20V
GSS
GSS
DSS
nA
µA
V
GS
= -20V
V
= 104V, V = 0V
GS
DS
GS
GS
R
DS(on)
—
0.082
Ω
V
= 12V, I = 12.5A
D
R
DS(on)
—
—
0.082
1.2
Ω
V
= 12V, I = 12.5A
D
V
Diode Forward Voltage
V
V
= 0V, I = 20A
D
GS
SD
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
130
130
130
130
130
120
130
130
30
130
100
—
130
50
—
59.8
82.3
150
120
90
60
30
0
Br
I
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHYK57133CMSE
Pre-Irradiation
100
10
1
100
10
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
0.1
5.0V
60µs PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH Tj = 25°C
0.1
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 20A
D
T
= 150°C
J
T
= 25°C
J
1
0.1
0.01
V
= 50V
DS
V
= 12V
GS
60µs PULSE WIDTH
5
6
7
8
9
10 11 12 13
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
T
J
, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHYK57133CMSE
2400
20
16
12
8
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 104V
= 65V
= 26V
C
C
C
+ C , C
SHORTED
I
= 20A
DS
DS
DS
iss
gs
gd
ds
D
= C
2000
1600
1200
800
400
0
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
5
10 15 20 25 30 35 40
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G,
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T = 150°C
J
T
= 25°C
J
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
GS
1.0
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
1
10
100
1000
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHYK57133CMSE
Pre-Irradiation
RD
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.1
P
0.05
0.02
DM
t
SINGLE PULSE
1
( THERMAL RESPONSE )
0.01
t
2
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYK57133CMSE
140
120
100
80
I
D
15V
TOP
8.9A
12.6A
BOTTOM 20A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
60
DD
-
I
A
AS
VG
2
S
0.01
Ω
t
p
40
Fig 12a. Unclamped Inductive Test Circuit
20
0
25
50
75
100
125
150
V
(BR)DSS
Starting T , Junction Temperature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHYK57133CMSE
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 0.36 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 20A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 20A, di/dt ≤ 690A/µs,
DS
= 0 during
SD
DD
104 volt V
applied and V
V
≤ 130V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — Low Ohmic TO-257AA
0.13 [.005]
10.66 [.420]
10.42 [.410]
5.08 [.200]
4.83 [.190]
A
10.92 [.430]
10.42 [.410]
B
C
15.49 [.610]
14.73 [.580]
1
2
3
0.889 [.035]
MAX.
3.17 [.125]
2.92 [.115]
2.79 [.110]
2.29 [.090]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X
0.25 [.010]
B
A
NOT ES:
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2004
8
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