IRIS4009K [INFINEON]
30W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package ; 30W输出AC- DC切换器集成在一个TO- 262 （ 5引脚）封装\n
| 型号： | IRIS4009K |
| 厂家： | 
Infineon |
| 描述： | 30W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
|
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60196
( )
IRIS4009 K
INTEGRATED SWITCHER
Features
• Primary current mode control, and secondary
Packages
voltage mode control
•
Vcc Over-voltage protection (latched)
•
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•
5 pin TO-220 and TO-262
•
8.0Ω Rds(on) max/ 650V MOSFET
Fully Characterized Avalanche Energy
•
IRIS4009
IRIS4009K
5 Lead TO-220
5 Lead TO-262
Description
The IRIS4009(K) is a dual mode voltage and current controller combined with a MOSFET in a single package.
The IRIS4009(K) is designed for use in universal and single input AC/DC and DC/DC switching power supplies
and is capable of powers up to 30W for a universal line input. The device can operate in either a quasi-resonant or
Pulse Ratio Control (PRC) mode, and thereby variable frequency operation.
Typical Connection Diagram
Vin
(AC/
DC)
Vout
(DC)
3
Drain
Vcc
4
5
IRIS4009(K)
FB
Gnd
Source
1
2
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
DesignTips and Application Notes (AN1018a,
AN1024a, AN1025) for proper circuit board
layout.
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1
IRIS4009(K)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition
Terminals Max. Ratings Units
Note
IDpeak
Peak drain current
3-1
3.9
Single pulse
IDmax
Maximum switching current
3-1
1.5
V
= 0.78V
A
2-3
Tc=25oC
EAS
Single pulse avalanche energy
3-1
100
mJ
V
=50V,L=20mH,
dd
G=12V, Ipk=1.5A
VCC
VTH
Power supply voltage
4-3
5-2
35
6
V
OCP/FB terminal voltage
Power dissipation for MOSFET
P
62.5
1.1
With infinite heatsink
Without heatsink
D1
3-1
W
P
Power dissipation for control part (MIC)
Thermal resistance, junction to case
Junction temperature
4-2
—
—
—
—
0.8
Specified by VIN x IIN
D2
Rth
JC
2.0
°C/W
T
T
T
-40-125
-40-125
-20-125
J
S
f
Storage temperature
Internal frame temperature in operation
Refer to recommended
operating temperature
°C
T
T
Ambient operating temperature
—
—
-20-125
300
OP
L
Lead temp. (soldering, 10 seconds)
Recommended Operating Conditions
Time for input of quasi resonant signals.
Tth(2) ≥1.0µs
For the Quasi resonant signal inputted to the VDCP/FB
terminal at the time of quasi resonant operation, the
signal should be wider thant Tth(2)
V
OCP/FB
Vth(2)
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2
IRIS4009(K)
Electrical Characteristics (for Control IC)
V
= 18V, (T = 25°C) unless otherwise specified.
A
CC
Symbol
VCCUV+
VCCUV-
IQCCUV
IQCC
Definition
Min. Typ. Max. Units Test Conditions
VCC supply undervoltage positive going threshold
VCC supply undervoltage negative going threshold
UVLO mode quiescent current
14.4
16
17.6
V
9
10
11
—
—
100
30
µA
VCC < VCCUV+
Quiescent operating VCC supply current
—
—
mA
TOFF/(MAX) Maximum OFF time
40
—
60
µsec
TTH(2)
TOFF/(MIN)
VTH(1)
Minimum input pulse width for quasi resonant signals
—
—
1.0
1.5
0.78
1.6
1.7
24.5
400
8.4
—
Minimum OFF time
—
—
OCP/FB terminal threshold voltage 1
OCP/FB terminal threshold voltage 2
OCP/FB terminal sink current
VCC overvoltage protection limit
Latch circuit holding current
0.68
1.3
1.1
20.5
—
0.73
1.45
1.35
22.5
—
V
VTH(2)
IOCP/FB
VCC(OVP)
ICC(LA)
mA
V
µA
V
VCC(LaOFF) Latch circuit reset voltage
6.6
140
—
TJ(TSD)
Thermal shutdown activation temperature
—
oC
Electrical Characteristics (for MOSFET)
(T = 25°C) unless otherwise specified.
A
Symbol
Definition
Min. Typ. Max. Units Test Conditions
VDSS
IDSS
Drain-to-source breakdown voltage
Drain leakage current
650
—
—
—
—
V
300
µA
Vds=520V,VCC=0V
Tj =125oC
RDS(ON)
On-resistance
—
—
8.0
Ω
V3-1=10V, ID=0.85A
t
Rise time (10% to 90%)
Thermal resistance
—
—
—
—
120
2.0
ns
oC/W
r
Between junction
and case
THj-C
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3
IRIS4009(K)
Block Diagram
4
Vcc
3
D
START
REG.
O.V.P
LATCH
DRIVE
1
S
-
Vth(1)
OSCILLATOR
T.S.D
+
5
Comp.1
OCP/
FB
-
Vth(2)
+
Comp.2
2
Ground
Pin # Symbol
Description
Lead Assignments
1
2
3
4
S
Ground
D
MOSFET Source terminal
Ground terminal
MOSFET Drain terminal
Control circuit supply voltage
Vcc
1
2
3
4
5
Overcurrent detection, and Voltage mode control
feedback signal
5
OCP/FB
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
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4
IRIS4009(K)
Case outline
01-6020 00
01-3042 01 (TS-001)
5-Lead TO-220
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5
IRIS4009(K)
Case outline
B
4.83 [.190]
4.06 [.160]
10.29 [.405]
1.40 [.055]
9.65 [.380]
MAX.
6 .2 2 [.2 4 5 ]
MIN
1.32 [.052]
1.22 [.048]
6
8 .0 0 [.3 1 5 ]
MAX
9.65 [.380]
8.64 [.340]
6
1
2
3
4
5
C
12.70 [.500]
14.73 [.580]
0.63 [.025]
0.31 [.012]
1 .0 1 [.0 4 0 ]
5X
5X
0 .5 1 [.0 2 0 ]
2.92 [.115]
2.16 [.085]
1.70 [.067]
4X
0.25 [.010]
A
B
5-Lead TO-262
IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 12/3/2001
www.irf.com
6
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