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IRKDS303/100P [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 100V V(RRM), Silicon, TO-240AA, ROHS COMPLIANT PACKAGE-3;
IRKDS303/100P
型号： IRKDS303/100P
厂家： Infineon    Infineon
描述：

Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 100V V(RRM), Silicon, TO-240AA, ROHS COMPLIANT PACKAGE-3

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Bulletin I27292 12/06  
IRKDS303/100P  
SCHOTTKY RECTIFIER  
150 Amp  
Description/ Features  
The IRKDS303.. Schottky rectifier doubler module has been optimized for  
low reverse leakage at high temperature. The proprietary barrier technology  
allows for reliable operation up to 150°C junction temperature. Typical  
applications are in high current switching power supplies, plating power  
supplies, UPS systems, converters, free-wheeling diodes, welding, and  
reverse battery protection.  
(1)  
~
+
(2)  
175°C T operation  
J
Low forward voltage drop  
High frequency operation  
-
(3)  
Guard ring for enhanced ruggedness and long term  
reliability  
UL pending  
TOTALLY LEAD-FREE, RoHS Compliant  
Mechanical Description  
The Generation V of Add-A-pak module combine the  
The Generation V of AAP module is manufactured without  
hard mold, eliminating in this way any possible direct  
stress on the leads.  
excellent thermal performance obtained by the usage  
of Direct Bonded Copper substrate with superior me-  
chanical ruggedness, thanks to the insertion of a solid  
Copper baseplate at the bottom side of the device.  
The Cu baseplate allow an easier mounting on the  
majority of heatsink with increased tolerance of sur-  
face roughness and improve thermal spread.  
The electrical terminals are secured against axial pull-out:  
they are fixed to the module housing via a click-stop  
feature already tested and proved as reliable on other IR  
modules.  
Major Ratings and Characteristics  
Characteristics  
Values  
Units  
I
Rectangular  
waveform  
150  
A
F(AV)  
V
I
100  
V
A
RRM  
@tp=5μssine  
22000  
FSM  
V
@150Apk, T =125°C  
J
0.8  
V
F
Outline TO-240AA  
T
range  
-55to175  
°C  
J
www.irf.com  
1
IRKDS303/100P  
Bulletin I27292 12/06  
Voltage Ratings  
Parameters  
IRKDS303/100P  
VR  
Max. DC Reverse Voltage (V)  
100  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
Values Units  
Conditions  
IF(AV) Max. Average Forward Per Module  
300  
150  
A
50%dutycycle@TC =96°C, rectangularwaveform  
Current  
Per Leg  
IFSM Max. Peak One Cycle Non-Repetitive  
Surge Current  
22000  
2500  
15  
5μs Sineor3μsRect. pulse  
Following any rated  
load condition and with  
rated VRRM applied  
A
10msSineor6msRect. pulse  
EAS Non-Repetitive Avalanche Energy  
mJ TJ = 25°C, IAS = 5.5Amps,L=1mH  
IAR  
Repetitive Avalanche Current  
1
A
Current decaying linearly tozero in1μsec  
Frequency limited byTJ max. VA =1.5xVR typical  
Electrical Specifications  
Parameters  
Values Units  
Conditions  
VFM Max. Forward Voltage Drop  
0.95  
1.28  
0.8  
V
V
V
@ 150A  
TJ = 25 °C  
@ 300A  
(1)  
@ 150A  
TJ = 125 °C  
1.06  
4.5  
V
@ 300A  
IRM Max. Reverse Leakage Current  
(1)  
mA TJ = 25 °C  
mA TJ = 125 °C  
VR = rated VR  
60  
4150  
7.0  
CT  
LS  
Max. Junction Capacitance  
Typical Series Inductance  
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C  
nH From top of terminal hole to mounting plane  
V/ μs (Rated VR)  
dv/dt Max. Voltage Rate of Change  
VINS RMS isolation voltage (1 sec)  
10000  
3500  
V
50 Hz, circuit to base, all terminals shorted  
(1) Pulse Width < 500μs  
Thermal-Mechanical Specifications  
Parameters  
Values Units  
Conditions  
TJ  
Max. Junction Temperature Range  
-55 to175  
-55 to175  
0.45  
°C  
°C  
Tstg Max. Storage Temperature Range  
RthJC Max. Thermal Resistance, Junction  
toCase (Per Leg)  
°C/W DC operation  
RthCS Max. Thermal Resistance, case  
to Heatsink  
0.1  
°C/W Mounting Surface, smooth and greased  
wt  
T
Approximate Weight  
Mounting Torque ± 10% to heatsink  
busbar  
110 (4)  
gr(oz)  
Nm  
5
4
Case Style  
TO-240AA  
JEDEC  
www.irf.com  
2
IRKDS303/100P  
Bulletin I27292 12/06  
1000  
100  
10  
1000  
100  
10  
175°C  
Tj = 175°C  
125°C  
1
0.1  
25°C  
0.01  
0.001  
10 20 30 40 50 60 70 80 90 100  
Reverse Voltage-VR (V)  
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage  
10000  
Tj = 25°C  
Tj = 125°C  
1000  
100  
Tj = 25°C  
1
0
10 20 30 40 50 60 70 80 90 100  
Reverse Voltage-VR (V)  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Forward Voltage Drop-VFM (V)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage  
Fig. 1-Max. Forward Voltage Drop Characteristics  
1
D = 0.75  
D = 0.5  
D = 0.33  
D = 0.25  
0.1  
D = 0.2  
Single Pulse  
(Thermal Resistance)  
0.01  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
t1, Rectangular Pulse Duration (Seconds)  
Fig. 4-Max. Thermal Impedance ZthJC Characteristics  
3
www.irf.com  
IRKDS303/100P  
Bulletin I27292 12/06  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
180°  
120°  
90°  
60°  
30°  
Square wave (D=0.50)  
80% rated Vr applied  
DC  
RMS limit  
DC  
60  
60  
40  
40  
see note (2)  
20  
0
20  
0
0
50  
100  
150  
200  
250  
0
50 100 150 200 250 300 350  
Average Forward Current - IF(AV)(A)  
Average Forward Current - IF(AV) (A)  
Fig. 6-Forward Power Loss Characteristics  
Fig. 5-Max. Allowable CaseTemperature  
Vs. Average Forward Current  
100000  
At Any Rated Load Condition  
And With Rated V  
Following Surge  
Applied  
RRM  
10000  
1000  
10  
100  
1000  
10000  
Square Wave Pulse Duration - tp (microsec)  
Fig.7-Max. Non-Repetitive Surge Current  
L
HIGH-SPEED  
SWITCH  
IRFP460  
DUT  
FREE-WHEEL  
DIODE  
Rg = 25 o hm  
Vd = 25 Volt  
+
CURRENT  
MONITOR  
40HFL40S02  
Fig. 8-Unclamped Inductive Test Circuit  
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC  
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);  
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR  
www.irf.com  
4
IRKDS303/100P  
Bulletin I27292 12/06  
Outline Table  
Dimensions are in millimeters and [inches]  
Ordering Information Table  
Device Code  
IR KD  
S
30  
3
/
100  
P
7
1
2
3
4
5
6
1
2
-
-
International Rectifier  
Circuit Configuration  
KC = Add-A-Pak - 2 diodes in Series  
S = Schottky Diode  
3
4
5
6
7
-
-
-
-
-
Average Rating (x10)  
Product Silicon Identification  
Voltage Rating (100 = 100V)  
Lead-Free  
5
www.irf.com  
IRKDS303/100P  
Bulletin I27292 12/06  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level and Lead-Free.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 12/06  
www.irf.com  
6

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