IRKH27/12AS90PBF [INFINEON]
Silicon Controlled Rectifier, 42.39A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-4;
| 型号： | IRKH27/12AS90PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 42.39A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-4 局域网 栅 栅极 |
| 文件： | 总8页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27130 rev. G 10/02
IRK.26 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
ADD-A-pakTM GEN V Power Modules
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
Full compatible TO-240AA
27 A
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
UL E78996 approved
3500VRMS isolating voltage
Heatsink grounded
Mechanical Description
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other IR modules.
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Electrical Description
These modules are intended for general purpose
high voltage applications such as high voltage regu-
lated power supplies, lighting circuits, temperature
and motor speed control circuits, UPS and battery
charger.
TheGenerationVofAAPmoduleismanufacturedwithout
hard mold, eliminating in this way any possible direct
stress on the leads.
Major Ratings and Characteristics
Parameters
IT(AV)or IF(AV)
@85°C
IRK.26
Units
27
60
A
IO(RMS) (*)
A
A
A
ITSM @50Hz
IFSM @60Hz
400
420
800
730
8000
2
2
I t @50Hz
A s
2
@60Hz
A s
2
2
I √t
A √s
VRRM range
400to1600
- 40 to 125
- 40 to125
V
TSTG
oC
oC
TJ
(*) As AC switch.
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1
IRK.26 Series
Bulletin I27130 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
IDRM
125°C
Voltage
Type number
Code
-
V
V
V
mA
04
06
08
400
500
400
600
700
600
800
900
800
IRK.26
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.26
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
27
27
180o conduction, half sine wave,
TC=85oC
IF(AV) Max. average forward
current (Diodes)
IO(RMS Max. continuous RMS
) on-state current.
60
or
I(RMS)
I(RMS)
As AC switch
A
ITSM Max. peak, one cycle
400
420
335
350
470
490
800
730
560
510
1100
1000
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ =TJmax.
or
non-repetitive on-state
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
IFSM or forward current
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
Initial TJ =TJ max.
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
A2s
t=8.3ms no voltage reapplied
I2√t
Max. I2√t for fusing (1)
8000
A2√s
t=0.1to10ms,no voltage reappl. TJ=TJ max
TJ = TJ max
VT(TO) Max. value of threshold
voltage (2)
0.92
0.95
Low level (3)
High level (4)
Low level (3)
High level (4)
ITM=π xIT(AV)
V
r
Max. value of on-state
slope resistance (2)
12.11
11.82
TJ = TJ max
TJ =25oC
t
mΩ
VTM Max. peak on-state or
VFM forward voltage
1.95
V
IFM=π xIF(AV)
di/dt Max. non-repetitive rate
of rise of turned on
current
TJ = 25oC, from 0.67 VDRM
TM =π x IT(AV), I = 500mA,
,
150
200
400
A/µs
mA
I
g
t < 0.5 µs, t > 6 µs
p
r
IH
Max. holding current
TJ =25oC,anodesupply=6V,
resistive load, gate open circuit
IL
Max. latching current
TJ=25oC,anode supply=6V,resistive load
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.26 Series
Bulletin I27130 rev. G 10/02
Triggering
Parameters
IRK.26
Units
Conditions
PGM Max. peak gate power
10
2.5
2.5
W
A
PG(AV) Max. average gate power
IGM
Max. peak gate current
-VGM Max.peak negative
gate voltage
10
4.0
2.5
1.7
TJ =-40°C
TJ =25°C
TJ =125°C
V
VGT Max. gate voltage
required to trigger
Anode supply=6V
resistive load
270
150
80
TJ =-40°C
TJ =25°C
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
TJ =125°C
TJ =125oC,
rated VDRM applied
VGD Max. gate voltage
that will not trigger
0.25
6
V
TJ =125oC,
rated VDRM applied
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.26
15
Units
mA
V
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 125oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
500
50 Hz, circuit to base, all terminals
shorted
dv/dt Max. critical rate of rise
V/µs
TJ = 125oC, linear to 0.67 VDRM
,
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.26
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
-40to125
stg
RthJC Max. internal thermal
resistance, junction
to case
0.31
Per module,DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mounting torque±10%
to heatsink
busbar
Nm
3
wt
Approximate weight
Case style
110(4)
gr(oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRK.26
Units
°C/W
180o
0.23
120o
0.27
90o
0.34
60o
0.48
30o
0.73
180o
0.17
120o
0.28
90o
0.36
60o
0.49
30o
0.73
3
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IRK.26 Series
Bulletin I27130 rev. G 10/02
Ordering Information Table
Device Code
IRK.27 types
With no auxiliary cathode
IRK
T
26
/
16
A
S90
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
* * Available with no auxiliary cathode.
To specify change:
26 to 27
Voltage code (See Voltage Ratings table)
A : Gen V
e.g. : IRKT27/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
~
(1)
~
(1)
~
ꢀ1)
-
+
(2)
+
(2)
+
(2)
+
ꢀ2)
-
(3)
-
(3)
-
(3)
+
ꢀ3)
G1 K1
(4) (5)
G1
(4) (5)
K2 G2
(7) (6)
G1 K1
K2 G2
(7) (6)
K1
ꢀ4) ꢀ5)
NOTE: To order the Optional Hardware see Bulletin I27900
www.irf.com
4
IRK.26 Series
Bulletin I27130 rev. G 10/02
130
120
110
100
90
130
120
110
100
90
IRK.26.. Se rie s
IRK.26.. Se rie s
(DC ) = 0.62 K/ W
R
(DC) = 0.62 K/ W
R
thJC
thJC
Co nd uc tio n Pe rio d
C o nd uc tio n Ang le
30°
30°
60°
60°
90°
90°
120°
20
180°
25
120°
180°
30
DC
80
80
0
10
20
40
50
0
5
10
15
30
Ave ra g e On-sta te Curre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
50
40
30
20
10
0
70
60
50
40
30
20
10
0
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
C o nd uc tio n Ang le
C o nd uc tio n Pe rio d
IRK.26.. Se rie s
Pe r Junc tion
IRK.26.. Se rie s
Pe r Junc tio n
= 125°C
T = 125°C
J
T
J
0
5
10
15
20
25
30
0
10
20
30
40
50
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
400
350
300
250
200
150
400
350
300
250
200
150
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tion Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Cond ition And With
Ra te d V
Ap p lie d Following Surg e .
RRM
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.26.. Se rie s
Pe r Junc tion
IRK.26.. Se rie s
Pe r Junc tion
0.01
0.1
Pulse Tra in Dura tio n (s)
1
1
10
100
Num b e r O f Eq ua l Am p litud e Ha lf Cyc le Curre nt Pulse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
5
www.irf.com
IRK.26 Series
Bulletin I27130 rev. G 10/02
100
90
80
70
60
50
40
180°
120°
90°
60°
30°
Cond uc tion Ang le
30
20
10
0
IRK.26.. Se rie s
Pe r Mod ule
T
= 125°C
J
0
10
20
30
40
50
6
0
20
40
60
80 100 120 140
Ma xim um Allow a b le Am b ie nt Te m p e ra ture (°C)
Tota l RMS Outp ut Curre nt (A)
Fig. 7 - On-state Power Loss Characteristics
250
200
150
100
50
R
0
.
3
=
K
/
0
.
W
1
K
/
W
0
.
5
-
K
D
/
W
e
180°
(Sine )
180°
l
t
a
R
(Re c t)
1
K
/
W
1
.
5
K
/
W
2 x IRK.26.. Se rie s
Sing le Pha se Brid g e
C onne c te d
8
K
/ W
T
= 125°C
J
0
0
10
20
30
40
50
60
20
40
60
80 100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allowa ble Am b ie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
350
300
250
200
150
100
50
120°
(Re c t)
3 x IRK.26.. Se rie s
Thre e Pha se Brid g e
C o nne c te d
T = 125°C
J
0
0
10 20 30 40 50 60 70 80
20
40
60
80
100 120 140
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )
To ta l Outp ut Curre nt (A)
Fig. 9 - On-state Power Loss Characteristics
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6
IRK.26 Series
Bulletin I27130 rev. G 10/02
1000
100
10
T = 25°C
J
T = 125°C
J
IRK.26.. Se rie s
Pe r Junc tio n
1
0
1
2
3
4
5
6
7
Insta nta ne o us On-sta te Vo lta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
1
Ste a d y Sta te Va lue :
= 0.62 K/W
R
thJC
(DC Op e ra tio n)
0.1
IRK.26.. Se rie s
0.01
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 m s
(3) PGM = 20 W, tp = 25 m s
(4) PGM = 10 W, tp = 5 m s
a )Re c o m m e nd e d lo a d line for
ra te d d i/ d t: 20 V, 30 o hm s
tr = 0.5 µs, tp >= 6 µs
b )Re c o m m e nd e d lo a d line for
<= 30% ra te d d i/d t: 20 V, 65 o hm s
tr = 1 µs, tp >= 6 µs
(a )
(b )
(3) (2) (1)
(4)
VG D
IG D
0.01
IRK.26.. Se rie s
Fre q ue nc y Lim ite d b y PG(AV)
10 100
0.1
0.001
0.1
1
1000
Insta nta ne ous Ga te Curre nt (A)
Fig. 12- Gate Characteristics
7
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IRK.26 Series
Bulletin I27130 rev. G 10/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
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8
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