IRKH27/14 [INFINEON]
Silicon Controlled Rectifier, 60A I(T)RMS, 25000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA;
| 型号： | IRKH27/14 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 60A I(T)RMS, 25000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA 局域网 栅 栅极 |
| 文件： | 总8页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27130 rev. C 09/97
IRK.26 SERIES
NEWADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
27 A
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configura-
tions. The semiconductor chips are electrically iso-
lated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.
Major Ratings and Characteristics
Parameters
IT(AV)or IF(AV)
IRK.26
Units
27
60
A
@85°C
IO(RMS) (*)
A
A
A
ITSM @50Hz
IFSM @60Hz
400
420
800
730
8000
2
2
I t @50Hz
A s
2
@60Hz
A s
2
2
I √t
A √s
VRRM range
TSTG
400to1600
-40to125
-40to125
V
o
C
o
TJ
C
(*) As AC switch.
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1
IRK.26 Series
Bulletin I27130 rev. C 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive IRRM
peak off-state voltage, IDRM
Voltage
Type number
Code
gate open circuit
125°C
-
V
V
V
mA
04
06
08
400
500
400
600
700
600
800
900
800
IRK.26
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.26
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
27
27
180o conduction, half sine wave,
TC = 85oC
IF(AV) Max. average forward
current (Diodes)
I
Max. continuous RMS
O(RMS) on-state current.
As AC switch
60
or
I(RMS)
I(RMS)
A
ITSM Max. peak, one cycle
or non-repetitive on-state
IFSM or forward current
400
420
335
350
470
490
800
730
560
510
1100
1000
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ = TJ max.
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
Initial TJ = TJ max.
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ = 25oC,
A2s
t=8.3ms no voltage reapplied
I2√t
Max. I2√t for fusing (1)
8000
A2√s
t=0.1to10ms, no voltage reappl. TJ=TJ max
TJ = TJ max
VT(TO) Max. value of threshold
voltage (2)
0.92
0.95
Low level (3)
High level (4)
Low level (3)
High level (4)
ITM =π x IT(AV)
V
r
Max. value of on-state
slope resistance (2)
12.11
11.82
TJ = TJ max
TJ = 25oC
t
mΩ
VTM Max. peak on-state or
VFM forward voltage
di/dt Max. non-repetitive rate
of rise of turned on
current
1.95
V
IFM =π x IF(AV)
TJ = 25oC, from 0.67 VDRM
ITM =π x IT(AV), I = 500mA,
,
150
200
400
A/µs
mA
g
t < 0.5 µs, t > 6 µs
p
r
IH
Max. holding current
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
TJ = 25oC, anode supply = 6V, resistive load
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.26 Series
Bulletin I27130 rev. C 09/97
Triggering
Parameters
IRK.26
Units
Conditions
PGM Max. peak gate power
10
2.5
2.5
W
A
PG(AV) Max. average gate power
IGM
Max. peak gate current
-VGM Max. peak negative
gate voltage
10
4.0
2.5
1.7
TJ = - 40°C
TJ = 25°C
TJ = 125°C
V
Anode supply = 6V
resistive load
VGT Max. gate voltage
required to trigger
270
150
80
TJ = - 40°C
TJ = 25°C
TJ = 125°C
Anode supply = 6V
resistive load
IGT
Max. gate current
required to trigger
mA
TJ = 125oC,
rated VDRM applied
TJ = 125oC,
rated VDRM applied
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.26
15
Units
mA
V
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 125oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
500
50 Hz, circuit to base, all terminals
shorted
dv/dt Max. critical rate of rise
of off-state voltage (5)
V/µs
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16 S90.
Thermal and Mechanical Specifications
Parameters
IRK.26
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
- 40 to 125
stg
RthJC Max. internal thermal
resistance, junction
to case
0.31
Per module, DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mountingsurfaceflat,smoothandgreased.
0.1
5
Flatness<0.03mm;roughness<0.02mm
T
Mounting torque ± 10%
to heatsink
busbar
Approximate weight
Case style
Amountingcompoundisrecommended
andthetorqueshouldberecheckedaftera
periodof3hourstoallowforthespreadof
thecompound
Nm
3
wt
83 (3)
g (oz)
TO-240AA
JEDEC
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3
IRK.26 Series
Bulletin I27130 rev. C 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRK.26
Units
°C/W
180o
0.23
120o
90o
60o
30o
180o
0.17
120o
90o
60o
30o
0.27
0.34
0.48
0.73
0.28
0.36
0.49
0.73
Outlines Table
IRKT26/.. (*)
IRKH26/.. (*)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
15.5 ± 0.5
(0.61 ± 0.02)
18 REF.
(0.71)
Screws M5 x 0.8
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0. 03)
(0.11 x 0.03)
6.3 ± 0.3
6.3 ± 0.3
(0.25 ± 0.01)
(0.25 ± 0.01)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
IRKL26/.. (*)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
6.3 ± 0.3
(0.25 ± 0.01)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
All dimensions in millimeters (inches)
(*) For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.26 Series
Bulletin I27130 rev. C 09/97
Circuit Configurations Table
IRKT
IRKH
(1)
IRKL
(1)
~
(1)
~
~
+
(2)
+
(2)
+
(2)
-
(3)
-
(3)
-
(3)
K2 G2
(7) (6)
G1
(4) (5)
G1 K1
(4) (5)
K1
K2 G2
(7) (6)
Ordering Information Table
Device Code
IRK.27 types
With no auxiliary cathode
IRK
T
26
/
16 S90
3
4
5
1
2
13.8 (0.53)
1
2
3
4
5
-
-
-
-
-
Moduletype
Circuitconfiguration(SeeCircuitConfigurationtable)
Current code* *
* * Available with no auxiliary cathode.
To specify change:
26 to 27
Voltagecode (See Voltage Ratings table)
e.g. : IRKT27/16 etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
130
120
110
100
90
130
120
110
100
90
IRK.26.. Se rie s
IRK.26.. Se rie s
(DC ) = 0.62 K/ W
R
(DC) = 0.62 K/ W
R
thJC
thJC
Co nd u ction Perio d
C o nd u ctio n Ang le
30°
30°
60°
60°
90°
90°
120°
180°
120°
180°
30
DC
80
80
0
5
10
15
20
25
30
0
10
20
40
50
Ave ra g e O n-sta te C urre n t (A)
Fig. 1 - Current Ratings Characteristics
Ave ra g e On -sta te Curre nt (A)
Fig. 2 - Current Ratings Characteristics
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5
IRK.26 Series
Bulletin I27130 rev. C 09/97
50
70
60
50
40
30
20
10
0
180°
120°
90°
60°
DC
180°
120°
90°
60°
30°
40
30°
RMS Lim it
30
20
10
0
RMS Lim it
C o nd uc tio n An g le
C on d uc tio n Perio d
IRK.26.. Series
Pe r Jun ctio n
IRK.26.. Se rie s
Pe r Junc tio n
T = 125°C
T
= 125°C
J
J
0
5
10
15
20
25
30
0
10
20
30
40
50
Ave ra g e On-sta te Curre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
400
350
300
250
200
150
400
350
300
250
200
150
At Any Ra te d Lo a d Condition And With
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Contro l
Of Conduc tion Ma y Not Be Ma inta ine d .
Ra te d V
App lie d Follo wing Surge .
RRM
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.26.. Se rie s
Pe r Jun c tio n
IRK.26.. Se rie s
Pe r Jun c tio n
0.01
0.1
Pulse Tra in Dura tion (s)
1
1
10
100
Numb e r O f Eq ua l Am p litu d e Ha lf Cyc le C urre nt Pulse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
100
180°
120°
90
1
K
90°
60°
/
80
W
70
60
50
40
30
20
10
0
30°
3
4
K
/
W
W
Co nd uct ion Ang le
K
/
IRK.26.. Se rie s
Pe r Mod ule
T
= 125°C
J
0
10
20
30
40
50
6
0
20
40
60
80
100 120 140
Ma ximum Allow a b le Am b ie nt Te mp e ra ture (°C )
Tota l RMS Outp ut Curre nt (A)
Fig. 7 - On-state Power Loss Characteristics
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6
IRK.26 Series
Bulletin I27130 rev. C 09/97
250
200
150
100
50
R
t
h
S
A
=
0
.
1
K
/
W
0
.
5
-
K
D
/
W
e
180°
(Sine )
180°
l
t
a
R
(Re c t)
1
K
/
W
1
.
5
K
/
W
2 x IRK.26.. Se rie s
Sing le Pha se Brid g e
C on ne c te d
3
K
/
W
W
8
K/
T
= 125°C
J
0
0
10
20
30
40
50
60
20
40
60
80
100 120 140
To ta l Outp ut C urre nt (A)
Ma xim um Allo w a ble Am b ie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
350
300
250
200
150
100
50
R
=
0
.
1
K
/
W
-
D
e
l
t
120°
(Re c t)
a
R
0
.
7
K
/
W
1
1
K
/
W
3 x IRK.26.. Se rie s
Th re e Pha se Brid g e
C o nn e c t e d
.
5
K
/
W
3
K
/
W
T
= 125°C
J
0
0
10 20 30 40 50 60 70 80
20
40
60
80
100 120 140
Ma ximum Allo wa b le Amb ie nt Te m p e ra ture (°C)
To ta l Outp ut C urre nt (A)
Fig. 9 - On-state Power Loss Characteristics
1000
100
10
T = 25°C
J
T = 125°C
J
IRK.26.. Se rie s
Pe r Jun c tio n
1
0
1
2
3
4
5
6
7
Insta n ta ne o us O n-sta te Vo lta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
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7
IRK.26 Series
Bulletin I27130 rev. C 09/97
1
Ste a dy Sta te Va lue :
= 0.62 K/W
R
thJC
(DC Op era tion)
0.1
IRK.26.. Se rie s
0.01
0.001
0.01
0.1
1
10
Squa re Wa ve Pulse Dura tion (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ng ula r g a te pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 m s
(3) PGM = 20 W, tp = 25 m s
(4) PGM = 10 W, tp = 5 m s
a )Re c om me nde d loa d line for
ra te d di/ d t: 20 V, 30 ohms
tr = 0.5 µs, t p >= 6 µs
b )Re c omme nd e d lo a d line for
<= 30% ra te d d i/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a )
(b )
(4) (3) (2) (1)
VG D
IGD
0.01
IRK.26.. Se rie s
Fre q ue n c y Limite d b y PG(AV)
0.1
0.001
0.1
1
10
100
1000
Insta nta ne ous Ga te Curre nt (A)
Fig. 12- Gate Characteristics
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8
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