IRKH500-14PBF [INFINEON]
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| 型号： | IRKH500-14PBF |
| 厂家： | 
Infineon |
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Bulletin I27401 rev. A 09/97
IRK.500.. SERIES
SUPER MAGN-A-pakTM Power Modules
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
500 A
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL E78996 approved
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV)
IRK.500..
500
Units
A
@ TC
82
°C
IT(RMS)
785
82
A
@ TC
°C
KA
KA
ITSMor IFSM @50Hz
17.8
18.7
1591
1452
@60Hz
2
2
I t
@50Hz
@60Hz
KA s
2
KA s
2
2
I √t
15910
KA √s
VDRM/VRRM range
800 to 1600
V
TSTG
TJ
range
range
-40to150
-40to130
°C
°C
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1
IRK.500.. Series
Bulletin I27401 rev. A 09/97
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
Type number
IRK.500..
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = TJ max.
mA
08
12
14
16
800
900
1200
1400
1600
1300
1500
1700
100
On-state Conduction
Parameter
IT(AV)
IRK.500..
Units Conditions
Maximum average on-state current
500
82
A
°C
A
180° conduction, half sine wave
IF(AV)
@ Case temperature
IT(RMS) Maximum RMS on-state current
785
180° conduction, half sine wave @ TC = 82°C
t = 10ms No voltage
ITSM
IFSM
Maximum peak, one-cycle,
non-repetitive surge current
17.8
18.7
KA
t = 8.3ms reapplied
15.0
t = 10ms 100% VRRM
15.7
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
1591
1452
1125
1027
15910
KA2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
0.85
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
0.93
0.36
r
t1
Low level value of on-state slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
High level value of on-state slope resistance
Maximum on-state or forward
voltage drop
0.32
1.50
t2
VTM
VFM
V
Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
IH
IL
Maximum holding current
Typical latching current
500
mA TJ = 25°C, anode supply 12V resistive load
1000
Switching
Parameter
IRK.500..
1000
Units Conditions
di/dt
Maximum rate of rise of turned-on
current
A/µs TJ = TJ max., ITM = 400A, VDRM applied
t
Typical delay time
2.0
µs
µs
Gate current 1A, di /dt = 1A/µs
g
d
V
= 0.67% VDRM , TJ = 25°C
d
t
Typical turn-off time
200
ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
q
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
2
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Blocking
Parameter
IRK.500..
1000
Units Conditions
V/µs TJ = 130°C., linear to VD = 80% VDRM
dv/dt
Maximum critical rate of rise of off-state
voltage
VINS
IRRM
IDRM
RMS isolation voltage
3000
100
V
t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
IRK.500..
Units Conditions
PGM
10
2.0
3.0
20
W
W
A
T = T max., t < 5ms
p
J J
PG(AV) Maximum peak average gate power
+ IGM Maximum peak positive gate current
+ VGM Maximum peak positive gate voltage
TJ = TJ max., f = 50Hz, d% = 50
T = T max., t < 5ms
p
J
J
V
- VGM Maximum peak negative gate voltage
5.0
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
mA TJ = 25°C Vak 12V
TJ = 25°C Vak 12V
VGT
IGD
3.0
10
V
mA TJ = TJ max.
V
VGD
DC gate voltage not to trigger
0.25
Thermal and Mechanical Specifications
Parameter
IRK.500..
- 40 to 130
-40to150
0.065
Units Conditions
°C
TJ
T
Max. junctionoperatingtemperaturerange
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
K/W
case
RthC-hs Max. thermal resistance, case to
heatsink
0.02
A mounting compound is recommended and the
Nm
T
Mountingtorque ± 10%SMAP to heatsink
busbartoSMAP
6-8
12-15
1500
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
wt
Approximate weight
g
Case style
SUPER MAGN-A-pak See outline table
3
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC)
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.009
0.011
0.014
0.021
0.037
0.006
0.011
0.015
0.022
0.038
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
DeviceCode
IRK
T
500
-
16
1
2
3
4
1
2
3
4
-
-
-
-
Module type
Circuit configuration (See Circuit Configurations Table)
Current rating
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
1
~
1
~
1
~
+
2
+
2
+
2
3
-
-
3
3
-
7(K2)
4(K1) 7(K2)
4(K1)
6(G2)
5(G1)
6(G2)
5(G1)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Outline Table
All dimensions in millimeters (inches)
130
130
120
110
100
90
IRK.500.. Se rie s
IRK.500.. Se rie s
R
(DC ) = 0.065 K/ W
R
(DC ) = 0.065 K/W
th JC
th JC
120
110
100
90
Conduc tion Ang le
Co nd u ction Perio d
30°
60°
80
80
30°
60°
90°
120°
90°
120°
180°
70
70
180°
DC
60
60
0
100
200
300
400
500
600
0
100 200 300 400 500 600 700 800 900
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e On -sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
5
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
700
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
600
500
400
300
200
100
0
RMS Limit
RMS Lim it
C o nd uc tio n Perio d
Cond uc tion Angle
IRK.500.. Se rie s
Pe r Junc tio n
IRK.500.. Serie s
Pe r Junc tion
T
= 130°C
T = 130°C
J
J
0
100
200
300
400
500
0
100 200 300 400 500 600 700 800
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
18000
16000
14000
12000
10000
8000
16000
15000
14000
13000
12000
11000
10000
9000
Ma xim um No n Re p e titive Surge Curre nt
Ve rsus Pulse Tra in Dura tion. C ontrol
Of Co nd uc tio n Ma y Not Be Ma inta ine d .
At Any Ra te d Lo a d C ond itio n And With
Ra te d V
Ap p lie d Fo llowing Surg e .
RRM
Initia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p plie d
Ra te d V
Re a p plie d
RRM
IRK.500.. Se rie s
Pe r Junc tion
IRK.500.. Se rie s
Pe r Junc tion
8000
6000
7000
1
10
100
0.01
0.1
1
Numb e r O f Equa l Amp litude Ha lf C yc le Curre nt Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
0
.
1
t
2
h
S
K
0
/
.
A
1
W
6
K
/
W
C o nd uc tio n Ang le
0
.
3
K
/
W
0
.
4
K
/
W
IRK.500.. Se rie s
Pe r Mo dule
T
= 130°C
J
0
0
100 200 300 400 500 600 700 800
20
40
60
80
100
120
Ma ximum Allow a b le Amb ie n t Te m p e ra ture (°C )
To ta l RMS O utp ut C urre n t (A)
Fig. 7 - On-state Power Loss Characteristics
6
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
3000
2500
2000
1500
1000
500
180°
(Sine )
180°
0
3
t
.
0
h
S
2
A
K
/
W
0
.
0
(Re c t)
K
/
W
W
0
.
.
0
0
5
K
/
0
8
K
/
W
0
.
1
2
K
/
W
2 x IRK.500.. Se rie s
Sing le Pha se Brid ge
C onne c te d
0
.
2
K
/
W
T
= 130°C
J
0
0
200
400
600
800
10
00
20
40
60
80
100
120
To ta l Outp ut C urre n t (A)
Ma ximum Allow a b le Am b ie nt Te mp e ra ture (°C)
Fig. 8 - On-state Power Loss Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
R
t
h
120°
(Re c t)
S
A
=
0
.
0
1
K
/
W
-
D
0
.
e
0
3
l
t
K
a
/
W
R
0
.
0
5
K
/
W
0
.
0
8
K
/
3 x IRK.500.. Se rie s
Three Pha se Bridg e
C onne c te d
W
W
0
.
2
K
/
T = 130°C
J
0
0
250
500
750 1000 1250 15
00
20
40
60
80
100
120
To ta lO utp ut C urre n t (A)
Ma ximum Allo wa b le Am b ie nt Te mp e ra ture (°C )
Fig. 9 - On-state Power Loss Characteristics
0.1
10000
1000
100
IRK.500.. Se rie s
Pe r Junction
T = 25°C
0.01
J
T = 130°C
J
Ste a d y Sta te Va lue :
= 0.065 K/W
IRK.500.. Se rie s
Pe r Junc tio n
R
thJC
(DC Op e ra tion )
0.001
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.001
0.01
0.1
1
10
100
Insta nta ne ous On -sta te Volta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
7
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
100
Rec ta ngula r ga te pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a ) Re c o m m e nd e d loa d line fo r
ra te d di/ dt : 20V, 10o hm s; tr<=1 µs
b ) Re c o m m e nd e d loa d line for
<=30% ra te d d i/ dt : 10V, 10ohm s
tr<=1 µs
10
1
(a )
(b )
(1) (2) (3) (4)
VG D
IGD
IRK.500.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)
10 100
0.1
0.001
0.01
0.1
1
Insta nta ne ous G a te Curre nt (A)
Fig. 12 - Gate Characteristics
8
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