IRKJ60/04A [INFINEON]
Rectifier Diode, 1 Phase, 2 Element, 60A, 400V V(RRM), Silicon, ADD-A-PAK-3;
| 型号： | IRKJ60/04A |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 60A, 400V V(RRM), Silicon, ADD-A-PAK-3 局域网 二极管 |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27189 11/04
IRKJ60/04A
ADD-A-pakTM GEN V Power Modules
STANDARD DIODES
Features
Benefits
High Voltage
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL approval pending
3500VRMS isolating voltage
60 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters
IRKJ60
Units
IF(AV)
60
A
@100°C
IF(RMS)
94
A
IFSM @ 50Hz
@ 60Hz
1000
1047
A
A
VRRM
TJ
400
V
- 40 to 150
- 40 to150
oC
oC
TSTG
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1
IRKJ60/04A
Bulletin I27189 11/04
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
@ 150°C
mA
Type number
IRKJ60/04A
peak reverse voltage
repetitive peak rev. voltage
V
400
V
500
04
10
Forward Conduction
Parameter
IRKJ60
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
60
100
A
°C
180° conduction, half sine wave
IF(AV) Max. average forward current
@ Case temperature
55
A
°C
A
180° conduction, half sine wave
105
IF(RMS) Max. RMS forward current
94
DC @ 92°C case temperature
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
1000
1047
950
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
A
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
995
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
5000
4564
4500
A2s
4100
70.7
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO) Threshold voltage
0.642
V
rf
VFM
Forward slope resistance
Max. forward voltage drop
5.7
1.51
mΩ
V
IFM = 190A, T = 25°C, t = 400µs square wave
p
J
Blocking
Parameter
IRKJ60
Units Conditions
IRRM
VINS
Max. peak reverse leakage
current
10
mA
V
TJ = 150oC
50 Hz, circuit to base, all terminals shorted
RMS isolation voltage
3500 (1 sec)
Thermal and Mechanical Specifications
Parameter
IRKJ60
Units Conditions
TJ
Junction temperature range
Storage temperature range
-40 to 150
-40 to 150
°C
°C
T
stg
RthJC Max. thermal resistance,
junction to case
RthCS Typical thermal resistance,
case to heatsink
0.5
0.1
K/W Per junction, DC operation
Mounting surface flat, smooth and greased
K/W
T
Mounting tourque ±10%
to heatsink
busbar
Approximate weight
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
5
4
Nm
wt
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
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2
IRKJ60/04A
Bulletin I27189 11/04
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRKJ60
Units
°C/W
180o
0.11
120o
90o
60o
30o
180o
0.09
120o
90o
60o
30o
0.13
0.16
0.22
0.32
0.14
0.17
0.23
0.32
Ordering Information Table
(1)
-
Device Code
IRK
J
60
/
04
A
1
2
3
4
5
+
(2)
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (2 diodes/common anode)
Current code (60 = 60A)
Voltage rating (04 = 400V)
A = Gen V
+
(3)
Outline Table
Dimensions are in millimeters and [inches]
3
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IRKJ60/04A
Bulletin I27189 11/04
150
140
130
120
110
100
90
150
IRK.56.. Series
R (DC) = 0.5 K/W
thJC
IRK.56.. Series
(DC) = 0.5 K/ W
R
thJC
140
130
120
110
100
90
Conduction Angle
Conduction Period
30°
60°
90°
90°
120°
60°
120°
180°
30°
180°
DC
80
0
10
20
30 40
50 60
70
0
20
40
60
100
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
90
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
180°
120°
90°
DC
180°
120°
90°
60°
30°
60°
30°
RM S Lim it
RM S Lim it
Conduction Angle
Conduction Period
IRK.56.. Series
Per Junction
T = 150°C
J
IRK.56.. Series
Per Junction
T = 150°C
J
0
10 20
30
40
50 60
70
0
20
40
60
80
100
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
1100
1000
900
800
700
600
500
400
300
1200
1100
1000
900
800
700
600
500
400
300
200
At Any Rated Load Condition And No
Vrrm Applied Following Surge.
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150˚C
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
IRKJ60
IRKJ60
1
10
100
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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4
IRKJ60/04A
Bulletin I27189 11/04
120
100
80
60
40
20
0
R
0
.
7
=
K
0
/
.
W
5
K
/
W
-
D
e
l
t
a
R
180°
1
.
DC
5
K
/
(Sine)
W
3
K
/
W
IRK.56.. Series
Per Junc tion
T = 150° C
J
0
20
40
60
80
100
Maximum Allowable Ambient Temperature (°C)
20 40
60
80 100 120 140
Total RMSOutput Current (A)
Fig. 7 - Forward Power Loss Characteristics
450
400
350
300
250
200
150
100
50
R
0
.
180°
(Sine)
180°
2
=
K
0
/
W
.
1
K
/
W
0
.
3
-
K
D
/
(Rect)
W
e
l
t
a
R
2 x IRK.56.. Series
Single Phase Bridge
Connected
T
= 150°C
J
0
0
20 40
Total Output Current (A)
Fig. 8 - Forward Power Loss Characteristics
60 80 100 120 140 20 40 60
80 100 120 140
Maximum Allowable Ambient Temperature (°C)
450
400
350
300
250
200
150
100
50
t
h
S
A
0
.
4
K
120°
/
W
W
0
(Rect)
.
5
K
/
0
.
7
K
/
W
3 x IRK.56.. Series
Three Phase Bridge
Connected
T = 150°C
J
0
0
20 40 60 80 100 120 140 160 20 40
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
60
80 100 120 140
5
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IRKJ60/04A
Bulletin I27189 11/04
1000
100
10
T = 25° C
J
T = 150°C
J
IRK.56.. Series
Per Junc t ion
0.5
1
1.5
2
2.5
3
3.5
InstantaneousForward Voltage (V)
Fig. 10 - Forward Voltage Drop Characteristics
1
Steady State
Value:
RthJC = 0.5 K/W
(DC Operation)
IRKJ60
0.1
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristic
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/04
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6
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