IRKL136-16D25PBF [INFINEON]
Silicon Controlled Rectifier, 300A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element;
| 型号： | IRKL136-16D25PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 300A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element 局域网 栅 栅极 |
| 文件： | 总13页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27101 rev. B 04/98
IRK. SERIES
INT-A-pakä Power Modules
THYRISTOR/ DIODE and
THYRISTOR/THYRISTOR
Features
High voltage
135 A
140 A
160 A
Electrically isolated base plate
3000 V
isolating voltage
RMS
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Description
These series of INT-A-paks modules uses high voltage
power thyristors/ diodes in seven basic configurations.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built. They can be interconnected to
form single phase or three phase bridges or as AC-
switches when modules are connected in anti-parallel.
These modules are intended for general purpose applica-
tions such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
IRK.135.. IRK.141.. IRK.161..
IRK.136.. IRK.142.. IRK.162..
Parameters
Units
IT(AV)
135
85
140
85
160
85
A
°C
A
@ TC
IT(RMS)
300
3200
3360
51.5
47
310
4750
5000
113
103
1130
355
5100
5350
131
119
1310
ITSM @50Hz
A
@60Hz
2
A
2
I t
@50Hz
@60Hz
KA s
2
KA s
2
2
I √t
515
KA √s
VDRM /VRRM
TJ range
upto1600 upto2000 upto1600
- 40 to 130 - 40 to 125
V
°C
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1
IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage VRRM, maximum repetitive VRSM, maximum non-repetitive
IRRM max.
@ 150°C
mA
Code
peak reverse voltage
peak reverse voltage
V
V
IRK.135, IRK.136
IRK.161, IRK.162
04
08
12
14
16
08
12
16
18
20
400
500
50
800
900
1200
1400
1600
800
1300
1500
1700
900
IRK.141, IRK.142
50
1200
1600
1800
2000
1300
1700
1900
2100
Forward Conduction
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Parameter
Units Conditions
IT(AV) Max. average on-state current
135
140
160
A
180° conduction, half sine wave
@ Case temperature
85
85
85
°C
A
IT(RMS) Max. RMS on-state current
300
310
355
as AC switch
ITSM Maximum peak, one-cycle
on-state, non-repetitive
surge current
3200
3360
4750
5000
5100
5350
A
t = 10ms No voltage
t = 8.3ms reapplied
2700
2800
51.5
47
4000
4200
113
103
80
4300
4500
131
119
92
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sine half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
36
t = 10ms 100% VRRM
33
73
84
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
515
0.98
1130
0.75
1310
0.79
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
V
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold
voltage
101
1.62
1.56
1.66
0.86
0.92
0.77
1.32
0.92
0.64
0.49
1.26
(I > π x IT(AV)), @ TJ max.
r
Low level value on-state
slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT ), @ T max.
(AV)
J
t1
r
High level value on-state
slope resistance
(I > π x IT(AV)), @ TJ max.
t2
VFM Maximum forward voltage drop
V
IFM = π x IF(AV), TJ = max., 180°conduction
2
Av. power = VF(TO) x IF(AV) + rf x (IF(RMS)
)
IH
IL
Maximum holding current
Maximum latching current
500
300
mA Anode supply = 12V initial IT = 30A, TJ = 25°C
mA Anode supply = 12V resistive load = 1Ω gate
pulse: 10V, 100µs, TJ = 25°C
2
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
Switching
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Parameter
Units Conditions
td
tr
Typical delay time
Typical rise time
2.0
3.0
1.0
2.0
1.0
2.0
µs
µs
µs
TJ = 25oC Gate Current = 1A dIg/dt= 1A/µs
TJ = 25oC Vd = 0,67% VDRM
tq
Typical turn-off time
50 - 150
ITM = 300 A; -dI/dt = 15 A/µs; TJ = TJ max
Vr = 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω
Blocking
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Parameter
Units Conditions
mA TJ = 150oC
IRRM Maximum peak reverse and
IDRM off-state leakage current
50
VINS RMS isolation voltage
3000
1000
V
50Hz, circuit to base, all terminals shorted,
t = 1s
V/µs TJ = TJ max., exponential to 67% rated VDRM
dv/dt critical rate of rise of off-state
voltage
Triggering
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Parameter
Units Conditions
PGM Max. peak gate power
5
1
2
5
10
2
10
2
W
W
A
tp≤ 5ms,TJ = TJ max.
f=50Hz,TJ = TJ max.
tp≤ 5ms,TJ = TJ max.
PG(AV) Max. average gate power
IGM
Max. peak gate current
3
3
-VGT Max. peak negative
gate voltage
5
5
V
VGT Max. required DC gate
voltage to trigger
4.0
3.0
4.0
3.0
4.0
3.0
V
TJ=-40°C
TJ= 25°C
Anodesupply=12V,resistive
load;Ra=1Ω
2.0
2.0
2.0
TJ = TJmax.
TJ=-40°C
IGT
Max. required DC gate
current to trigger
350
200
100
0.25
350
200
100
0.30
350
200
100
0.30
Anodesupply=12V,resistive
mA TJ= 25°C
TJ = TJmax.
load;Ra=1Ω
VGD Max. gate voltage
that will not trigger
V
@ TJ = TJ max., ratedVDRMapplied
IGD
Max. gate current
that will not trigger
10
10
10
mA
di/dt Max. rate of rise of
turned-on current
300
500
500
A/µs @TJ=TJmax.,ITM=400Arated VDRMapplied
Thermal and Mechanical Specifications
IRK.135. IRK.141. IRK.161.
IRK.136. IRK.142. IRK.162.
Parameter
Units Conditions
°C
TJ
Max. junction operating
temperature range
Max. storage temperature
range
-40 to 130
-40 to 150
Tstg
-40 to 150
°C
RthJC Max. thermal resistance,
junction to case
0.20
0.17
0.17
K/W DC operation, per junction
RthCS Max. thermal resistance,
case to heatsink
0.035
K/W Mounting surface smooth, flat and greased
Per module
T
Mounting
IAP to heatsink
4 to 6
4 to 6
Nm A mounting compound is recommended and the
torque should be rechecked after a period of 3
hoursto allow for the spread of the compound.
torque ± 10% busbar to IAP
Approximate weight
wt
500 (17.8)
g (oz)
Lubricatedthreads.
3
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJ max.
Devices
Units
180o
120o
90o
60o
30o
180o
120o
0.019
0.020
0.020
90o
60o
30o
IRK.135, IRK.136
IRK.141, IRK.142
IRK.161, IRK.162
0.016
0.016
0.015
0.019
0.019
0.019
0.024
0.025
0.024
0.035
0.036
0.036
0.060
0.060
0.060
0.011
0.012
0.012
0.026
0.027
0.027
0.037
0.037
0.037
0.060 K/W
0.060
0.060
INT-A-paks Suitable for Current Source Inverters
Thyristor
Diode
VRRM
IT(AV) / IF(AV) @ TC
140A
VDRM
VRSM
135A
160A
VRRM
1400
VRSM
2000
@ 85°C
@ 85°C
@ 85°C
1500
1500
IRKH135-14D20
IRKH136-14D20
IRKL135-14D20
IRKL136-14D20
IRKH135-16D25
IRKH135-16D25
IRKL136-16D25
IRKL136-16D25
Not Available
IRKH141-14D20
IRKH142-14D20
IRKL141-14D20
IRKL142-14D20
IRKH141-16D25
IRKH141-16D25
IRKL142-16D25
IRKL142-16D25
IRKH141-18D28
IRKL141-18D28
IRKL142-18D28
IRKL142-18D28
IRKH141-20D32
IRKH142-20D32
IRKL141-20D32
IRKL142-20D32
IRKH161-14D20
IRKH162-14D20
IRKL161-14D20
IRKL162-14D20
IRKH161-16D25
IRKH162-16D25
IRKL161-16D25
IRKL162-16D25
Not Available
1400
2000
1600
1600
1700
1700
2500
2500
1800
1800
2000
2000
1900
1900
2100
2100
2800
2800
3200
3200
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Application Notes
Current Source Inverters
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as op-
posed to Fast) Thyristors and Diodes.
3xIRKL...
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation induc-
tances and limited fault currents.
Their simple construction, illustrated by the circuit on
the left, is further enhanced by the use of INT-A-paks
which allow the power circuit of an Inverter to be
realisedwith6capacitorsand9INT-A-paksallmounted
on just one heatsink.
M
3xIRKH...
The optimal design of Current Source Inverters re-
quires the use of Diodes with blocking voltages greater
than those of the thyristors .
This departure from conventional half-bridge modules
is catered for by INT-A-pak range with Thyristors up to
2000V and Diodes up to 3200V.
3xIRKT...
Current Source Inverter using 9 INT-A-paks
4
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. A 09/97
Ordering Information Table
Device Code
IRK
T
16
2
-
16 D25
N
3
5
1
2
4
6
7
1
2
3
4
-
-
-
-
Module type
Circuitconfiguration
Current rating: IT(AV) x 10 rounded
For IRK.13. only:
5 = option with spacers and longer terminal screws
6 = option with standard terminal screws
For IRK.14. and IRK.16. only:
1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
5
6
7
-
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Current Source Inverters types (See Table)
None = Standarddevices
N
= Aluminumnitradesubstrate
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available
on request
-
-
UL identification number for gate and
cathode wire: UL 1385
UL identification number for package:
UL 94V0
For all types
A
B
C
D
E
IRK...5 & ...1 25 (0.98)
----
----
41 (1.61) 47 (1.85)
IRK...6 & ...2 23 (0.91) 30 (1.18) 36 (1.42)
----
----
IRKT...
IRKH...
IRKL...
IRKU...
IRKV...
IRKK...
IRKN...
NOTE: To order the Optional Hardware see Bulletin I27900
5
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
130
130
120
110
100
90
IRK.136.. Se rie s
IRK.136.. Se rie s
(DC) = 0.20 K/ W
R
(DC ) = 0.20 K/ W
R
thJC
th JC
120
110
100
90
Co nd u ctio n Angle
C ond uctio n Pe rio d
30°
60°
90°
120°
90°
80
60°
120°
180°
30°
180°
DC
80
70
0
20
40
60
80 100 120 140
0
50
100
150
200
250
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e On-sta te C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
225
200
175
150
125
100
75
300
250
200
150
100
50
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
C o nd uc tio n Angle
C o nd uc tio n Perio d
50
IRK.136.. Serie s
Pe r Junc tio n
IRK.136.. Se rie s
Pe r Junc tio n
T = 130°C
25
T
= 130°C
J
J
0
0
0
20 40 60 80 100 120 140 160
Ave ra g e O n-sta te Curre nt (A)
0
50
100
150
200
250
Ave ra g e O n-sta te C urre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
3000
2750
2500
2250
2000
1750
1500
1250
3250
3000
2750
2500
2250
2000
1750
At Any Ra te d Lo a d Co nd itio n An d With
Ma xim um No n Re p e titive Surg e C urren t
Ve rsus Pulse Tra in Dura tio n. Co ntro l
Of Co nd uc tion Ma y Not Be Ma inta ine d .
Ra te d V
Ap p lie d Follo wing Surg e.
RRM
Initia l T = 130°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
In itia l T = 130°C
J
No Vo lta g e Re a p p lie d
RRM
e a p p lie d
Ra te d V
IRK.136.. Se rie s
Pe r Junc tion
1500 IRK.136.. Se rie s
Pe r Junc tio n
1250
0.01
1
10
100
0.1
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Pulse Tra in Dura tion (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
6
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
400
350
300
250
200
150
100
50
R
t
180°
120°
90°
60°
30°
h
S
A
=
0
.
0
1
K
C ond uc tio n Ang le
0
/
W
.
3
K
/
W
W
-
D
e
0
.
l
4
t
K
a
/
R
1
K
/
W
IRK.136.. Se rie s
Pe r Mod ule
T
= 130°C
J
0
0
0
0
50
100
150
200
250
300
20
40
60
80
100 120 140
To ta l RMS Outp ut C urre n t (A)
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C )
Fig. 7 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
180°
(Sin e )
180°
R
t
h
S
A
=
0
(Re c t)
.
0
1
K
/
W
-
D
0
.
e
2
5
K
l
/
t
a
W
R
0
.
2
K
/
W
2 x IRK.136.. Se rie s
Single Pha se Brid ge
Co nne c te d
T
= 130°C
J
50
100
150
200
250
3
0
20
40
60
80 100 120 140
To ta l O utp ut C urre nt (A)
Ma xim um Allow a b le Am b ie nt Te mp e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
R
0
.
0
5
K
/
=
W
0
.
0
1
K
/
W
120°
(Re c t)
-
D
e
l
t
a
R
0
.
2
5
K
/
W
3 x IRK.136.. Se rie s
Thre e Pha se Bridg e
Co nne c te d
T = 130°C
J
40
80 120 160 200 240
Tota l O utp ut Curre nt (A)
2
40
60
80
100 120 140
Fig. 9 - On-state Power Loss Characteristics
7
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
1000
900
800
700
600
500
400
300
200
10000
I
= 500 A
TM
IRK.136.. Se rie s
Pe r Junc tio n
300 A
200 A
1000
100
100 A
50 A
T = 25°C
J
IRK.136.. Se rie s
= 130 °C
T = 130°C
J
T
J
10
0.5
1
1.5
Insta n ta ne o us On -sta te Vo lta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
5
0
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll O f O n-sta te C urre nt - d i/d t (A/ µs)
Fig. 11 - Reverse Recovery Charge Characteristics
130
130
IRK.142.. Se rie s
IRK.142.. Se rie s
(DC ) = 0.17 K/ W
R
(DC ) = 0.17 K/ W
R
thJC
thJC
120
110
100
90
120
110
100
90
C o nd uc tio n An g le
C o nd uctio n Pe rio d
30°
60°
30°
60°
90°
90°
80
80
120°
120°
180°
180°
DC
200
70
70
0
20 40 60 80 100 120 140 160
0
50
100
150
250
Ave ra g e On-sta te C urre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 13 - Current Ratings Characteristics
Fig. 12 - Current Ratings Characteristics
250
200
150
100
50
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
C on d uc tio n Perio d
C o nd uc tio n An g le
IRK.142.. Se rie s
Pe r Junc tion
IRK.142.. Se rie s
Pe r Junc tio n
T
= 125°C
T = 125°C
J
J
0
0
0
50
100
150
200
250
0
20
Ave ra g e O n-sta te Curre nt (A)
Fig. 14 - On-state Power Loss Characteristics
40
60
80
100 120 140
Ave ra g e On -sta te C urre n t (A)
Fig. 15 - On-state Power Loss Characteristics
8
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
5000
4500
4000
3500
3000
2500
2000
At Any Ra te d Lo a d Co nd itio n And With
Ma ximu m No n Re p etitive Surg e C urren t
Ve rsus Pulse Tra in Dura tio n. C ontrol
Of C o nd uc tio n Ma y No t Be Ma inta ine d .
Ra te d V
Ap p lied Fo llo wing Su rg e.
RRM
4500
Initia l T = 125°C
J
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
4000
3500
3000
2500
2000
1500
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.142.. Se rie s
Pe r Junc tion
IRK.142.. Se rie s
Pe r Junc tion
1
10
100
0.01
0.1
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le C urre nt Pu lse s (N)
Pulse Tra in Dura tio n (s)
Fig. 16 - Maximum Non-Repetitive Surge Current
Fig. 17 - Maximum Non-Repetitive Surge Current
450
180°
R
400
350
300
250
200
150
100
50
120°
90°
60°
30°
0
=
0
.
2
K
/
.
0
W
1
K
/
C ond uc tio n Ang le
W
-
D
0
.
4
e
K
/
l
t
W
W
a
R
0
.
6
K
/
1
K
/
W
IRK.142.. Se rie s
Per Mod ule
T = 125°C
J
0
0
50
100 150 200 250 300
3
25
50
75
100
125
To ta l RMS Outp ut Curre nt (A)
Fig. 18 - On-state Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
180°
(Sine )
180°
0
.
0
7
K
/
W
(Re c t)
0
.
1
6
K
/
W
2 x IRK.142.. Se rie s
Sing le Pha se Bridg e
C onne c te d
T
= 125°C
J
0
50
100
150
200
250
3
0
25
50
75
100
125
To ta l O utput Curre nt (A)
Ma ximum Allo w a b le Am b ien t Te m p era ture (°C)
Fig. 19 - On-state Power Loss Characteristics
9
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
1600
0
R
0
.
0
.
0
2
1400
1200
1000
800
600
400
200
0
3
K
K
/
/
W
W
=
0
.
0
1
0
K
/
.
0
7
W
K
120°
(Re c t)
/
W
W
-
D
e
0
.
1
K
l
t
a
/
R
0
.
1
4
5
K
/
W
3 x IRK.142.. Se rie s
Thre e Pha se Bridg e
Co nne c te d
0
.
2
K
/
W
T = 125°C
J
0
100
200
300
400
5
0
25
50
75
100
125
Tota l Outp ut C urre nt (A)
Ma xim um Allo wa b le Am bie nt Te m p e ra ture (°C )
Fig. 20 - On-state Power Loss Characteristics
1400
10000
1000
100
I
= 500 A
TM
T = 25°C
J
1200
300 A
200 A
100 A
1000
T = 125°C
J
800
600
50 A
IRK.142.. Se rie s
Pe r Junc tion
400
200
IRK.142.. Se rie s
T = 125 °C
J
10
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll O f On -sta te C urre nt - d i/ d t (A/µs)
Insta nta n e ous O n-sta te Vo lta g e (V)
Fig. 21 - On-state Voltage Drop Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
130
130
IRK.162.. Se rie s
(DC) = 0.17 K/ W
IRK.162.. Se rie s
R
R
(DC) = 0.17 K/ W
th JC
thJC
120
110
100
90
120
110
100
90
Cond uc tion Ang le
C o nd uc tio n Perio d
30°
60°
90°
90°
60°
80
80
120°
180°
120°
30°
180°
DC
70
70
0
20 40 60 80 100 120 140 160 180
Ave ra g e O n-sta te C urre nt (A)
0
50
100
150
200
250
300
Ave ra g e On -sta te Curre n t (A)
Fig. 23 - Current Ratings Characteristics
Fig. 24 - Current Ratings Characteristics
10
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IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
350
DC
250
200
150
100
50
180°
120°
90°
60°
30°
180°
120°
90°
300
250
200
150
100
50
60°
30°
RMS Lim it
RMSLim it
C ond uctio n Pe rio d
C o nd u ctio n Ang le
IRK.162.. Se rie s
Pe r Junc tion
IRK.162.. Se rie s
Pe r Junc tio n
T = 125°C
T = 125°C
J
J
0
0
0
20 40 60 80 100 120 140 160
Ave ra g e O n-sta te C urre nt (A)
0
50
100
150
200
250
300
Ave ra g e O n-sta te C urre nt (A)
Fig. 25 - On-state Power Loss Characteristics
Fig. 26 - On-state Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
5500
5000
4500
4000
3500
3000
2500
2000
At Any Ra ted Lo a d Co nd itio n And With
Ma ximu m No n Re p e titive Surg e C urren t
Versus Pulse Tra in Dura tio n. Co ntro l
Of C o nd uc tion Ma y No t Be Ma inta ine d .
Ra te d V
Ap p lied Fo llo wing Surg e.
RRM
Initia l T = 125°C
J
In itia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IR.162.. Se rie s
Pe r Jun ctio n
IRK.162.. Se rie s
Pe r Junc tio n
1
10
100
0.01
0.1
1
Nu m b e r O f Eq ua l Am p litu d e Ha lf C yc le C u rre n t Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 27 - Maximum Non-Repetitive Surge Current
Fig. 28 - Maximum Non-Repetitive Surge Current
550
500
R
0
.
1
180°
120°
K
450
/
W
=
0
400
350
300
250
200
150
100
50
90°
60°
30°
.
0
0
.
1
2
K
K
/
W
/
C ond uc tio n Ang le
W
-
0
De
.
3
K
/
W
l
t
a
0
.
4
6
K
R
/
W
W
0
.
K
/
1
K
/
W
IRK.162.. Se rie s
Pe r Mo d ule
T = 125°C
J
0
0
50 100 150 200 250 300 350 400
25
50
75
100
125
To ta l RMS O utp ut Curre nt (A)
Ma xim um Allo wa ble Am b ie nt Te m pe ra ture (°C )
Fig. 29 - On-state Power Loss Characteristics
11
www.irf.com
IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
900
800
700
0
.
0
7
K
/
W
600
180°
(Sin e )
180°
(Re c t)
500
400
300
200
100
0
0
.
2
K
/
W
0
.
2
5
K
/
W
2 x IRK.162.. Se rie s
Sing le Pha se Brid ge
C o nne c te d
T
= 125°C
J
0
50 100 150 200 250 300 35
0
25
50
75
100
125
Tota l Outp ut C urre nt (A)
Ma ximum Allowa b le Amb ie nt Te mp e ra ture (°C )
Fig. 30 - On-state Power Loss Characteristics
1500
1250
1000
750
500
250
0
R
=
0
.
0
1
K
/
W
120°
(Re c t)
0
-
.
1
D
K
/
e
W
l
t
a
R
0
.
2
K
/
W
3 x IRK.162.. Se rie s
Thre e Pha se Bridg e
Co nnec te d
0
.
2
5
K
/
W
T = 125°C
J
0
100
200
300
400
5
0
25
50
75
100
125
Tota l Output C urre nt (A)
Ma xim um Allo wa ble Am bie nt Te mp e ra ture (°C)
Fig. 31 - On-state Power Loss Characteristics
1400
10000
1000
100
I
= 500 A
300 A
TM
T = 25°C
J
1200
T = 125°C
J
200 A
1000
100 A
800
600
400
50 A
IRK.162.. Se rie s
T = 125 °C
IRK.162.. Se rie s
Pe r Junc tion
J
10
0.5
200
1
1.5
2
2.5
3
3.5
4
4.5
5
0
10 20 30 40 50 60 70 80 90 100
In sta n ta ne o us O n-sta te Vo lta g e (V)
Fig. 32 - On-state Voltage Drop Characteristics
Ra te O f Fa ll Of O n-sta te C urre n t - d i/d t (A/ µs)
Fig. 33 - Reverse Recovery Charge Characteristics
12
www.irf.com
IRK.135, .136, .141, .142, .161, .162 Series
Bulletin I27101 rev. B 04/98
1
Ste a d y Sta te Va lue
R
R
= 0.20 K/ W
= 0.17 K/ W
thJC
thJC
IRK.136.. Se rie s
(DC Op e ra tio n)
0.1
IRK.142.. Se rie s
IRK.162.. Se rie s
0.01
Pe r Junc tio n
0.001
0.0001
0.001
0.01
0.1
1
10
100
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 34 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ng ula r ga te pulse
(1) PG M = 60W, tp = 0.66m s
(2) PG M = 40W, tp = 1m s
(3) PG M = 20W, tp = 2m s
(4) PG M = 10W, tp = 4m s
a ) Re c o m m e nd e d lo a d line fo r
ra te d di/ dt : 20V, 10ohm s; tr<=1 µs
b) Re c om m e nde d loa d line for
<=30% ra te d d i/ dt : 10V, 10ohm s
tr<=1 µs
(a )
(b )
(1) (2) (3) (4)
VGD
IGD
IRK.136.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)
10 100
0.1
0.001
0.01
0.1
1
Insta nta n e o us G a te C urre n t (A)
Fig. 35 - Gate Characteristics
100
10
1
Re c ta ngula r ga te p ulse
(1) PGM = 60W, tp = 0.66ms
(2) PGM = 40W, tp = 1ms
(3) PGM = 20W, tp = 2ms
(4) PGM = 10W, tp = 4ms
a ) Re c om m e nde d lo a d line for
ra te d di/ d t : 20V, 10ohm s; tr<=1 µs
b) Rec o m m e nd e d loa d line for
<=30% ra te d d i/ dt : 10V, 10ohm s
tr<=1 µs
(a )
(b )
(4)
(1) (2) (3)
VGD
IGD
IRK.142.. / IRK.162.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)
0.1 10 100
0.1
0.001
0.01
1
Insta nta ne o us G a te C urre n t (A)
Fig. 36 - Gate Characteristics
13
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