IRKL56/08S90P [INFINEON]
Silicon Controlled Rectifier, 60000mA I(T), 800V V(RRM);
| 型号： | IRKL56/08S90P |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 60000mA I(T), 800V V(RRM) 栅 栅极 |
| 文件： | 总10页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27213 03/06
IRK.41, .56..PbF SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
45 A
IndustrialStandardPackage
Thickcopperbaseplate
UL E78996 approved
3500VRMS isolatingvoltage
TOTALLYLEAD-FREE
60 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellentthermalperformanceobtainedbytheusageof
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltageapplicationssuchashighvoltageregulatedpower
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters IRK.41
IT(AV)or IF(AV)
IRK.56
Units
45
60
A
A
@ 85°C
IO(RMS) (*)
100
135
ITSM @50Hz
IFSM @60Hz
850
890
1310
1370
A
A
2
2
I t @50Hz
3.61
8.50
KA s
2
@60Hz
3.30
36.1
7.82
85.0
KA s
2
2
I √t
KA √s
V
RRM range
400 to 1600
V
TSTG
- 40 to 125
- 40 to125
oC
oC
TJ
(*) As AC switch.
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1
IRK.41, .56 Series
Bulletin I27213 03/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
Voltage
IDRM
Type number
Code
peak reverse voltage peak reverse voltage
125°C
-
V
400
600
800
V
500
700
900
V
400
600
800
mA
04
06
08
IRK.41/ .56
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.41
IRK.56
Units
Conditions
IT(AV) Max.average on-state
current (Thyristors)
IF(AV) Maximumaverage
45
45
60
60
180o conduction, half sine wave,
TC =85oC
forward current (Diodes)
IO(RMS Max.continuousRMS
)
on-state current.
As AC switch
100
135
or
I(RMS)
I(RMS)
A
ITSM
or
IFSM
Max.peak,onecycle
non-repetitive on-state
or forward current
850
890
715
750
940
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
85.6
0.85
0.88
3.53
3.41
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ =TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
985
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max.I2tforfusing
3.61
3.30
2.56
2.33
4.42
4.03
36.1
0.88
0.91
5.90
5.74
t=8.3ms reapplied
InitialTJ =TJ max.
t=10ms 100%VRRM
KA2s
t=8.3ms reapplied
t=10ms TJ =25oC,
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I2√t
Max.I2√tforfusing (1)
KA2√s
VT(TO) Max.valueofthreshold
voltage (2)
Low level (3)
TJ = TJ max
V
High level (4)
r
Max.valueofon-state
Low level (3)
TJ = TJ max
High level (4)
t
mΩ
slope resistance (2)
Max.peakon-stateor
VTM
VFM
ITM=π xIT(AV)
TJ = 25°C
1.81
1.54
V
forward voltage
IFM=πxIF(AV)
di/dt Max.non-repetitive rate
of rise of turned on
T = 25oC, from 0.67 VDRM
,
J
ITM =π x IT(AV), I = 500mA,
g
150
A/µs
mA
current
t < 0.5 µs, t > 6 µs
r
p
TJ =25oC,anodesupply=6V,
IH
IL
Max. holding current
Max. latchingcurrent
200
400
resistive load, gate open circuit
TJ =25oC, anodesupply=6V,resistiveload
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.41, .56 Series
Bulletin I27213 03/06
Triggering
Parameters
IRK.41
10
IRK.56
10
Units
Conditions
PGM Max.peakgatepower
W
A
PG(AV) Max.averagegatepower
2.5
2.5
IGM
Max.peakgatecurrent
2.5
2.5
-VGM Max.peaknegative
gate voltage
10
4.0
2.5
1.7
TJ =-40°C
TJ =25°C
TJ =125°C
V
VGT Max.gatevoltage
required to trigger
Anodesupply=6V
resistive load
270
150
80
TJ =-40°C
TJ =25°C
TJ =125°C
TJ=125oC,
ratedVDRM applied
TJ=125oC,
ratedVDRM applied
IGT
Max.gatecurrent
required to trigger
Anodesupply=6V
resistive load
mA
VGD Max.gatevoltage
thatwillnottrigger
IGD
0.25
6
V
Max.gatecurrent
thatwillnottrigger
mA
Blocking
Parameters
IRK.41
IRK.56
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
15
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
-40to125
stg
RthJC Max.internalthermal
resistance, junction
to case
RthCS Typicalthermalresistance
case to heatsink
0.23
0.20
Permodule, DCoperation
K/W
Nm
Mounting surface flat, smooth and greased
0.1
T
Mounting torque ± 10%
to heatsink
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
5
3
busbar
wt
Approximateweight
110(4)
gr(oz)
Casestyle
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.11
0.09
120o
0.13
0.11
90o
60o
0.23
0.18
30o
0.34
0.27
180o
0.09
0.07
120o
0.14
0.11
90o
0.18
0.14
60o
0.23
0.19
30o
0.34
0.28
IRK.41
IRK.56
0.17
0.13
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3
IRK.41, .56 Series
Bulletin I27213 03/06
Ordering Information Table
Device Code
IRK.57 types
With no auxiliary cathode
IRK
T
56
/
16 S90
P
1
2
3
5
6
4
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
Voltage code (See Voltage Ratings table)
* * Available with no auxiliary cathode.
To specify change:
41 to 42
56 to 57
dv/dtcode:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
e.g. : IRKT57/16P etc.
6
6
-
P = Lead-Free
OutlineTable
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
(1)
(1)
(1)
~
-
~
~
+
+
+
+
(2)
(3)
(2)
(2)
(2)
-
(3)
+
-
-
(3)
(3)
G1 K1
(4) (5)
G1
K2 G2
(7) (6)
K1
G1 K1
(4) (5)
K2 G2
(7)
(4) (5)
(6)
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.41, .56 Series
Bulletin I27213 03/06
130
120
110
100
90
130
120
110
100
90
IRK.41.. Series
(DC) = 0.46 K/W
IRK.41.. Series
thJC
R
R
(DC) = 0.46 K/W
thJC
Conduction Angle
Conduction Period
30°
60°
30°
60°
90°
90°
120°
120°
40
180°
180°
DC
60
80
80
0
10
20
30
40
50
0
20
80
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
70
60
50
40
30
20
10
0
100
80
60
40
20
0
DC
180°
120°
90°
180°
120°
90°
RM S Lim it
60°
30°
60°
RMS Lim it
30°
Conduction Angle
Conduction Period
IRK.41.. Series
Per Junction
T = 125°C
J
IRK.41.. Series
Per Junction
T = 125°C
J
0
10
20
30
40
50
0
20
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
40
60
80
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
800
700
600
500
400
300
900
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
800
700
600
500
400
300
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
IRK.41.. Series
Per Junc tio n
IRK.41.. Series
Per Junction
1
10
100
0.01
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
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5
IRK.41, .56 Series
Bulletin I27213 03/06
140
120
100
80
180°
120°
90°
R
0
.
7
K
/
W
1
K
=
/
W
60°
0
.
1
30°
K
/
W
-
1
2
.
D
5
K
e
/
W
l
t
a
R
K
60
/
W
Conduction Angle
40
20
0
IRK.41.. Series
Pe r Mod ule
T = 125°C
J
0
20
40
60
80
100 20 40 60
80 100 120 140
To t a l RM S Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
350
300
250
200
150
100
50
0
t
.
2
h
S
K
A
/
W
0
.
3
K
/
W
180°
(Sine)
180°
(Rect)
1
K
/
W
2 x IRK.41.. Series
Single Phase Bridge
Connected
T
= 1 25° C
J
0
0
20
40
60
80
100 20 40
60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
R
=
0
.
1
K/
W
-
D
e
l
t
a
120°
R
(Rect)
3 x IRK.41.. Series
Three Phase Bridge
Connected
T = 125°C
J
0
0
20 40
Total Output Current (A)
60 80 100 120 1040 20 40
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
60 80 100 120 140
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6
IRK.41, .56 Series
Bulletin I27213 03/06
130
120
110
100
90
130
120
110
100
90
IRK.56.. Series
IRK.56.. Series
(DC) = 0.40 K/W
R
(DC) = 0.40 K/W
Conduction Period
R
thJC
thJC
Conduction Angle
30°
60°
90°
90°
80
80
120°
180°
60°
120°
DC
30°
180°
60
Average On-state Current (A)
70
70
0
10 20
30 40
50 60 70
0
20
40
80
100
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
90
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
180°
120°
90°
DC
180°
120°
90°
60°
30°
60°
30°
RM S Li m it
RM S Lim it
Conduction Period
Conduction Angle
IRK.56.. Series
Per Junction
T = 125°C
J
IRK.56.. Series
Per Junction
T = 125°C
J
0
10
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
20
30
40
50
60
0
20
Average On-state Current (A)
Fig. 13 - On-state Power Loss Characteristics
40
60
80
100
1200
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
1100
1000
900
800
700
600
500
Initial T = 125°C
J
1200
1000
800
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
600
IRK.56.. Series
Per Junc tio n
IRK.56.. Series
Per Junction
400
1
10
100
0.01
0.1
Pulse Train Duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 14 - Maximum Non-Repetitive Surge Current
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7
IRK.41, .56 Series
Bulletin I27213 03/06
200
180
160
140
120
100
80
180°
120°
90°
60°
30°
0
.
7
K
/
W
Conduction Angle
60
40
20
0
IRK.56.. Series
Per Mod ule
J
T = 125°C
0
20 40 60
80 100 120 14
0
20 40 60
80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutput Current (A)
Fig. 16 - On-state Power Loss Characteristics
450
400
350
300
250
200
150
100
50
0
.
2
K
/
W
180°
(Sine)
180°
(Rect)
0
.
7
K
/
W
2 x IRK.56.. Series
Single Phase Bridge
Connected
T
J
= 125°C
0
0
20
40
60 80 100 120 140 20 40
60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
t
h
S
A
0
.
2
K
/
W
120°
0
(Rect)
.
3
K
/W
3 x IRK.56.. Series
0
.
7
K
/
W
Three Phase Bridge
Connected
T = 125°C
J
0
20 40 60 80 100 120 140 160 180 20 40 60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-state Power Loss Characteristics
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8
IRK.41, .56 Series
Bulletin I27213 03/06
1000
100
10
1000
100
10
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
IRK.56.. Series
Per Junction
IRK.41.. Series
Per Junction
1
1
0.5
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 20 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics
500
110
100
90
I
= 200 A
IRK.41.. Series
IRK.56.. Series
J
TM
I
= 200 A
100 A
TM
450
400
350
300
250
200
150
100
100 A
50 A
20 A
T = 125 °C
80
50 A
70
10 A
60
20 A
10 A
50
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
40
30
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Recovery Charge Characteristics
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
R
R
= 0.46 K/W
= 0.40 K/W
thJC
thJC
(DC Operation)
IRK.41.. Series
IRK.56.. Series
0.1
Per Junction
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance ZthJC Characteristics
1
10
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9
IRK.41, .56 Series
Bulletin I27213 03/06
100
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 20 V, 65 ohms
tr = 1µs, tp >= 6µs
10
1
(a)
(b)
(4)
(2) (1)
(3)
VGD
IGD
0.01
IRK.41../ .56.. Series Frequency Limited by PG(AV)
0.1 10 100 1000
0.1
0.001
1
InstantaneousGate Current (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/06
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10
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