IRKT106/06 [INFINEON]
Silicon Controlled Rectifier, 235A I(T)RMS, 105000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, TO-240AA;
| 型号： | IRKT106/06 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 235A I(T)RMS, 105000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, TO-240AA 局域网 栅 栅极 |
| 文件： | 总8页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27133 rev. D 09/97
IRK.105 SERIES
NEW ADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
105 A
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configu-
rations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
Major Ratings and Characteristics
Parameters
IT(AV)or IF(AV)
IRK.105
Units
105
235
A
@85°C
IO(RMS) (*)
A
A
A
ITSM @50Hz
IFSM @60Hz
1785
1870
15.91
14.52
159.1
2
2
I t @50Hz
KA s
2
@60Hz
KA s
2
2
I √t
KA √s
VRRM range
400to1600
-40to150
-40to130
V
o
TSTG
C
o
TJ
C
(*) As AC switch.
1
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IRK.105 Series
Bulletin I27133 rev. D 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive IRRM
peak off-state voltage, IDRM
Voltage
Type number
Code
gate open circuit
130°C
-
V
V
V
mA
04
06
08
400
500
400
600
700
600
800
900
800
IRK.105
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
20
On-state Conduction
Parameters
IRK.105
105
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
180o conduction, half sine wave,
TC = 85oC
IF(AV) Max. average forward
current (Diodes)
IO(RMS Max. continuous RMS
) on-state current.
235
or
I(RMS)
I(RMS)
As AC switch
A
ITSM Max. peak, one cycle
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ = TJ max.
or
non-repetitive on-state
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ = 25oC,
IFSM or forward current
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
Initial TJ = TJ max.
t=10ms 100% VRRM
KA2s
t=8.3ms reapplied
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
t=0.1to10ms, no voltage reappl. TJ=TJ max
Low level (3)
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max. value of threshold
voltage (2)
V
TJ = TJ max
0.85
High level (4)
r
Max. value of on-state
slope resistance (2)
2.37
Low level (3)
TJ = TJ max
High level (4)
t
mΩ
2.25
VTM Max. peak on-state or
VFM forward voltage
di/dt Max. non-repetitive rate
of rise of turned on
current
ITM =π x IT(AV)
1.64
V
TJ = 25°C
IFM =π x IF(AV)
TJ = 25oC, from 0.67 VDRM
ITM =π x IT(AV), I = 500mA,
,
150
200
400
A/µs
mA
g
t < 0.5 µs, t > 6 µs
p
r
IH
Max. holding current
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
TJ = 25oC, anode supply = 6V, resistive load
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.105 Series
Bulletin I27133 rev. D 09/97
Triggering
Parameters
IRK.105
Units
Conditions
PGM Max. peak gate power
12
3
W
A
PG(AV) Max. average gate power
IGM
Max. peak gate current
3
-VGM Max. peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
1.7
270
150
80
TJ = - 40°C
TJ = 25°C
V
Anode supply = 6V
resistive load
TJ = 125°C
TJ = - 40°C
TJ = 25°C
IGT
Max. gate current
required to trigger
Anode supply = 6V
resistive load
mA
TJ = 125°C
TJ = 125oC,
rated VDRM applied
TJ = 125oC,
rated VDRM applied
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.105
20
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 130oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 130oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT105/16 S90.
Thermal and Mechanical Specifications
Parameters
IRK.105
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 130
- 40 to 150
stg
RthJC Max. internal thermal
resistance, junction
to case
0.135
Per module, DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mounting surface flat, smooth and greased.
0.1
5
Flatness 0.03 mm; roughness
0.02 mm
T
Mounting torque ± 10%
to heatsink
busbar
Approximate weight
Case style
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Nm
3
wt
83 (3)
g (oz)
TO-240AA
JEDEC
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3
IRK.105 Series
Bulletin I27133 rev. D 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRK.105
Units
°C/W
180o
0.04
120o
90o
60o
30o
180o
0.03
120o
90o
60o
30o
0.05
0.06
0.08
0.12
0.05
0.06
0.08
0.12
Outlines Table
IRKT105/.. (*)
IRKH105/.. (*)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
15.5 ± 0.5
(0.61 ± 0.02)
18 REF.
(0.71)
Screws M5 x 0.8
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(0.11 x 0. 03)
6.3 ± 0.3
6.3 ± 0.3
(0.25 ± 0.01)
(0.25 ± 0.01)
20 ± 0.5
20 ± 0.5
(0.79 ± 0.02)
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
IRKL105/.. (*)
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
6.3 ± 0.3
(0.25 ± 0.01)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
All dimensions in millimeters (inches)
(*) For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.105 Series
Bulletin I27133 rev. D 09/97
Circuit Configurations Table
IRKT
IRKH
(1)
IRKL
(1)
~
(1)
~
~
+
(2)
+
(2)
+
(2)
-
(3)
-
(3)
-
(3)
K2 G2
(7) (6)
G1
(4) (5)
G1 K1
(4) (5)
K1
K2 G2
(7) (6)
Ordering Information Table
Device Code
IRK.106 types
With no auxiliary cathode
IRK
T
105
/
16 S90
13.8 (0.53)
1
2
3
4
5
-
-
-
-
-
Moduletype
Circuitconfiguration(SeeCircuitConfigurationtable)
Current code* *
* * Available with no auxiliary cathode.
To specify change:
105 to 106
Voltagecode (See Voltage Ratings table)
e.g. : IRKT106/16 etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
130
120
110
100
90
130
120
110
100
90
IRK.105.. Se rie s
IRK.105.. Se rie s
R
(DC ) = 0.27 K/W
R
(DC) = 0.27 K/ W
thJC
thJC
Co nd uc tio n Ang le
C o nd u ctio n Pe rio d
30°
30°
60°
60°
90°
90°
80
80
120°
120°
180°
DC
180°
70
70
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e On-sta te C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
IRK.105 Series
Bulletin I27133 rev. D 09/97
160
200
180
160
140
120
100
80
180°
120°
90°
60°
DC
180°
120°
90°
60°
30°
140
120
30°
100
RMS Limit
RMS Limit
80
60
40
20
0
C ond uc tio n Pe rio d
Co nd uc tio n Ang le
60
IRK.105.. Se rie s
Pe r Jun c tio n
IRK.105.. Se rie s
Pe r Junc tio n
40
T
= 130°C
20
J
T
= 130°C
J
0
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Avera g e O n-sta te Curre n t (A)
Ave ra g e On-sta te C urre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1800
1600
1400
1200
1000
800
1600
1500
1400
1300
1200
1100
1000
900
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Co ntrol
Of C ond uc tion Ma y Not Be Ma inta ine d.
At Any Ra te d Lo a d Cond ition And With
Ra te d V
App lie d Following Surg e .
RRM
Initia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.105.. Se rie s
Pe r Jun c tio n
IRK.105.. Se rie s
Pe r Jun c tio n
800
600
700
0.01
0.1
1
1
10
100
Nu mb e r O f Eq ua l Amp litud e Ha lf C ycle Current Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
350
t
h
S
A
300
250
200
150
100
50
180°
120°
90°
60°
30°
0
.
5
K
/
W
W
0
.
7
Conduc tion Ang le
K
/
1
2
K
/
W
W
IRK.105.. Se rie s
Pe r Mod ule
K
/
T
= 130°C
J
0
0
40
80
120
160
200
240
Ma xim um Allow a b le Am b ie nt Te mp e ra ture (°C )
Fig. 7 - On-state Power Loss Characteristics
20
40
60
80
100 120 140
To ta l RMS Output Curre nt (A)
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6
IRK.105 Series
Bulletin I27133 rev. D 09/97
600
500
400
300
200
100
0
R
180°
(Sine )
180°
=
0
.
1
K
/
W
-
(Re c t)
0
D
.
2
e
l
t
K
/
a
W
R
0
.
3
K
/
W
0
1
.
5
K
/
W
2 x IRK.105.. Se rie s
Sin g le Ph a se Brid g e
C o n ne c te d
K
/
W
2
K
/
W
T
= 130°C
J
0
40
80
120
160
20
20
40
60
80
100 120 140
To ta l O utp ut C urre n t (A)
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C)
Fig. 8 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
120°
(Re c t)
0
.
2
K
/
W
W
0
1
3 x IRK.105.. Serie s
Thre e Ph a se Brid g e
Co n ne c te d
.
5
K
/
K
/
W
T
= 130°C
J
0
40
80
120 160 200 240 280
20
40
60
80
100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allo wa b le Am b ie n t Te mp e ra ture (°C)
Fig. 9 - On-state Power Loss Characteristics
1000
100
10
T = 25°C
J
T = 130°C
J
IRK.105.. Se rie s
Per Junc tio n
1
0
0.5
In sta nta ne o us O n-sta te Vo lta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
1
1.5
2
2.5
3
3.5
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7
IRK.105 Series
Bulletin I27133 rev. D 09/97
140
120
100
80
700
I
= 200 A
100 A
TM
IRK.105.. Se rie s
I
= 200 A
100 A
IRK.105.. Se rie s
TM
T = 125 °C
T = 125 °C
J
600
500
400
300
200
100
J
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of O n-sta te C urre nt - d i/ dt (A/µs)
Ra te O f Fa ll Of Fo rwa rd C urre n t - d i/d t (A/ µs)
Fig. 12 - Recovery Current Characteristics
Fig. 11 - Recovery Charge Characteristics
1
Ste a d y Sta te Va lue :
R
= 0.27 K/ W
th JC
(DC Op e ra tion)
0.1
IRK.105.. Se rie s
Pe r Junc tio n
0.01
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ng ula r g a te pulse
a )Re c om me nde d lo a d line for
ra te d d i/ d t: 20 V, 20 ohms
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
tr = 0.5 µs, tp >= 6 µs
b)Re c om me nde d lo a d line for
<= 30% ra te d di/ d t: 15 V, 40 ohm s
tr = 1 µs, tp >= 6 µs
(a )
(b )
(3)
(4)
(2)
(1)
VG D
IG D
0.01
Fre q ue n c y Lim ite d b y PG (AV)
10 100 1000
IRK.105.. Se rie s
0.1
0.001
0.1
1
Insta nta ne ous G a te C urre nt (A)
Fig. 14- Gate Characteristics
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8
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