IRKT106/14A [INFINEON]
Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7;型号: | IRKT106/14A |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7 局域网 栅 栅极 |
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中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I27133 rev. H 10/02
IRK.105 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
ADD-A-pakTM GEN V Power Modules
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
Full compatible TO-240AA
105 A
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
UL E78996 approved
3500VRMS isolating voltage
Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the
excellentthermalperformanceobtainedbytheusageof
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Theelectricalterminalsaresecuredagainstaxialpull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters
IT(AV)or IF(AV)
@ 85°C
IRK.105
Units
105
235
A
IO(RMS) (*)
A
A
A
ITSM @50Hz
IFSM @60Hz
1785
1870
15.91
14.52
159.1
2
2
I t @50Hz
KA s
2
@60Hz
KA s
2
2
I √t
KA √s
VRRM range
TSTG
400 to 1600
- 40 to 150
- 40 to130
V
oC
oC
TJ
(*) As AC switch.
1
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IRK.105 Series
Bulletin I27133 rev. H 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
IDRM
130°C
mA
Voltage
Type number
Code
-
V
V
V
04
06
08
400
600
800
1000
1200
500
700
900
1100
1300
400
600
800
IRK.105
10
12
14
16
1000
1200
20
1400
1600
1500
1700
1400
1600
On-state Conduction
Parameters
IRK.105
105
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
180o conduction, half sine wave,
TC=85oC
IF(AV) Max. average forward
current (Diodes)
IO(RMS Max. continuous RMS
) on-state current.
235
or
I(RMS)
I(RMS)
As AC switch
A
ITSM Max. peak, one cycle
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ =TJ max.
or
non-repetitive on-state
t =8.3ms reapplied
t=10ms 100%VRRM
t =8.3ms reapplied
t =10ms TJ =25oC,
IFSM or forward current
t =8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t =8.3ms reapplied
Initial TJ =TJ max.
t=10ms 100%VRRM
KA2s
t =8.3ms reapplied
t =10ms TJ =25oC,
t =8.3ms no voltage reapplied
t =0.1to10ms,no voltage reappl. TJ=TJ max
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max. value of threshold
voltage (2)
Low level (3)
TJ = TJ max
V
0.85
High level (4)
r
Max. value of on-state
slope resistance (2)
2.37
Low level (3)
TJ = TJ max
t
mΩ
2.25
High level (4)
VTM Max. peak on-state or
VFM forward voltage
ITM=pxIT(AV)
TJ = 25°C
1.64
V
IFM=pxIF(AV)
di/dt Max. non-repetitive rate
TJ = 25oC, from 0.67 VDRM
TM =p x IT(AV), I = 500mA,
,
of rise of turned on
current
150
200
400
A/µs
mA
I
g
t < 0.5 µs, t > 6 µs
p
r
IH
Max. holding current
TJ =25oC,anodesupply=6V,
resistive load, gate open circuit
IL
Max. latching current
TJ=25oC,anode supply=6V,resistive load
2
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x p x IAV < I < p x IAV
(4) I > p x IAV
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2
IRK.105 Series
Bulletin I27133 rev. H 10/02
Triggering
Parameters
IRK.105
Units
Conditions
PGM Max. peak gate power
12
3
W
PG(AV) Max. average gate power
IGM
Max. peak gate current
3
A
-VGM Max.peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
1.7
270
150
80
TJ =-40°C
TJ =25°C
V
Anode supply=6V
resistive load
TJ =125°C
TJ =-40°C
TJ =25°C
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
TJ =125°C
TJ =125oC,
rated VDRM applied
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
TJ =125oC,
rated VDRM applied
mA
Blocking
Parameters
IRK.105
20
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 130oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 130oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.105
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 130
-40to150
stg
RthJC Max. internal thermal
resistance, junction
to case
0.135
Per module,DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mounting surface flat, smooth and greased
0.1
5
T
Mounting torque±10%
to heatsink
busbar
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Nm
3
wt
Approximate weight
Case style
110(4)
gr(oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRK.105
Units
°C/ W
180o
0.04
120o
90o
60o
30o
180o
0.03
120o
90o
60o
30o
0.05
0.06
0.08
0.12
0.05
0.06
0.08
0.12
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3
IRK.105 Series
Bulletin I27133 rev. H 10/02
Ordering Information Table
Device Code
IRK.106 types
With no auxiliary cathode
IRK
T
105
/
16
A
S90
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
* * Available with no auxiliary cathode.
To specify change:
105 to 106
Voltage code (See Voltage Ratings table)
A : Gen V
e.g. : IRKT106/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
~
(1)
~
(1)
~
ꢀ1)
-
+
(2)
+
(2)
+
(2)
+
ꢀ2)
-
(3)
-
(3)
-
(3)
+
ꢀ3)
G1 K1
(4) (5)
G1
(4) (5)
K2 G2
(7) (6)
G1 K1
K2 G2
(7) (6)
K1
ꢀ4) ꢀ5)
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.105 Series
Bulletin I27133 rev. H 10/02
130
120
110
100
90
130
120
110
100
90
IRK.105.. Se rie s
(DC) = 0.27 K/W
IRK.105.. Se rie s
R
R
(DC) = 0.27 K/ W
thJC
thJC
Co nd uc tio n Ang le
Co nd uc tio n Pe rio d
30°
40
30°
60°
60
60°
90°
90°
80
80
120°
180°
120°
DC
180°
70
70
0
20 40 60 80 100 120 140 160 180
Ave ra g e On-sta te C urre nt (A)
0
20
80
100
120
Ave ra g e On-sta te Curre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
140
120
100
80
200
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
Co nd uc tio n Pe rio d
60
C o nd uc tio n Ang le
60
40
IRK.105.. Se rie s
Pe r Junc tion
IRK.105.. Se rie s
Pe r Junc tion
40
20
T
= 130°C
20
J
T
= 130°C
J
0
0
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e On-sta te C urre nt (A)
Ave ra g e O n-sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tio n Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Cond ition And With
Ra te d V
Ap p lie d Following Surg e .
RRM
Initia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.105.. Se rie s
Pe r Junc tio n
IRK.105.. Se rie s
Pe r Junc tio n
800
600
700
0.01
0.1
Pulse Tra in Dura tion (s)
1
1
10
100
Num b e r O f Eq ua l Am p litud e Ha lf Cyc le C urre nt Pulse s (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
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5
IRK.105 Series
Bulletin I27133 rev. H 10/02
350
300
250
200
150
180°
120°
90°
60°
30°
Co nduc tion Ang le
100
50
0
IRK.105.. Se rie s
Pe r Mod ule
T
= 130°C
J
0
40
80
120
160
200
240 20
40
60
80 100 120 140
Tota l RMS Outp ut Curre nt (A)
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C)
Fig. 7 - On-state Power Loss Characteristics
600
180°
(Sine )
180°
500
400
300
200
100
0
(Re c t)
2 x IRK.105.. Se rie s
Sing le Pha se Brid g e
Conne c te d
T
= 130°C
J
0
40
80
120
160
200
20
40
60
80 100 120 140
To ta l Outp ut Curre nt (A)
Ma xim um Allow a b le Am b ie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
R
=
0
.
1
K
/
W
-
D
120°
(Re c t)
e
l
t
a
0
.
2
R
K
/
W
0
.
3
K
/
W
3 x IRK.105.. Se rie s
Thre e Pha se Brid g e
Con ne c te d
1
K
/
W
T
= 130°C
J
0
40
80 120 160 200 240 280
20
40
60
80 100 120 140
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C )
To ta l Outp ut Curre nt (A)
Fig. 9 - On-state Power Loss Characteristics
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6
IRK.105 Series
Bulletin I27133 rev. H 10/02
1000
100
10
T = 25°C
J
T = 130°C
J
IRK.105.. Se rie s
Pe r Junc tio n
1
0
0.5
1
1.5
2
2.5
3
3.5
Insta nta ne o us On-sta te Volta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
140
700
600
500
400
300
200
100
I
= 200 A
100 A
IRK.105.. Se rie s
T = 125 °C
TM
I
= 200 A
100 A
IRK.105.. Se rie s
TM
120
100
80
J
T = 125 °C
J
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of On-sta te Curre nt - d i/ dt (A/ µs)
Ra te Of Fa ll Of Fo rwa rd Curre nt - d i/ d t (A/ µs)
Fig. 12 - Recovery Current Characteristics
Fig. 11 - Recovery Charge Characteristics
1
Ste a d y Sta te Va lue :
R
= 0.27 K/ W
thJC
(DC Op e ra tion)
0.1
IRK.105.. Se rie s
Pe r Junc tion
0.01
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
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7
IRK.105 Series
Bulletin I27133 rev. H 10/02
100
Re c ta ng ula r g a te p ulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a )Re c om m e nd e d lo a d line fo r
ra te d d i/d t: 20 V, 20 o hm s
tr = 0.5 µs, tp >= 6 µs
b )Re c om m e nd e d lo a d line fo r
<= 30% ra te d d i/ d t: 15 V, 40 o hm s
tr = 1 µs, tp >= 6 µs
10
1
(a )
(b )
(3)
(4)
(2)
(1)
VGD
IGD
0.01
IRK.105.. Se rie s
Fre q ue nc y Lim ite d b y PG(AV)
10 100 1000
0.1
0.001
0.1
1
Insta nta ne o us Ga te Curre nt (A)
Fig. 14- Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
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8
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