IRKT250-06N [INFINEON]

Silicon Controlled Rectifier, 555 A, 600 V, SCR, POWER, MAGN-A-PAK-7;
IRKT250-06N
型号: IRKT250-06N
厂家: Infineon    Infineon
描述:

Silicon Controlled Rectifier, 555 A, 600 V, SCR, POWER, MAGN-A-PAK-7

局域网 栅 栅极
文件: 总14页 (文件大小:484K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRKT250-06PBF

Silicon Controlled Rectifier, 555A I(T)RMS, 600V V(DRM), 600V V(RRM), 2 Element, POWER, MAGN-A-PAK-7
INFINEON

IRKT250-08

THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|250A I(T)
ETC

IRKT250-08D20

SCR / SCR and SCR / DIODE
INFINEON

IRKT250-08D20

Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MAGN-A-PAK-5
VISHAY

IRKT250-08D20N

THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|250A I(T)
ETC

IRKT250-08N

Silicon Controlled Rectifier, 555 A, 800 V, SCR, POWER, MAGN-A-PAK-7
INFINEON

IRKT250-08PBF

Silicon Controlled Rectifier, 555A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, POWER, MAGN-A-PAK-7
VISHAY

IRKT250-10

THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|250A I(T)
ETC

IRKT250-10FN

Silicon Controlled Rectifier, 392.5A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element
INFINEON

IRKT250-10FNN

Silicon Controlled Rectifier, 392.5A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element
INFINEON

IRKT250-10FPN

Silicon Controlled Rectifier, 392.5A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element
INFINEON

IRKT250-10HP

Silicon Controlled Rectifier, 392.5A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element
INFINEON