IRKT250-16CM [INFINEON]
Silicon Controlled Rectifier, 392.5A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element;
| 型号： | IRKT250-16CM |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 392.5A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element 栅极 触发装置 可控硅整流器 二极管 局域网 |
| 文件： | 总6页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27102 rev. C 05/02
IRK. SERIES
SCR / SCR and SCR / DIODE
MAGN-A-pak Power Modules
Features
High voltage
Electrically isolated base plate
170A
230A
250A
3000 V
isolating voltage
RMS
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing com-
mon heatsinks and compact assemblies to be built. They
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose appli-
cations such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
IRK.170.. IRK.230.. IRK.250.. Units
I
I
I
@ 85°C
170
377
230
510
250
555
A
A
A
A
T(AV)
T(RMS)
TSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5100
5350
131
7500
7850
280
8500
8900
361
2
2
I t
KA s
2
119
256
330
KA s
2
2
I √t
1310
2800
3610
KA √s
V
/ V
Up to1600 Up to 2000 Up to1600
-40 to 130
V
oC
DRM
RRM
T
range
J
1
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
VRRMVDRM , maximum
VRSM , maximum non-repetitive
peak reverse voltage
IRRM IDRM max
@ 130°C
repetitive peak reverse and
off-state blocking voltage
V
V
m A
50
04
08
12
14
16
400
500
IRK.170-
IRK.250-
800
900
1200
1400
1600
1300
1500
1700
IRK.230-
08
12
16
18
20
800
900
50
1200
1600
1800
2000
1300
1700
1900
2100
On-state Conduction
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
IT(AV) Maximumaverageon-statecurrent
@Casetemperature
170
85
377
230
85
510
250
85
555
A
oC
A
180o conduction, halfsinewave
I
T(RMS) MaximumRMSon-statecurrent
asACswitch
ITSM Maximumpeak, one-cycleon-state, 5100
7500
7850
6300
8500
8900
7150
A
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100%VRRM
non-repetitive surge current
5350
4300
4500
6600
7500
t=8.3ms reapplied
Sinusoidal half wave,
KA2s t=10ms No voltage initialTJ =TJ max
t=8.3ms reapplied
I2t
MaximumI2tforfusing
131
119
92.5
280
256
198
361
330
255
t=10ms 100%VRRM
84.4
1310
0.89
1.12
181
2800
1.03
1.07
233
t=8.3ms reapplied
I2√t
MaximumI2√tforfusing
3610 KA2√s t=0.1to10ms, novoltagereapplied
V
T(TO)1Lowlevelvalueofthresholdvoltage
0.97
1.00
V
(16.7%xπ xIT(AV) <I<π xIT(AV)),TJ =TJ max.
(I>π xIT(AV)),TJ =TJ max.
VT(TO)2Highlevelvalueofthresholdvoltage
rt1
rt2
Low level on-state slope resistance
High level on-state slope resistance
1.34
0.96
1.60
0.77
0.73
1.59
0.60
0.57
1.44
mΩ (16.7%xπ xIT(AV) <I<π xIT(AV)),TJ =TJ max.
(I>π xIT(AV)),TJ =TJ max.
VTM Maximumon-statevoltagedrop
V
ITM =π xIT(AV),TJ =TJ max.,180o conduction
2
Av.power=VT(TO) x IT(AV) +rfx(IT(RMS)
)
IH
IL
Maximumholdingcurrent
Maximumlatchingcurrent
500
500
500
mA Anodesupply=12V, initialIT=30A, TJ=25oC
1000
1000
1000
Anode supply=12V, resistive load=1Ω
gatepulse:10V,100µs, TJ =25°C
Switching
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
td
tr
Typical delay time
Typical rise time
1.0
2.0
µs TJ = 25oC, Gate Current=1A dIg/dt=1A/µs
Vd = 0,67% VDRM
ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
tq
Typical turn-off time
50 - 150
µs
2
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Blocking
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
IRRM Max.peakreverseandoff-state
IDRM leakage current
50
mA TJ=TJ max.
VINS RMSisolationvoltage
dv/dt Criticalrateofriseofoff-statevoltage
3000
1000
V
50Hz,circuittobase,alltermin.shorted,25°C,1s
V/µs TJ =TJ max,exponentialto67%ratedVDRM
Triggering
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
I PGM Maximum peak gate power
10.0
W
tp ≤ 5ms,
TJ = TJ max.
PG(AV) Maximum average gate power
+IGM Maximum peak gate current
-VGT Max. peak negative gate voltage
2.0
3.0
5.0
W
A
f = 50Hz,
tp ≤ 5ms,
tp ≤ 5ms,
TJ = TJ max.
TJ = TJ max.
TJ = TJ max.
V
VGT Maximum required DC gate
voltage to trigger
4.0
3.0
2.0
350
200
100
V
V
V
TJ = - 40oC Anode supply = 12V, resistive
TJ = 25oC
load ; Ra = 1Ω
TJ = TJ max.
IGT
Maximum required DC gate
current to trigger
mA TJ = - 40oC Anode supply = 12V, resistive
mA TJ = 25oC
mA TJ = TJ max.
load ; Ra = 1Ω
VGD Maximum gate voltage
that will not trigger
0.25
10.0
V
@ TJ= TJ max., rated VDRM applied
IGD
Maximum gate current
that will not trigger
Max rate of rise of
turned-on current
mA @ TJ= TJ max., rated VDRM applied
di/
dt
500
A/µs @ TJ= TJ max., ITM = 400 A rated VDRM applied
Thermal and Mechanical Specifications
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
TJ
T
Junction operating temperature
Storage temperature range
-40to130
-40to150
oC
oC
stg
RthJC Maximum thermal resistance
junction to case
0.17
0.02
0.125
0.02
0.125 K/W Per junction, DC operation
Mountingsurfaceflat, smoothandgreased
RthC-S Thermal resistance, case to heatsink
0.02 K/W
(per module)
T
Mounting tourque ±10%
MAPtoheatsink
BusbartoMAP
A mounting compound is recommended and the
Nm tourqueshouldberecheckedafteraperiodof
Nm about 3hourstoallowforthespreadofthe
4to6
4to6
compound
wt
Approximateweight
Casestyle
500
17.8
MAGN-A-pak
g
oz
3
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJ max.
Devices
Units
180o
120o
90o
60o
30o
180o
0.007
0.007
0.007
120o
90o
60o
30o
IRK.170-
IRK.230-
IRK.250-
0.009
0.009
0.009
0.010
0.010
0.010
0.010
0.010
0.014
0.020
0.020
0.020
0.032
0.032
0.032
0.011
0.011
0.011
0.015
0.015
0.015
0.020
0.020
0.020
0.033 K/W
0.033
0.033
MAGN-A-paks Suitable for Current Source Inverters
Thyristor
Diode
VRRM
IT(AV) / IF(AV) @ TC
230A
VDRM
VRSM
170A
250A
VRRM
1400
1400
1600
1600
1800
1800
2000
2000
VRSM
2000
2000
2500
2500
2800
2800
3200
3200
@ 85°C
@ 85°C
@ 85°C
1500
1500
1700
1700
1900
1900
2100
2100
IRKH170-14D20
IRKL170-14D20
IRKH170-16D25
IRKL170-16D25
Not Available
IRKH230-14D20
IRKL230-14D20
IRKH230-16D25
IRKL230-16D25
IRKH230-18D28
IRKL230-18D28
IRKH230-20D32
IRKL230-20D32
IRKH250-14D20
IRKL250-14D20
IRKH250-16D25
IRKL250-16D25
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
Not Available
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Application Notes
Current Source Inverters
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as op-
posed to Fast) Thyristors and Diodes.
3x IRKL...
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation induc-
tances and limited fault currents.
Their simple construction, illustrated by the circuit on
the left, is further enhanced by the use of MAGN-A-
paks which allow the power circuit of an Inverter to be
realised with 6 capacitors and 9 MAGN-A-paks all
mounted on just one heatsink.
M
3 x IRKH...
The optimal design of Current Source Inverters re-
quires the use of Diodes with blocking voltages greater
than those of the thyristors .
This departure from conventional half-bridge modules
is catered for by MAGN-A-pak range with Thyristors up
to 2000V and Diodes up to 3200V.
3 x IRKT...
Current Source Inverter using 9 MAGN-A-paks
4
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Ordering Information Table
Device Code
IRK
T
250
-
14 D20
1
2
3
4
5
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Outline Table)
Current rating
Voltage code: Code x 100 = V
Current Source Inverters Types
(See Voltage Ratings Table)
RRM
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available
on request
-
-
UL identification number for gate
and cathode wire: UL 1385
UL identification number for package:
UL 94V0
IRKH...
IRKL...
IRKV...
IRKT...
IRKU...
IRKK...
IRKN...
NOTE: To order the Optional Hardware see Bulletin I27900
5
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/02
6
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