IRKT26/10S90P [INFINEON]
Silicon Controlled Rectifier, 27000mA I(T), 1000V V(RRM);
| 型号： | IRKT26/10S90P |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 27000mA I(T), 1000V V(RRM) 栅 栅极 |
| 文件： | 总8页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27214 03/06
IRK.26..PbF SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
ADD-A-pakTM GEN V Power Modules
Features
Benefits
High Voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
IndustrialStandardPackage
Thickcopperbaseplate
UL E78996 approved
3500VRMS isolatingvoltage
TOTALLY LEAD-FREE
27 A
Heatsink grounded
Mechanical Description
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other IR modules.
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Electrical Description
These modules are intended for general purpose
high voltage applications such as high voltage regu-
lated power supplies, lighting circuits, temperature
and motor speed control circuits, UPS and battery
charger.
TheGenerationVofAAPmoduleismanufacturedwithout
hard mold, eliminating in this way any possible direct
stress on the leads.
Major Ratings and Characteristics
Parameters
IT(AV)or IF(AV)
IRK.26
Units
27
60
A
@85°C
IO(RMS) (*)
A
A
A
ITSM @50Hz
IFSM @60Hz
400
420
2
2
I t @50Hz
800
A s
2
@60Hz
730
A s
2
2
I √t
8000
A √s
VRRM range
400to1600
- 40 to 125
-40to125
V
TSTG
oC
oC
TJ
(*) As AC switch.
www.irf.com
1
IRK.26 Series
Bulletin I27214 03/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
Voltage
IDRM
Type number
Code
peak reverse voltage peak reverse voltage
125°C
-
V
400
600
800
V
500
700
900
V
400
600
800
mA
04
06
08
IRK.26
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.26
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
IF(AV) Max. average forward
current (Diodes)
27
27
180o conduction, half sine wave,
TC=85oC
IO(RMS Max. continuous RMS
) on-state current.
60
or
I(RMS)
I(RMS)
As AC switch
A
ITSM Max. peak, one cycle
400
420
335
350
470
490
800
730
560
510
1100
1000
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ =TJ max.
or
non-repetitive on-state
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
IFSM or forward current
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
Initial TJ =TJ max.
t=10ms 100%VRRM
A2s
t=8.3ms reapplied
t=10ms TJ =25oC,
t=8.3ms no voltage reapplied
I2√t
Max. I2√t for fusing (1)
8000
A2√s
t=0.1to10ms,no voltage reappl. TJ=TJ max
TJ = TJ max
VT(TO) Max. value of threshold
voltage (2)
0.92
0.95
12.11
11.82
Low level (3)
High level (4)
Low level (3)
High level (4)
ITM=π xIT(AV)
V
r
Max. value of on-state
TJ = TJ max
TJ =25oC
t
mΩ
slope resistance (2)
VTM Max. peak on-state or
VFM forward voltage
1.95
V
IFM=πxIF(AV)
di/dt Max. non-repetitive rate
of rise of turned on
current
TJ = 25oC, from 0.67 VDRM
,
150
200
400
A/µs
mA
ITM =π x IT(AV), I = 500mA,
g
t < 0.5 µs, t > 6 µs
p
r
IH
Max. holding current
TJ =25oC,anodesupply=6V,
resistive load, gate open circuit
TJ =25oC,anode supply=6V,resistive load
IL
Max. latching current
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.26 Series
Bulletin I27214 03/06
Triggering
Parameters
IRK.26
Units
Conditions
PGM Max. peak gate power
10
2.5
2.5
W
A
PG(AV) Max. average gate power
IGM
Max. peak gate current
-VGM Max.peak negative
gate voltage
10
4.0
2.5
1.7
TJ =-40°C
TJ =25°C
TJ =125°C
V
VGT Max. gate voltage
required to trigger
Anode supply=6V
resistive load
270
150
80
TJ =-40°C
TJ =25°C
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
TJ =125°C
TJ=125oC,
VGD Max. gate voltage
that will not trigger
IGD
0.25
6
V
rated VDRM applied
TJ=125oC,
rated VDRM applied
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.26
15
Units
mA
V
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 125oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
500
50 Hz, circuit to base, all terminals
shorted
TJ = 125oC, linear to 0.67 VDRM
,
dv/dt Max. critical rate of rise
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.26
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
-40to125
stg
RthJC Max. internal thermal
resistance, junction
to case
RthCS Typical thermal resistance
case to heatsink
0.31
Per module,DC operation
K/W
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mounting torque ± 10%
to heatsink
busbar
Nm
3
wt
Approximate weight
110(4)
gr(oz)
Case style
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
IRK.26
Units
°C/W
180o
0.23
120o
0.27
90o
60o
30o
0.73
180o
0.17
120o
0.28
90o
60o
30o
0.73
0.34
0.48
0.36
0.49
3
www.irf.com
IRK.26 Series
Bulletin I27214 03/06
Ordering Information Table
Device Code
IRK.27 types
IRK
T
26
/
16 S90
P
With no auxiliary cathode
1
5
6
2
3
4
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
Voltage code (See Voltage Ratings table)
* * Available with no auxiliary cathode.
To specify change:
26 to 27
dv/dtcode:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
e.g. : IRKT27/16P etc.
6
-
P = Lead-Free
OutlineTable
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
(1)
(1)
(1)
~
-
~
~
+
+
+
+
(2)
(2)
(3)
(2)
(2)
-
-
+
-
(3)
(3)
(3)
G1
K2 G2
(7) (6)
G1 K1
(4) (5)
K1
G1 K1
(4) (5)
K2 G2
(7)
(4) (5)
(6)
NOTE: To order the Optional Hardware see Bulletin I27900
www.irf.com
4
IRK.26 Series
Bulletin I27214 03/06
130
120
110
100
90
130
120
110
100
90
IRK.26.. Series
thJC
IRK.26.. Series
(DC) = 0.62 K/W
R
(DC) = 0.62 K/W
R
thJC
Conduction Period
Conduction Angle
30°
30°
60°
60°
90°
90°
120°
20
180°
25
120°
180°
30
DC
80
80
0
5
10
15
30
0
10
20
40
50
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
50
40
30
20
10
0
70
60
50
40
30
20
10
0
180°
120°
90°
DC
180°
120°
90°
60°
30°
60°
30°
RMS Lim it
RMS Lim it
Conduction Angle
Conduction Period
IRK.26.. Series
Per Junction
IRK.26.. Series
Per Junc t io n
T = 125°C
J
T = 125°C
J
0
5
10
15
20
25
30
0
10
20
30
40
50
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
400
350
300
250
200
150
400
350
300
250
200
150
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
IRK.26.. Series
Per Junction
IRK.26.. Series
Per Junction
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
5
www.irf.com
IRK.26 Series
Bulletin I27214 03/06
100
90
80
70
60
50
40
180°
120°
90°
t
0
h
.
0
5
S
.
A
7
K
K
/
1
W
/
W
K
/
W
60°
30°
Conduction Angle
4
K
/
30
20
10
0
W
IRK.26.. Series
Per Module
T = 125°C
J
0
10
20
30
40
50
6
0
0
20
40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutput Current (A)
Fig. 7 - On-state Power Loss Characteristics
250
200
150
100
50
0
.
3
K
/
W
180°
(Sine)
180°
0
.
7
K
/
W
(Rect)
2 x IRK.26.. Series
Single Phase Bridge
Connected
8
K
/
W
T
= 125°C
J
0
0
10
20
30
40
50
60
20
40 60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
350
300
250
200
150
100
50
R
t
h
0
S
.
A
2
K
=
/
W
0
0
.
1
.
3
K
K
/
/
W
W
-
D
e
l
t
120°
a
0
.
5
R
K
(Rect)
/
W
0
.
7
K
/
W
3 x IRK.26.. Series
Three Phase Bridge
Connected
T = 125°C
J
0
0
10 20 30 40 50 60 70 800
20 40
60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
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6
IRK.26 Series
Bulletin I27214 03/06
1000
100
10
T = 2 5°C
J
T = 125°C
J
IRK.26.. Series
Per Junc tio n
1
0
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
1
Steady State Value:
= 0.62 K/W
R
thJC
(DC Operation)
0.1
IRK.26.. Series
1
0.01
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100W, tp = 500 µs
a)Recommended load line for
rated di/dt: 20V, 30ohms
tr = 0.5 µs, tp >= 6 µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 25 ms
(4) PGM = 10W, tp = 5ms
b)Recommended load line for
<= 30%rated d i/ dt: 20 V, 65 ohms
tr = 1µs, tp >= 6µs
(a)
(b)
(4) (3) (2) (1)
VGD
IGD
0.01
IRK.26.. Series
Frequency Limited by PG(AV)
0.1
0.001
0.1
1
10
100
1000
InstantaneousGate Current (A)
Fig. 12- Gate Characteristics
7
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IRK.26 Series
Bulletin I27214 03/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/06
www.irf.com
8
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