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IRKT56-10AS90 [INFINEON]

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules; 晶闸管/二极管和晶闸管/晶闸管ADD -A - pakTM GEN V电源模块
IRKT56-10AS90
型号： IRKT56-10AS90
厂家： Infineon    Infineon
描述：

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules
晶闸管/二极管和晶闸管/晶闸管ADD -A - pakTM GEN V电源模块

电源电路 二极管
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Bulletin I27131 rev. G 10/02  
IRK.41, .56 SERIES  
THYRISTOR/ DIODE and  
THYRISTOR/ THYRISTOR  
ADD-A-pakTM GEN V Power Modules  
Features  
Benefits  
High Voltage  
Up to 1600V  
45 A  
60 A  
Industrial Standard Package  
Thick Al metal die and double stick bonding  
Thick copper baseplate  
Full compatible TO-240AA  
High Surge capability  
Easy Mounting on heatsink  
UL E78996 approved  
Al203 DBC insulator  
Heatsink grounded  
3500VRMS isolating voltage  
Mechanical Description  
The Generation V of Add-A-pak module combine the  
excellentthermalperformanceobtainedbytheusageof  
Direct Bonded Copper substrate with superior  
mechanical ruggedness, thanks to the insertion of a  
solidCopperbaseplateatthebottomsideofthedevice.  
The Cu baseplate allow an easier mounting on the  
majority of heatsink with increased tolerance of surface  
roughness and improve thermal spread.  
The electrical terminals are secured against axial pull-out:  
they are fixed to the module housing via a click-stop  
feature already tested and proved as reliable on other IR  
modules.  
Electrical Description  
These modules are intended for general purpose high  
voltageapplicationssuchashighvoltageregulatedpower  
supplies, lighting circuits, temperature and motor speed  
control circuits, UPS and battery charger.  
The Generation V of AAP module is manufactured  
without hard mold, eliminating in this way any possible  
direct stress on the leads.  
Major Ratings and Characteristics  
Parameters IRK.41  
IRK.56  
Units  
IT(AV)or IF(AV)  
45  
60  
A
A
@ 85°C  
IO(RMS) (*)  
100  
135  
ITSM @50Hz  
IFSM @60Hz  
850  
890  
1310  
1370  
A
A
2
2
I t @50Hz  
3.61  
8.50  
KA s  
2
@60Hz  
3.30  
36.1  
7.82  
85.0  
KA s  
2
2
I √t  
KA √s  
V
RRM range  
400 to 1600  
V
TSTG  
- 40 to 125  
- 40 to125  
oC  
oC  
TJ  
(*) As AC switch.  
www.irf.com  
1
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
VRRM , maximum  
repetitive  
peak reverse voltage peak reverse voltage  
VRSM , maximum  
non-repetitive  
VDRM , max. repetitive  
peak off-state voltage,  
gate open circuit  
IRRM  
IDRM  
125°C  
Voltage  
Type number  
Code  
-
V
V
V
mA  
04  
06  
08  
400  
500  
400  
600  
700  
600  
800  
900  
800  
IRK.41/ .56  
10  
12  
14  
16  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
1000  
1200  
1400  
1600  
15  
On-state Conduction  
Parameters  
IRK.41  
IRK.56  
Units  
Conditions  
IT(AV) Max.average on-state  
current (Thyristors)  
45  
45  
60  
60  
180o conduction, half sine wave,  
TC=85oC  
IF(AV) Maximumaverage  
forward current (Diodes)  
IO(RMS Max.continuousRMS  
)
on-state current.  
As AC switch  
100  
135  
or  
I(RMS)  
I(RMS)  
A
ITSM  
or  
Max.peak,onecycle  
non-repetitive on-state  
or forward current  
850  
890  
1310  
1370  
1100  
1150  
1450  
1520  
8.56  
7.82  
6.05  
5.53  
10.05  
9.60  
85.6  
0.85  
0.88  
3.53  
3.41  
t=10ms No voltage  
Sinusoidal  
half wave,  
InitialTJ =TJ max.  
t=8.3ms reapplied  
t=10ms 100%VRRM  
t=8.3ms reapplied  
t=10ms TJ =25oC,  
IFSM  
715  
750  
940  
985  
t=8.3ms no voltage reapplied  
t=10ms No voltage  
I2t  
Max.I2tforfusing  
3.61  
3.30  
2.56  
2.33  
4.42  
4.03  
36.1  
0.88  
0.91  
5.90  
5.74  
t=8.3ms reapplied  
InitialTJ =TJmax.  
t=10ms 100%VRRM  
KA2s  
t=8.3ms reapplied  
t=10ms TJ =25oC,  
t=8.3ms no voltage reapplied  
t=0.1 to 10ms, no voltage reapplied  
I2√t  
Max.I2√tforfusing (1)  
KA2√s  
VT(TO) Max.valueofthreshold  
voltage (2)  
Low level (3)  
TJ = TJ max  
High level (4)  
V
r
Max.valueofon-state  
Low level (3)  
TJ = TJ max  
High level (4)  
t
mΩ  
slope resistance (2)  
Max.peakon-stateor  
VTM  
VFM  
ITM=π xIT(AV)  
TJ = 25°C  
1.81  
1.54  
V
forward voltage  
IFM=π xIF(AV)  
di/dt Max.non-repetitive rate  
of rise of turned on  
TJ = 25oC, from 0.67 VDRM  
TM =π x IT(AV), I = 500mA,  
,
I
g
150  
A/µs  
mA  
current  
t < 0.5 µs, t > 6 µs  
r p  
TJ =25oC,anodesupply=6V,  
IH  
IL  
Max. holding current  
Max. latchingcurrent  
200  
400  
resistive load, gate open circuit  
TJ =25oC, anodesupply=6V,resistiveload  
2
(1) I2t for time tx = I2√t x √tx  
(4) I > π x IAV  
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)  
)
(3) 16.7% x π x IAV < I < π x IAV  
www.irf.com  
2
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
Triggering  
Parameters  
IRK.41  
10  
IRK.56  
10  
Units  
Conditions  
PGM Max.peakgatepower  
W
A
PG(AV) Max.averagegatepower  
2.5  
2.5  
IGM  
Max.peakgatecurrent  
2.5  
2.5  
-VGM Max.peaknegative  
gate voltage  
10  
4.0  
2.5  
1.7  
TJ =-40°C  
TJ =25°C  
TJ =125°C  
V
VGT Max.gatevoltage  
required to trigger  
Anodesupply=6V  
resistive load  
270  
150  
80  
TJ =-40°C  
TJ =25°C  
IGT  
Max.gatecurrent  
required to trigger  
Anodesupply=6V  
resistive load  
mA  
TJ =125°C  
TJ =125oC,  
ratedVDRMapplied  
VGD Max.gatevoltage  
thatwillnottrigger  
0.25  
6
V
TJ =125oC,  
ratedVDRMapplied  
IGD  
Max.gatecurrent  
thatwillnottrigger  
mA  
Blocking  
Parameters  
IRK.41  
IRK.56  
Units  
mA  
Conditions  
IRRM Max. peak reverse and  
IDRM off-state leakage current  
at VRRM, VDRM  
15  
TJ = 125 oC, gate open circuit  
2500 (1 min)  
3500 (1 sec)  
50 Hz, circuit to base, all terminals  
shorted  
VINS RMS isolation voltage  
V
dv/dt Max. critical rate of rise  
of off-state voltage (5)  
TJ = 125oC, linear to 0.67 VDRM  
gate open circuit  
,
500  
V/µs  
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.  
Thermal and Mechanical Specifications  
Parameters  
IRK.41  
IRK.56  
Units  
°C  
Conditions  
TJ  
T
Junction operating  
temperature range  
Storage temp. range  
- 40 to 125  
-40to125  
stg  
RthJC Max. internalthermal  
resistance, junction  
tocase  
0.23  
0.20  
Permodule, DCoperation  
K/W  
Nm  
RthCS Typicalthermalresistance  
case to heatsink  
Mounting surface flat, smooth and greased  
0.1  
T
Mounting torque ± 10%  
to heatsink  
A mounting compound is recommended  
and the torque should be rechecked after a  
period of 3 hours to allow for the spread of  
the compound  
5
3
busbar  
wt  
Approximateweight  
110(4)  
gr(oz)  
Casestyle  
TO-240AA  
JEDEC  
∆R Conduction (per Junction)  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sine half wave conduction  
Rect. wave conduction  
Devices  
Units  
°C/W  
180o  
0.11  
0.09  
120o  
0.13  
0.11  
90o  
0.17  
0.13  
60o  
0.23  
0.18  
30o  
0.34  
0.27  
180o  
0.09  
0.07  
120o  
0.14  
0.11  
90o  
0.18  
0.14  
60o  
0.23  
0.19  
30o  
0.34  
0.28  
IRK.41  
IRK.56  
www.irf.com  
3
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
Ordering Information Table  
Device Code  
IRK.57 types  
With no auxiliary cathode  
IRK  
T
56  
/
16  
A
S90  
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type  
Circuit configuration (See Circuit Configuration table below)  
Current code * *  
* * Available with no auxiliary cathode.  
To specify change:  
41 to 42  
56 to 57  
Voltage code (See Voltage Ratings table)  
A : Gen V  
e.g. : IRKT57/16A etc.  
dv/dt code:  
S90 = dv/dt 1000 V/µs  
No letter = dv/dt 500 Vµs  
Outline Table  
Dimensions are in millimeters and [inches]  
IRKN  
IRKT  
IRKH  
IRKL  
(1)  
~
(1)  
~
(1)  
~
ꢀ1)  
-
+
(2)  
+
(2)  
+
(2)  
+
ꢀ2)  
-
(3)  
-
(3)  
-
(3)  
+
ꢀ3)  
G1 K1  
(4) (5)  
G1  
(4) (5)  
K2 G2  
(7) (6)  
G1 K1  
K2 G2  
(7) (6)  
K1  
ꢀ4) ꢀ5)  
NOTE: To order the Optional Hardware see Bulletin I27900  
www.irf.com  
4
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
IRK.41.. Se rie s  
IRK.41.. Se rie s  
(DC) = 0.46 K/W  
R
(DC) = 0.46 K/W  
R
thJC  
thJC  
C o nd uc tio n Angle  
Co nd uc tio n Pe rio d  
30°  
60°  
30°  
60°  
90°  
90°  
120°  
120°  
40  
180°  
180°  
DC  
60  
80  
80  
0
10  
20  
30  
40  
50  
0
20  
80  
Ave ra g e On-sta te Curre nt (A)  
Ave ra g e On-sta te Curre nt (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
70  
60  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
DC  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
RMS Lim it  
RMS Lim it  
C o nd uc tio n Ang le  
C ond uc tio n Pe rio d  
IRK.41.. Se rie s  
Pe r Junc tion  
T = 125°C  
IRK.41.. Se rie s  
Pe r Junc tion  
= 125°C  
T
J
J
0
10  
20  
30  
40  
50  
0
20  
Ave ra g e O n-sta te Curre nt (A)  
Fig. 4 - On-state Power Loss Characteristics  
40  
60  
80  
Ave ra g e On-sta te Curre nt (A)  
Fig. 3 - On-state Power Loss Characteristics  
800  
700  
600  
500  
400  
300  
900  
At Any Ra te d Loa d Cond ition And With  
Ma ximum Non Re p e titive Surg e Curre nt  
Ve rsus Pulse Tra in Dura tion. Control  
Of Cond uc tio n Ma y Not Be Ma inta ine d .  
Ra te d V  
Ap p lie d Following Surg e .  
RRM  
Initia l T = 125°C  
J
800  
700  
600  
500  
400  
300  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
Initia l T = 125°C  
J
No Volta g e Re a p p lie d  
Ra te d V  
Re a p p lie d  
RRM  
IRK.41.. Se rie s  
Pe r Junc tio n  
IRK.41.. Se rie s  
Pe r Junc tion  
1
10  
100  
0.01  
0.1  
Pulse Tra in Dura tion (s)  
1
Num b e r O f Eq ua l Am p litud e Ha lf C yc le Curre nt Pulse s (N)  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Fig. 6 - Maximum Non-Repetitive Surge Current  
www.irf.com  
5
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
140  
120  
100  
80  
180°  
120°  
90°  
60°  
30°  
60  
Conduc tion Ang le  
40  
20  
0
IRK.41.. Se rie s  
Pe r Mod ule  
T
= 125°C  
J
0
20  
40  
60  
80  
100 20  
40  
60  
80 100 120 140  
Tota l RMS Outp ut Curre nt (A)  
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C)  
Fig. 7 - On-state Power Loss Characteristics  
350  
300  
250  
200  
150  
100  
50  
180°  
(Sine )  
180°  
(Re c t)  
2 x IRK.41.. Se rie s  
Sing le Pha se Brid g e  
C onne c te d  
T
= 125°C  
J
0
0
20  
40  
60  
80  
100 20  
40  
60  
80 100 120 140  
To ta l Outp ut Curre nt (A)  
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )  
Fig. 8 - On-state Power Loss Characteristics  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
120°  
(Re c t)  
3 x IRK.41.. Se rie s  
Thre e Pha se Brid g e  
Co nne c te d  
T
= 125°C  
J
0
0
20  
40  
60  
80 100 120 140  
20  
40  
60  
80 100 120 140  
To ta l Outp ut Curre nt (A)  
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C )  
Fig. 9 - On-state Power Loss Characteristics  
www.irf.com  
6
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
IRK.56.. Se rie s  
IRK.56.. Se rie s  
R
(DC) = 0.40 K/ W  
C o nd uc tio n Pe rio d  
R
(DC) = 0.40 K/ W  
thJC  
thJC  
C o nd uc tio n Ang le  
30°  
60°  
90°  
90°  
80  
120°  
180°  
80  
60°  
120°  
DC  
80  
30°  
20  
180°  
70  
70  
0
10  
20  
30  
40  
50  
60  
70  
0
40  
60  
100  
Ave ra g e O n-sta te Curre nt (A)  
Ave ra g e On-sta te Curre nt (A)  
Fig. 10 - Current Ratings Characteristics  
Fig. 11 - Current Ratings Characteristics  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
180°  
120°  
90°  
60°  
30°  
DC  
180°  
120°  
90°  
60°  
30°  
RMS Lim it  
RMS Lim it  
Co nd uc tio n Pe rio d  
C o nd uc tio n Ang le  
IRK.56.. Se rie s  
Pe r Junc tion  
IRK.56.. Se rie s  
Pe r Junc tio n  
T
= 125°C  
J
T
= 125°C  
J
0
10  
Ave ra g e O n-sta te C urre nt (A)  
Fig. 12 - On-state Power Loss Characteristics  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
Ave ra g e On-sta te C urre nt (A)  
Fig. 13 - On-state Power Loss Characteristics  
1200  
1400  
At Any Ra te d Loa d Cond ition And With  
Ma ximum Non Re p e titive Surg e Curre nt  
Ve rsus Pulse Tra in Dura tion. Control  
Of Cond uc tio n Ma y Not Be Ma inta ine d .  
Ra te d V  
Ap p lie d Following Surg e .  
RRM  
1100  
1000  
900  
800  
700  
600  
500  
Initia l T = 125°C  
J
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
1200  
1000  
800  
Initia l T = 125°C  
J
No Volta g e Re a p p lie d  
Ra te d V  
Re a p p lie d  
RRM  
600  
IRK.56.. Se rie s  
Pe r Junc tion  
IRK.56.. Se rie s  
Pe r Junc tion  
400  
1
10  
100  
0.01  
0.1  
Pulse Tra in Dura tio n (s)  
1
Num b e r O f Eq ua l Am p litud e Ha lf Cyc le Curre nt Pulse s (N)  
Fig. 15 - Maximum Non-Repetitive Surge Current  
Fig. 14 - Maximum Non-Repetitive Surge Current  
www.irf.com  
7
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
200  
180  
160  
140  
120  
100  
80  
R
0
0
.
.
3
2
180°  
120°  
90°  
60°  
30°  
K
K
0
/
/
.
W
4
W
K
=
/
W
0
.
1
K
/
W
-
D
e
l
t
a
R
1
2
K
/
W
W
Cond uc tion Ang le  
60  
40  
20  
0
K
/
IRK.56.. Se rie s  
Pe r Mod ule  
T
= 125°C  
J
0
20  
40  
60  
80  
100 120 140  
20  
40  
60  
80  
100 120 140  
Tota l RMS Outp ut Curre nt (A)  
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )  
Fig. 16 - On-state Power Loss Characteristics  
450  
400  
350  
300  
250  
200  
150  
100  
50  
0
.
2
K
/
W
180°  
(Sine )  
180°  
(Re c t)  
0
.
5
K
/
W
1
K
/
2 x IRK.56.. Se rie s  
Sing le Pha se Brid g e  
C onne c te d  
W
2
K
/
W
T
= 125°C  
J
0
0
20  
40  
To ta l Outp ut Curre nt (A)  
Fig. 17 - On-state Power Loss Characteristics  
60  
80  
100 120 140 20  
40  
60  
80  
100 120 140  
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )  
600  
500  
400  
300  
200  
100  
0
120°  
(Re c t)  
3 x IRK.56.. Se rie s  
Thre e Pha se Brid g e  
C onne c te d  
T
= 125°C  
J
0
20 40 60 80 100 120 140 160 180  
20  
40  
60  
80 100 120 140  
To ta l Outp ut Curre nt (A)  
Ma xim um Allo wa b le Amb ie nt Te m p e ra ture (°C)  
Fig. 18 - On-state Power Loss Characteristics  
www.irf.com  
8
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
1000  
100  
10  
1000  
100  
10  
T = 25°C  
J
T = 25°C  
J
T = 125°C  
J
T = 125°C  
J
IRK.56.. Se rie s  
Pe r Junc tion  
IRK.41.. Se rie s  
Pe r Junc tio n  
1
1
0
1
2
3
4
5
6
7
0.5  
1
1.5  
Insta nta ne o us O n-sta te Volta g e (V)  
Fig. 20 - On-state Voltage Drop Characteristics  
2
2.5  
3
3.5  
4
4.5  
Insta nta ne o us On-sta te Vo lta g e (V)  
Fig. 19 - On-state Voltage Drop Characteristics  
500  
450  
400  
350  
300  
250  
200  
150  
100  
110  
100  
90  
I
= 200 A  
IRK.41.. Se rie s  
IRK.56.. Se rie s  
TM  
I
= 200 A  
100 A  
TM  
100 A  
50 A  
20 A  
T = 125 °C  
J
80  
50 A  
70  
10 A  
60  
20 A  
10 A  
50  
IRK.41.. Se rie s  
IRK.56.. Se rie s  
T = 125 °C  
40  
J
30  
10 20 30 40 50 60 70 80 90 100  
10 20 30 40 50 60 70 80 90 100  
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)  
Ra te O f Fa ll Of On-sta te Curre nt - d i/ dt (A/ µs)  
Fig. 21 - Recovery Charge Characteristics  
Fig. 22 - Recovery Current Characteristics  
1
Ste a d y Sta te Va lue :  
R
R
= 0.46 K/W  
= 0.40 K/W  
thJC  
thJC  
(DC Op e ra tion)  
IRK.41.. Se rie s  
IRK.56.. Se rie s  
0.1  
Pe r Junc tion  
0.01  
0.001  
0.01  
0.1  
Sq ua re Wa ve Pulse Dura tion (s)  
1
10  
Fig. 23 - Thermal Impedance ZthJC Characteristics  
www.irf.com  
9
IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
100  
Re c ta ng ula r g a te p ulse  
(1) PGM = 100 W, tp = 500 µs  
(2) PGM = 50 W, tp = 1 ms  
(3) PGM = 20 W, tp = 25 ms  
(4) PGM = 10 W, tp = 5 ms  
a )Re c o m m e nd e d lo a d line for  
ra te d d i/ d t: 20 V, 30 ohm s  
tr = 0.5 µs, tp >= 6 µs  
b )Re c o m m e nd e d loa d line fo r  
<= 30% ra te d d i/ d t: 20 V, 65 o hm s  
tr = 1 µs, tp >= 6 µs  
10  
1
(a )  
(b )  
(4)  
(2) (1)  
(3)  
VGD  
IGD  
0.01  
IRK.41../.56.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)  
0.1 10 100 1000  
0.1  
0.001  
1
Insta nta ne ous Ga te Curre nt (A)  
Fig. 24 - Gate Characteristics  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 10/02  
www.irf.com  
10  

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