IRKT71/14A0 [INFINEON]
Silicon Controlled Rectifier, 75000mA I(T), 1400V V(RRM),;
| 型号： | IRKT71/14A0 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 75000mA I(T), 1400V V(RRM), 栅 栅极 |
| 文件： | 总10页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27132 rev. E 10/01
IRK.71, .91 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
ADD-A-pakTM GEN V Power Modules
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL under approval
Full compatible TO-240AA
75 A
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
95 A
3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Theelectricalterminalsaresecuredagainstaxialpull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltageapplicationssuchashighvoltageregulatedpower
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters IRK.71
IRK.91
Units
IT(AV)or IF(AV)
75
95
A
A
@85°C
IO(RMS) (*)
165
210
ITSM @50Hz
IFSM @60Hz
1665
1740
1785
1870
A
A
2
2
I t @50Hz
13.86
15.91
KA s
2
@60Hz
12.56
138.6
14.52
159.1
KA s
2
2
I √t
KA √s
VRRM range
TSTG
400to1600
V
- 40 to 125
- 40 to125
oC
oC
TJ
(*) As AC switch.
1
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
Voltage
IDRM
Type number
Code
peak reverse voltage peak reverse voltage
125°C
-
V
400
600
800
V
500
700
900
V
400
600
800
mA
04
06
08
IRK.71/ .91
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IT(AV) Max. average on-state
current (Thyristors)
IF(AV) Max. average forward
current (Diodes)
IRK.71
75
IRK.91
Units
Conditions
180o conduction, half sine wave,
TC=85oC
95
IO(RMS Max. continuous RMS
)
on-state current.
As AC switch
165
210
or
I(RMS)
I(RMS)
A
ITSM
or
IFSM
Max.peak, one cycle
non-repetitive on-state
or forward current
1665
1740
1400
1470
1850
1940
13.86
12.56
9.80
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ =TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
InitialTJ =TJ max.
t=10ms 100%VRRM
KA2s
8.96
t=8.3ms reapplied
t=10ms TJ =25oC,
17.11
15.60
138.6
t= 8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max.value of threshold
voltage (2)
0.82
0.85
3.00
0.80
0.85
2.40
Low level (3)
TJ = TJ max
High level (4)
V
r
Max.value of on-state
Low level
(3)
t
TJ = TJ max
mΩ
slope resistance(2)
Max. peak on-state or
2.90
2.25
High level (4)
VTM
VFM
ITM=π xIT(AV)
TJ = 25°C
1.59
1.58
V
forward voltage
IFM=π xIF(AV)
di/dt Max. non-repetitive rate
TJ = 25oC, from 0.67 VDRM
,
of rise of turned on
current
150
200
400
A/µs
mA
I
TM =π x IT(AV), I = 500mA,
g
t < 0.5 µs, t > 6 µs
TJ =25oC,anodesupply=6V,
resistive load, gate open circuit
TJ=25oC,anode supply=6V, resistive load
r
p
IH
IL
Max.holdingcurrent
Max. latching current
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
Triggering
Parameters
PGM Max. peak gate power
IRK.71
12
IRK.91
12
Units
Conditions
W
A
PG(AV) Max. average gate power
3.0
3.0
IGM
Max. peak gate current
3.0
3.0
-VGM Max. peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
1.7
270
150
80
TJ =-40°C
TJ =25°C
TJ =125°C
TJ =-40°C
TJ =25°C
V
Anode supply=6V
resistive load
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
TJ =125°C
VGD Max. gate voltage
that will not trigger
TJ=125oC,
0.25
6
V
rated VDRM applied
TJ=125oC,
rated VDRM applied
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.71
IRK.91
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
15
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.71
IRK.91
Units
°C
Conditions
TJ
Junction operating
temperature range
Storage temp. range
- 40 to 125
-40to125
T
stg
RthJC Max. internal thermal
resistance, junction
to case
RthCS Typical thermal resistance
case to heatsink
0.165
0.135
Per module, DC operation
K/W
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mounting torque±10%
to heatsink
Nm
busbar
3
wt
Approximate weight
110(4)
gr(oz)
Case style
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.06
0.04
120o
0.07
0.05
90o
60o
0.12
0.08
30o
0.18
0.12
180o
0.04
0.03
120o
0.08
0.05
90o
0.10
0.06
60o
0.13
0.08
30o
0.18
0.12
IRK.71
IRK.91
0.09
0.06
3
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
Ordering Information Table
Device Code
IRK.92 types
With no auxiliary cathode
IRK
T
91
/
16
A
S90
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
Voltage code (See Voltage Ratings table)
A : Gen V
* * Available with no auxiliary cathode.
To specify change:
71 to 72
91 to 92
e.g. : IRKT92/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKH
IRKL
IRKT
(1)
(1)
(1)
~
~
~
+
+
+
(2)
(2)
(2)
-
-
(3)
-
(3)
(3)
G1
K1
G1 K1
(4) (5)
K2 G2
(7) (6)
K2 G2
(4) (5)
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
130
120
110
100
90
130
120
110
100
90
IRK.71.. Series
IRK.71.. Series
(DC) = 0.33 K/W
R
(DC) = 0.33 K/W
R
thJC
thJC
Conduction Period
Conduction Angle
30
30
60
40
60
90
120
90
80
80
180
120
DC
100
180
80
70
70
0
10
20
30
50
60
70
80
0
20
40
60
120
Average On-state Current (A)
Average O n-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
120
100
80
60
40
20
0
140
120
100
80
DC
180
120
90
60
30
180
120
90
60
30
RMS Limit
RMS Limit
60
Conduction Period
Conduction Angle
40
IRK.71.. Series
Per Junction
IRK.71.. Series
Per Junction
20
T
= 125 C
J
T
= 125 C
J
0
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1800
1600
1500
1400
1300
1200
1100
1000
900
M axim um Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May N ot Be Maintained.
At A ny Rated Load Condition And W ith
Rated V
Applied Following Surge.
RRM
1600
1400
1200
1000
800
Initial T = 125
C
J
Initial T = 125
C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No V oltage Reapplied
Rated V Reapplied
RRM
IRK.71.. Series
Per Junction
IRK.71.. Series
Per Junction
800
700
600
0.01
1
10
100
0.1
Pulse Train Duration (s)
1
Nu m b er Of Eq ua l Amp litude Half C ycle C u rrent Pu lse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
5
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
250
200
150
100
R
180
120
90
60
30
0
4
.
3
=
K
/
0
W
0
.
1
.
K
K
/
/
W
W
-
D
e
l
t
a
0
.
7
R
K
/
W
Conduction Angle
IRK.71.. Series
Per Module
50
0
3
K
/
W
T
= 125 C
J
0
0
0
20 40 60 80 100 120 140 160 18
0
20
40
60
80
100 120 140
Total RM S Output Current (A)
M axim um Allow able Am bient Tem perature ( C)
Fig. 7 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
180
(Sin e)
180
t
h
S
A
(Rect)
2 x IRK.71.. Series
Single Phase Bridge
Connected
1
K
/
W
T
= 125 C
J
20 40 60 80 100 120 140 160 180
20
40
60
80
100 120 140
Total Output Current (A)
M axim um Allowable Am bient Tem perature ( C)
Fig. 8 - On-state Power Loss Characteristics
800
700
600
500
400
300
200
100
0
R
t
h
S
A
=
0
.
1
K
/
120
(Rect)
W
0
-
.
2
D
K
e
/
W
l
t
a
R
0
.
3
K
/
W
3 x IRK.71.. Series
Three Phase Bridge
Connected
1
K
/
W
T
= 125 C
J
40
80
120
160
200
240
20
40
60
80
100
120
140
Total Output Current (A)
M axim um Allow able Am bient Tem perature ( C )
Fig. 9 - On-state Power Loss Characteristics
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6
IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
130
120
110
100
90
130
120
110
100
90
IRK.91.. Series
IRK.91.. Series
R
(DC) = 0.27 K/W
R
(D C ) = 0.27 K/W
thJC
thJC
Conduction A ngle
Conduction Pe riod
30
30
60
60
60
90
120
80
80
80
90
180
120
DC
180
70
70
0
20
40
60
100
0
20
40
80 100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
140
120
100
80
180
160
140
120
100
80
180
120
90
60
30
DC
180
120
90
60
30
RMS Lim it
RMS Lim it
60
Conduction Period
Conduction A ngle
60
40
IRK.91.. Series
Per Junction
IRK.91.. Series
Per Junction
40
20
20
T
= 125 C
T
= 125 C
J
J
0
0
0
20
40
60
80
100
0
20
40
60
80 100 120 140 160
Average O n-state Current (A)
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
Fig. 13 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Maxim um No n Repetitive Surg e Current
Versus Pulse Train Duration. Control
Of Conduction May N ot Be Maintained.
At A ny Rated Load Conditio n And W ith
Rated V
Applied Following Surg e.
RRM
Initial T = 125
C
J
Initial T = 125
C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V Reapplied
RRM
IRK.91.. Series
Per Junction
IRK.91.. Series
Per Junction
800
700
600
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Nu m b er Of E qu a l Am plitu de Half C ycle C u rrent Pu lses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
7
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
350
300
250
200
150
R
t
h
180
120
90
60
30
S
A
0
.
2
=
K
0
/
.
W
1
K
/
W
-
D
e
l
t
a
0
R
.
5
K
/
W
Conduction Angle
1
K
K
/
/
W
W
100
50
0
IRK.91.. Series
Per Module
3
T
= 125 C
J
0
40
80
120
160
200
24
0
20
40
60
80
100 120
140
Total RMS Output Current (A)
M axim um Allow able Am bient Tem perature ( C)
Fig. 16 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
180
(Sine)
180
(Rect)
0
.
2
K
/
W
0
.
3
K
/
W
2 x IRK.91.. Series
Single Phase Bridge
Connected
1
K
/
W
T
= 125 C
J
0
40
80
120
160
200
20
40
60
80
100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature ( C)
Fig. 17 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
R
=
0
.
1
K
/
W
120
(Rect)
-
D
e
l
t
a
R
3 x IRK.91.. Series
Three Phase Bridge
Connected
0
.
5
K
/
W
T
= 125 C
J
0
40
80
120
160 200 240
280
20
40
60
80
100
120 140
Total O utput Current (A)
M axim um Allowable Am bient Tem perature ( C)
Fig. 18 - On-state Power Loss Characteristics
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8
IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
1000
100
10
1000
100
10
T
T
= 25 C
J
J
T
T
= 25 C
J
J
= 125
C
= 125
C
IRK.71.. Series
Per Junction
IRK.91.. Series
Per Junction
1
0.5
1
0.5
1
1.5
2
2.5
3
3.5
4
1
1.5
2
2.5
3
3.5
Instantaneous O n-state Voltage (V)
Instantaneous O n-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics
Fig. 20 - On-state Voltage Drop Characteristics
700
600
500
400
300
200
100
140
IRK.71.. Series
IRK.91.. Series
I
= 200 A
100 A
TM
I
= 200 A
100 A
IRK.71.. Series
IRK.91.. Series
TM
120
100
80
T
= 125 C
J
T
= 125 C
J
50 A
50 A
20 A
10 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate O f Fall Of O n-state Current - di/dt (A/ s)
Rate Of Fall O f Forw ard Current - di/dt (A/ s)
Fig. 21 - Recovery Charge Characteristics
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
R
R
= 0.33 K/W
= 0.27 K/W
thJC
thJC
(DC Operation)
IRK.71.. Series
IRK.91.. Series
0.1
Per Junction
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
9
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
(1) PGM = 200 W , tp = 300
(2) PGM = 60 W , tp = 1 m s
(3) PGM = 30 W , tp = 2 m s
(4) PGM = 12 W , tp = 5 m s
s
tr = 0.5 s, tp >= 6
s
b)Recommended load line for
<= 30% rated di/dt: 15 V, 40 ohms
10
1
tr = 1 s, tp >= 6
s
(a)
(b)
(4)
(3) (2)
(1)
VGD
IG D
IRK.71../.91.. Series Frequency Lim ited by PG(AV)
0.1 10 100
0.1
0.001
0.01
1
1000
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
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10
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