IRKT92/08 [INFINEON]
Silicon Controlled Rectifier, 210A I(T)RMS, 90000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA;
| 型号： | IRKT92/08 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 210A I(T)RMS, 90000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA 栅极 触发装置 可控硅整流器 二极管 局域网 |
| 文件： | 总10页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27132 rev. H 10/02
IRK.71, .91 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
ADD-A-pakTM GEN V Power Modules
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
Full compatible TO-240AA
75 A
95 A
High Surge capability
Easy Mounting on heatsink
UL E78996 approved
Al203 DBC insulator
Heatsink grounded
3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Theelectricalterminalsaresecuredagainstaxialpull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltageapplicationssuchashighvoltageregulatedpower
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters IRK.71
IRK.91
Units
IT(AV)or IF(AV)
75
95
A
A
@85°C
IO(RMS) (*)
165
210
ITSM @50Hz
IFSM @60Hz
1665
1740
1785
1870
A
A
2
2
I t @50Hz
13.86
15.91
KA s
2
@60Hz
12.56
138.6
14.52
159.1
KA s
2
2
I √t
KA √s
VRRM range
TSTG
400to1600
V
- 40 to 125
- 40 to125
oC
oC
TJ
(*) As AC switch.
1
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
IDRM
125°C
Voltage
Type number
Code
-
V
V
V
mA
04
06
08
400
500
400
600
700
600
800
900
800
IRK.71/ .91
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IRK.71
75
IRK.91
Units
Conditions
IT(AV) Max. average on-state
current (Thyristors)
180o conduction, half sine wave,
TC=85oC
95
IF(AV) Max. average forward
current (Diodes)
IO(RMS Max. continuous RMS
)
on-state current.
As AC switch
165
210
or
I(RMS)
I(RMS)
A
ITSM
or
Max.peak, one cycle
non-repetitive on-state
or forward current
1665
1740
1400
1470
1850
1940
13.86
12.56
9.80
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ =TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
IFSM
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
InitialTJ =TJ max.
t=10ms 100%VRRM
KA2s
8.96
t=8.3ms reapplied
t=10ms TJ =25oC,
17.11
15.60
138.6
t= 8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max.value of threshold
voltage (2)
0.82
0.85
3.00
0.80
0.85
2.40
Low level (3)
TJ = TJ max
High level (4)
V
r
Max.value of on-state
Low level
(3)
t
TJ = TJ max
mΩ
slope resistance(2)
Max. peak on-state or
2.90
2.25
High level (4)
VTM
VFM
ITM=π xIT(AV)
TJ = 25°C
1.59
1.58
V
forward voltage
IFM=π xIF(AV)
di/dt Max. non-repetitive rate
TJ = 25oC, from 0.67 VDRM
,
of rise of turned on
current
150
200
400
A/µs
mA
ITM =π x IT(AV), I = 500mA,
g
t < 0.5 µs, t > 6 µs
r
p
IH
Max.holdingcurrent
TJ =25oC,anodesupply=6V,
resistive load, gate open circuit
IL
Max. latching current
TJ=25oC,anode supply=6V, resistive load
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
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2
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
Triggering
Parameters
IRK.71
12
IRK.91
12
Units
Conditions
PGM Max. peak gate power
W
A
PG(AV) Max. average gate power
3.0
3.0
IGM
Max. peak gate current
3.0
3.0
-VGM Max. peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
TJ =-40°C
TJ =25°C
V
Anode supply=6V
resistive load
1.7
270
150
80
TJ =125°C
TJ =-40°C
TJ =25°C
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
TJ =125°C
TJ=125oC,
rated VDRM applied
TJ=125oC,
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
mA
rated VDRM applied
Blocking
Parameters
IRK.71
IRK.91
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
15
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.71
IRK.91
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temp. range
- 40 to 125
-40to125
stg
RthJC Max. internal thermal
resistance, junction
to case
0.165
0.135
Per module, DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mounting torque±10%
to heatsink
Nm
busbar
3
wt
Approximate weight
110(4)
gr(oz)
Case style
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.06
0.04
120o
0.07
0.05
90o
0.09
0.06
60o
0.12
0.08
30o
0.18
0.12
180o
0.04
0.03
120o
0.08
0.05
90o
0.10
0.06
60o
0.13
0.08
30o
0.18
0.12
IRK.71
IRK.91
3
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
Ordering Information Table
Device Code
IRK.92 types
With no auxiliary cathode
IRK
T
91
/
16
A
S90
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
* * Available with no auxiliary cathode.
To specify change:
71 to 72
91 to 92
Voltage code (See Voltage Ratings table)
A : Gen V
e.g. : IRKT92/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
~
(1)
~
(1)
~
ꢀ1)
-
+
(2)
+
(2)
+
(2)
+
ꢀ2)
-
(3)
-
(3)
-
(3)
+
ꢀ3)
G1 K1
G1
K2 G2
G1 K1
K2 G2
K1
(4) (5)
(7) (6)
(4) (5)
(7) (6)
ꢀ4) ꢀ5)
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
130
120
110
100
90
130
120
110
100
90
IRK.71.. Se rie s
IRK.71.. Se rie s
R thJC (DC) = 0.33 K/ W
R
(DC) = 0.33 K/ W
thJC
Cond uc tion Pe riod
Co nd uc tion Ang le
30°
30°
60°
60°
90°
120°
90°
80
80
180°
120°
DC
100
180°
80
70
70
0
10 20 30 40 50 60 70 80
Ave ra g e On-sta te Curre nt (A)
0
20
40
60
120
Ave ra g e O n-sta te Curre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
120
100
80
60
40
20
0
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
Cond uc tio n Pe riod
Co nd u c tion Ang le
40
IRK.71.. Se rie s
Pe r Junc tio n
IRK.71.. Se rie s
Pe r Junc tio n
20
T = 125°C
J
T = 125°C
J
0
0
10 20 30 40 50 60 70 80
Ave ra g e On-sta te Curre nt (A)
0
20
Ave ra g e On-sta te Curre nt (A)
Fig. 4 - On-state Power Loss Characteristics
40
60
80
100
120
Fig. 3 - On-state Power Loss Characteristics
1800
1600
1500
1400
1300
1200
1100
1000
900
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tio n Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Cond ition And With
Ra te d V
RRM
Ap p lie d Following Surg e .
1600
1400
1200
1000
800
Initia l T = 125°C
J
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.71.. Se rie s
Pe r Junc tion
IRK.71.. Se rie s
Pe r Junc tion
800
700
600
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
1
Nu m b e r O f Eq ua l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
5
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
250
200
150
100
R
0
180°
120°
90°
60°
30°
.
2
K
0
4
/
.
W
3
=
K
/
0
W
0
.
1
.
K
/
K
/
W
W
W
0
.
5
-
D
K
/
e
l
t
a
R
Co nd uc tio n Ang le
1
.
5
K
/
W
IRK.71.. Se rie s
Pe r Mod ule
50
0
T
= 125°C
J
0
0
0
20 40 60 80 100 120 140 160 18
0
20
40
60
80 100 120 140
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C)
Tota l RMS Outp ut Curre nt (A)
Fig. 7 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
180°
(Sin e )
180°
(Re c t)
0
.
2
K
/
W
0
.
5
K
/
W
2 x IRK.71.. Se rie s
Sing le Pha se Brid g e
Co nne c te d
1
K
/
W
T
= 125°C
J
20 40 60 80 100 120 140 160 180 20
40
60
80 100 120 140
Tota l Outp ut C urre nt (A)
Ma xim um Allo wa b le Am bie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
800
700
600
500
400
300
200
100
0
R
=
0
.
1
K
/
120°
(Re c t)
W
0
-
.
2
D
K
e
/
W
l
t
a
R
3 x IRK.71.. Se rie s
Thre e Pha se Brid g e
C o nne c te d
T
= 125°C
J
40
80
To ta l Outp ut C urre nt (A)
Fig. 9 - On-state Power Loss Characteristics
120
160
200
240
20
40
60
80 100 120 140
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )
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6
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
130
120
110
100
90
130
120
110
100
90
IRK.91.. Se rie s
IRK.91.. Se rie s
R
(DC) = 0.27 K/W
R
(DC ) = 0.27 K/ W
thJC
thJC
Cond uc tion Ang le
C o nd uc tio n Pe rio d
30°
30°
60°
60°
90°
120°
90°
120°
80
80
80
180°
DC
180°
70
70
0
20
40
60
100
0
20 40 60 80 100 120 140 160
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te Curre nt (A)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
Co nd uc tio n Pe rio d
Cond uc tio n Ang le
60
40
IRK.91.. Se rie s
Pe r Junc tio n
IRK.91.. Se rie s
Pe r Junc tio n
40
20
20
T = 125°C
T = 125°C
J
J
0
0
0
20
40
60
80
100
0
20 40 60 80 100 120 140 160
Ave ra g e On-sta te Curre nt (A)
Ave ra g e O n-sta te Curre nt (A)
Fig. 12 - On-state Power Loss Characteristics
Fig. 13 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Ma xim um No n Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tio n Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Cond itio n And With
Ra te d V
Ap p lie d Following Surg e .
RRM
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.91.. Se rie s
Pe r Junc tion
IRK.91.. Se rie s
Pe r Junc tion
800
700
600
0.01
0.1
Pulse Tra in Dura tio n (s)
1
1
10
100
Nu m b e r O f Eq u a l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
7
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
350
300
250
200
150
R
t
h
180°
120°
90°
60°
30°
S
A
0
.
2
=
K
0
/
.
W
1
K
0
/
.
W
3
K
/
-
W
D
e
l
t
a
0
R
.
5
K
/
W
0
.
7
Co nd uc tio n Ang le
K
/
W
100
50
0
IRK.91.. Se rie s
Pe r Mod ule
3
K
/
W
T
= 125°C
J
0
40
80
120
160
200
24
0
20
40
60
80
100 120 140
Tota l RMS Outp ut Curre nt (A)
Ma xim um Allowa ble Am b ie nt Te m p e ra ture (°C)
Fig. 16 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
R
180°
(Sine )
180°
=
0
.
1
K
(Re c t)
/
W
-
D
e
l
t
a
R
0
.
3
K
/
W
W
0
1
.
5
K
/
2 x IRK.91.. Se rie s
Sing le Pha se Brid g e
Co nne c te d
K
/
W
T
= 125°C
J
0
40
80
120
160
200
20
40
60
80 100 120 140
Tota l Outp ut Curre nt (A)
Ma xim um Allo wa b le Am b ie nt Te mp e ra ture (°C)
Fig. 17 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
R
=
0
.
1
K
/
W
120°
(Re c t)
-
D
e
0
l
t
.
2
a
K
R
/
W
W
W
0
.
.
3
K
/
3 x IRK.91.. Se rie s
Thre e Pha se Brid g e
Co nne c te d
0
5
K
/
T J = 125°C
0
40
80 120 160 200 240 280
Tota l O utp ut Curre nt (A)
20
40
60
80 100 120 140
Ma xim um Allo wa b le Am b ie nt Te m p e ra ture (°C )
Fig. 18 - On-state Power Loss Characteristics
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8
IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
1000
100
10
1000
100
10
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
IRK.71.. Se rie s
Pe r Junc tion
IRK.91.. Se rie s
Pe r Junc tio n
1
1
0.5
1
1.5
Insta nta ne o us O n-sta te Volta g e (V)
Fig. 19 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
0.5
1
1.5
Insta nta ne o us O n-sta te Volta g e (V)
Fig. 20 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
700
600
500
400
300
200
100
140
IRK.71.. Se rie s
IRK.91.. Se rie s
I
= 200 A
100 A
TM
I
= 200 A
100 A
IRK.71.. Se rie s
IRK.91.. Se rie s
TM
120
100
80
T = 125 °C
J
T
= 125 °C
J
50 A
50 A
20 A
10 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of O n-sta te Curre nt - d i/ d t (A/ µs)
Ra te Of Fa ll O f Fo rwa rd Curre nt - d i/ d t (A/ µs)
Fig. 21 - Recovery Charge Characteristics
Fig. 22 - Recovery Current Characteristics
1
Ste a d y Sta te Va lue :
R
R
= 0.33 K/W
= 0.27 K/W
thJC
thJC
(DC Op e ra tio n)
IRK.71.. Se rie s
IRK.91.. Se rie s
0.1
Pe r Junc tio n
0.01
0.001
0.01
0.1
Sq ua re Wa ve Pulse Dura tio n (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
9
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IRK.71, .91 Series
Bulletin I27132 rev. H 10/02
100
Re c ta ng ula r g a te p ulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 m s
(3) PGM = 30 W, tp = 2 m s
(4) PGM = 12 W, tp = 5 m s
a )Re c o m m e nd e d lo a d line fo r
ra te d d i/d t: 20 V, 20 o hms
tr = 0.5 µs, tp >= 6 µs
b )Re c o m m e nd e d lo a d line fo r
<= 30% ra te d d i/ d t: 15 V, 40 o hm s
tr = 1 µs, tp >= 6 µs
10
1
(a )
(b )
(4) (3) (2)
(1)
VGD
IG D
IRK.71../ .91.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)
0.1 10 100
0.1
0.001
0.01
1
1000
Insta nta ne o us Ga te Curre nt (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
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相关型号：
IRKT92/08A
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