IRKTF72-12EPN [INFINEON]
Silicon Controlled Rectifier, 111.47A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element;型号: | IRKTF72-12EPN |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 111.47A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element 栅极 触发装置 快速晶闸管 可控硅整流器 二极管 局域网 |
文件: | 总8页 (文件大小:196K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I27104 rev. A 09/97
IRK.F72.. SERIES
INT-A-pakä Power Modules
FAST THYRISTOR/ DIODE and
THYRISTOR/THYRISTOR
Features
Fast turn-off thyristor
71 A
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV)
IRK.F72..
71
Units
A
°C
A
@ TC
90
IT(RMS)
ITSM
158
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2100
A
2200
A
2
2
I t
21.6
KA s
2
19.8
KA s
2
2
I √t
216
KA √s
t
20 and 25
2
µs
µs
V
q
t
rr
VDRM/VRRM
upto1200
-40to125
o
TJ
range
C
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1
IRK.F72.. Series
Bulletin I27104 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
@ TJ = 125°C
mA
Type number
IRK.F72..
peak reverse voltage
repetitive peak rev. voltage
V
V
08
12
800
1200
800
1200
30
Current Carrying Capacity
ITM
ITM
ITM
Frequency f
Units
180oel
100µs
180oel
50Hz
140
230
280
210
180
140
220
250
210
205
165
345
406
330
310
235
1860
900
320
205
-
2590
1290
470
310
-
A
A
A
A
A
400Hz
170
135
115
85
2500Hz
5000Hz
10000Hz
Recovery voltage Vr
50
50
50
50
50
50
V
V
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
80%VDRM
80%VDRM
80%VDRM
50
90
50
60
-
-
-
-
A/µs
°C
90
60
90
60
Equivalent values for RC circuit
22Ω / 0.15µF
22Ω / 0.15µF
22 Ω/ 0.15µF
On-state Conduction
Parameter
IRK.F72..
Units Conditions
IT(AV)
Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS current
71
90
A
°C
A
180° conduction, half sine wave
158
TC = 90°C, as AC switch
ITSM
Maximum peak, one-cycle,
non-repetitive surge current
2100
2200
1750
1830
21.6
19.8
15.3
14.0
216
A
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = 125°C
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
1.28
1.32
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
3.20
3.00
2.40
600
mW (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
t2
VTM
IH
V
Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
mA TJ = 25°C, IT > 30 A
IL
Typical latching current
1000
mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
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IRK.F72.. Series
Bulletin I27104 rev. A 09/97
Switching
Parameter
IRK.F72..
800
Units Conditions
di/dt
Maximum non-repetitive rate of rise
A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
TJ = 125°C
t
Maximum recovery time
Maximum turn-off time
2
µs
µs
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
rr
t
K
J
q
20
25
VR = 50V, dv/dt = 400V/µs linear to 80% VDRM
Blocking
Parameter
IRK.F72..
1000
Units Conditions
dv/dt
Maximum critical rate of rise of off-state
voltage
V/µs TJ = 125°C., exponential to = 67% VDRM
VINS
RMS isolation voltage
3000
30
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
IRRM
IDRM
Maximum peak reverse and off-state
leakage current
mA TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum peak average gate power
IGM Maximum peak positive gate current
- VGM Maximum peak negative gate voltage
IRK.F72..
Units Conditions
PGM
60
10
10
5
W
W
A
f = 50 Hz, d% = 50
TJ = 125°C, f = 50Hz, d% = 50
TJ = 125°C, t < 5ms
p
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
3
mA TJ = 25°C, Vak 12V, Ra = 6
VGT
IGD
VGD
V
20
0.25
mA TJ = 125°C, rated VDRM applied
V
DC gate voltage not to trigger
Thermal and Mechanical Specifications
Parameter
IRK.F72..
- 40 to 125
- 40 to 150
0.17
Units Conditions
°C
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
0.035
K/W Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
Nm
T
Mounting torque ± 10% IAP to heatsink
busbar to IAP
4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
should be rechecked after a period of 3 hoursto allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
(lb*in)
restrained during tightening. Threads must be
lubricatedwithacompound
wt
Approximate weight
g (oz)
3
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IRK.F72.. Series
Bulletin I27104 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.016
0.019
0.024
0.035
0.060
0.011
0.020
0.026
0.037
0.060
K/W
TJ = 125°C
60°
30°
Ordering Information Table
Device Code
IRK
T
F
7
2
-
12
H
K
N
3
4
5
1
2
6
7
8
9
1
2
3
4
5
-
-
-
-
-
Moduletype
Circuitconfiguration
Fast SCR
Current rating: IT(AV) x 10 rounded
1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
6
7
8
-
-
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
dv/dt code: H ≤ 400V/µs
tq code: K ≤ 20µs
J ≤ 25µs
9
-
None = Standarddevices
N
= Aluminumnitradesubstrate
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F72.. Series
Bulletin I27104 rev. A 09/97
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available
on request
-
-
UL identification number for gate and
cathode wire: UL 1385
UL identification number for package:
UL 94V0
For all types
A
B
C
D
E
IRK...1
IRK...2
25 (0.98)
----
----
41 (1.61) 47 (1.85)
23 (0.91) 30 (1.18) 36 (1.42)
----
----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
130
120
110
100
90
130
120
110
100
90
IRK.F72.. Se rie s
(DC ) = 0.25 K/ W
IRK.F72.. Se rie s
R
R
(DC) = 0.25 K/ W
th JC
thJC
Co n d uctio n Period
C on d uc tio n Ang le
30°
30°
60°
60°
90°
90°
80
80
120°
120°
180°
DC
180°
70
0
70
0
10 20 30 40 50 60 70 80
Ave ra g e On-sta te C urre nt (A)
20
40
60
80
100
120
Ave ra g e On -sta te Curre n t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
5
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IRK.F72.. Series
Bulletin I27104 rev. A 09/97
140
200
180
160
140
120
100
80
180°
DC
180°
120°
90°
60°
30°
120°
90°
60°
30°
120
100
80
60
40
20
0
RMS Lim it
RMS Lim it
Co n d uctio n Period
C o nd uc tio n An gle
60
IRK.F72.. Se rie s
Pe r Junc tion
IRK.F72.. Se rie s
Pe r Ju nc tio n
40
T
= 125°C
20
T = 125°C
J
J
0
0
10 20 30 40 50 60 70 80
Ave ra g e O n-sta te Curre nt (A)
0
20
40
60
80
100
120
Ave ra g e O n-sta te C urre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
2000
1800
1600
1400
1200
1000
800
2200
2000
1800
1600
1400
1200
1000
800
Ma xim um No n Re p e titive Surg e C urren t
Ve rsus Pulse Tra in Dura tion. Control
Of Co nd uc tio n Ma y No t Be Ma inta ine d .
At Any Ra te d Lo a d C ond itio n And With
Ra te d V
Ap p lie d Fo llowing Surg e .
RRM
In itia l T = 125°C
J
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.F72.. Se rie s
Pe r Junc tio n
IRK.F72.. Se rie s
Pe r Junc tio n
1
10
100
0.01
0.1
1
Nu mb e r Of Eq ua l Am p litu d e Ha lf C yc le Cu rre nt Pu lse s (N)
Pulse Tra in Dura tion (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1
Ste a d y Sta te Va lue :
R
= 0.25 K/ W
thJC
(DC Op e ra tio n)
0.1
0.01
T = 25°C
J
1000
T = 125°C
J
IRK.F72.. Se rie s
Pe r Junc tion
IRK.F72.. Se rie s
Pe r Junc tio n
100
0.001
0.001
0.01
0.1
1
10
100
1
2
3
4
5
6
7
8
9
10
Insta n ta n e o us O n-sta te Vo lta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
6
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IRK.F72.. Series
Bulletin I27104 rev. A 09/97
120
110
100
90
160
140
120
100
80
I
= 500 A
TM
IRK.F72.. Se rie s
I
= 500 A
300 A
TM
IRK.F72.. Se rie s
T = 125 °C
J
T = 125 °C
J
300 A
200 A
200 A
100 A
80
70
100 A
60
50 A
50
60
40
50 A
30
40
20
20
10
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of O n-sta te C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll Of O n-sta te C urre nt - d i/ dt (A/ µs)
Fig. 9 - Reverse Recovery Charge Characteristic
Fig. 10 - Reverse Recovery Current Characteristic
1E4
1E3
1E2
Sn ub b e r circuit
Snu bb e r c irc u it
IRK.F72.. Series
Sinuso id a l Pulse
IRK.F72.. Se rie s
Sinuso id a l Pulse
R
C
V
= 22 o h m s
= 0.15 µF
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
s
s
s
s
T
= 60 °C
C
tp
T
= 90 °C
C
tp
= 80% V
D
DRM
DRM
D
50 Hz
150
400
50 Hz
1000
150
400
1000
2500
2500
1E2
5000
5000
1
1
E1
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
Snu b b er circuit
Sn ub b e r c irc uit
IRK.F72.. Se rie s
Tra p e zo id a l Pulse
= 60 °C , d i/d t 100A/µs
IRK.F72.. Serie s
Tra p ezo id a l Pulse
R
C
V
= 22 o hms
= 0.15 µF
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
DRM
s
s
s
s
T
T
= 60 °C , d i/dt 50A/µs
tp
C
tp
C
= 80% V
DRM
D
D
50 Hz
150
50 Hz
400
150
1000
400
1000
2500
2500
1E2
5000
5000
1E1
1E2
Pulse Ba se w id th (µs)
Fig. 12 - Frequency Characteristics
1E3
1E
4
1
1
E1
1E3
1E4
Pu lse Ba se wid th (µs)
7
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IRK.F72.. Series
Bulletin I27104 rev. A 09/97
1E4
Snu b b e r circuit
Snub b e r c irc uit
IRK.F72.. Se ries
Tra p e zo id a l Pulse
IRK.F72.. Se rie s
Tra p e zo id a l Pulse
R
C
V
= 22 o hm s
= 0.15 µF
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
s
s
s
s
T
= 90 °C, d i/d t 50A/ µs
T
= 90 °C, d i/d t 100A/µs
tp
C
C
tp
= 80% V
DRM
D
DRM
D
1E3
50 Hz
150
50 Hz
150
400
400
1000
1000
2500
2500
5000
5000
1E2
1E1
1E2
1E3
1E
4
1
1
E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
1E1
10 jo ule s p e r p ulse
10 joule s pe r p ulse
5
5
2.5
2.5
1
0.5
1
0.25
0.5
0.25
0.1
0.05
0.1
0.05
IRK.F72..Se rie s
IRK.F72.. Se rie s
Sinusoida l p ulse
Tra p e zo id a l Pulse
tp
d i/ dt = 50A/µs
tp
1E1
1E2
1E3
1E
4
1
1
E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pu lse Ba se wid th (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Re c ta ngula r g a te pulse
(1) PGM = 10W, tp = 10ms
(2) PGM = 20W, tp = 5ms
(3) PGM = 40W, tp = 2.5ms
a ) Re c om m e nde d lo a d line for
ra te d di/ d t : 20 V, 10 ohm s tr<=1 µs
b ) Re c om m end ed loa d line fo r
<=30% ra te d di/ d t : 10 V, 10 ohm s
tr<=1 µs
(a )
(b )
(1)
(2)
(3)
VGD
IG D
IRK.F72.. Se rie s Fre q ue nc y Limite d b y PG (AV)
0.1
0.01
0.1
1
10
100
Insta n ta ne o us Ga te C urre nt (A)
Fig. 15 - Gate Characteristics
8
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