IRKU105/04 [INFINEON]
Silicon Controlled Rectifier, 165 A, 400 V, SCR, TO-240AA;
| 型号： | IRKU105/04 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 165 A, 400 V, SCR, TO-240AA 局域网 栅 栅极 |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27136 rev. B 09/97
IRKU/V105 SERIES
NEWADD-A-pakTM Power Modules
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
105 A
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
These IRKU/V series of NEW ADD-A-paks use
power thyristors in two circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase bridges
(IRKU+IRKV) or 6-pulse midpoint connection
bridge. These modules are intended for general
purpose high voltage applications such as high
voltage regulated power supplies, battery charge
and DC motor speed control circuits.
Major Ratings and Characteristics
Parameters
IT(AV) @ 85°C
IT(RMS)
IRKU/V105
105
Units
A
A
A
A
165
ITSM @ 50Hz
@ 60Hz
1785
1870
2
2
I t @ 50Hz
15.91
KA s
2
@ 60Hz
14.52
KA s
2
2
I √t
159.1
KA √s
VRRM range
400 to 1600
- 40 to 125
- 40 to130
V
TSTG
TJ
oC
oC
1
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive IRRM
peak off-state voltage, IDRM
Voltage
Type number
Code
gate open circuit
130°C
-
V
V
V
mA
04
400
800
1200
1600
500
900
1300
1700
400
800
1200
1600
08
IRKU/V105
12
20
16
On-state Conduction
Parameters
IRKU/V105
105
Units
Conditions
IT(AV) Max. average on-state
current
180o conduction, halfsinewave,
TC=85oC
A
IT(RMS) Max. RMSon-state
DC
165
77
current.
@TC
°C
ITSM Max. peak, one cycle
non-repetitiveon-state
current
1785
1870
1500
1570
2000
2100
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ = TJ max.
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ=25oC,
A
t=8.3ms no voltage reapplied
I2t
Max.I2tforfusing
15.91
14.52
11.25
10.27
20.00
18.30
t=10ms No voltage
t=8.3ms reapplied
Initial TJ = TJ max.
t=10ms 100% VRRM
KA2s
t=8.3ms reapplied
t=10ms TJ=25oC,
t=8.3ms novoltage reapplied
I2√t
Max. I2√t for fusing (1)
159.1
0.80
0.85
2.37
2.25
KA2√s
t=0.1to10ms,no voltage reappl.,TJ=TJmax.
Low level (3)
VT(TO) Max. value of threshold
voltage (2)
V
TJ = TJ max
High level (4)
r
Max. value of on-state
slope resistance (2)
Low level (3)
t
mΩ
TJ = TJ max
High level (4)
VTM Max. peak on-state
voltage
ITM =π x IT(AV)
1.64
V
T
J = 25°C
IFM =π x IF(AV)
di/dt Max. non-repetitiverate
of rise of turned on
current
TJ = 25oC, from 0.67 VDRM
,
150
200
400
A/µs
ITM =π x I T(AV), I = 500mA,
g
t < 0.5 µs, t > 6 µs
p
r
IH
Max. holding current
TJ =25oC,anodesupply=6V,
resistiveload, gateopencircuit
mA
IL
Max. latchingcurrent
TJ=25oC,anodesupply=6V,resistiveload
2
(1) I2t for time t = I2√t x √t .
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))
(4) I > π x IAV
x
x
(3) 16.7% x π x IAV < I < π x IAV
2
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
Triggering
Parameters
IRK.U/V105
12
Units
Conditions
PGM Max. peakgatepower
W
A
PG(AV) Max. averagegatepower
3
3
IGM
Max.peakgatecurrent
-VGM Max.peaknegativegatevoltage
10
VGT Max.gatevoltage
requiredtotrigger
4.0
2.5
V
TJ=-40°C
TJ=25°C
Anodesupply=6V
resistive load
1.7
270
150
80
TJ=125°C
TJ=-40°C
TJ=25°C
IGT
Max. gatecurrent
requiredtotrigger
Anodesupply=6V
resistive load
mA
TJ =125°C
TJ =125oC,
rated VDRM applied
TJ =125oC,
rated VDRM applied
VGD Max.gatevoltage
thatwillnottrigger
0.25
6
V
IGD
Max. gatecurrent
thatwillnottrigger
mA
Blocking
Parameters
IRKU/V105
20
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 130oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 130oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16S90.
Thermal and Mechanical Specifications
Parameters
IRKU/V105
Units
°C
Conditions
TJ
T
Junctionoperatingtemperature
range
- 40 to 130
Storagetemperature range
-40to125
0.135
stg
RthJC Max.internalthermalresistance,
Per module, DC operation
junctiontocase
RthCS Typicalthermalresistance
casetoheatsink
K/W
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
0.1
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mountingtorque± 10%
toheatsink
busbar
Approximateweight
Casestyle
5
3
Nm
wt
83 (3)
g (oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.04
120o
90o
60o
30o
180o
0.03
120o
90o
60o
30o
IRKU/V105
0.05
0.06
0.08
0.12
0.05
0.06
0.08
0.12
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3
IRKU/V105 Series
Bulletin I27136 rev. B 09/97
Outlines Table
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
IRKU105/.. (*)
IRKV105/.. (*)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
6.3 ± 0.3
(0.25 ± 0.01)
All dimensions in millimeters (inches)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
(*) For terminals connections, see Circuit Configurations Table
Circuit Configurations Table
IRKU
IRKV
(1)
(1)
-
+
+
(2)
-
(2)
-
(3)
+
(3)
K1
G1
(4) (5)
K2
G2
(7) (6)
G1 K1
(4) (5)
K2 G2
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
Ordering Information Table
Device Code
IRK
U
105
/
16 S90
3
4
5
1
2
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration Table)
Current code
Voltage code (See Voltage Ratings Table)
dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
130
120
110
100
90
130
IRK.105.. Se rie s
(DC ) = 0.27 K/ W
IRK.105.. Se rie s
R
R
(DC) = 0.27 K/ W
th JC
thJC
120
110
100
90
C o nd u ctio n Ang le
C ond uctio n Pe rio d
30°
30°
60°
60°
90°
90°
80
80
120°
180°
120°
DC
180°
70
70
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e On -sta te Curre n t (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
140
120
100
80
200
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
C ond uc tio n Pe rio d
60
Co nd uc tio n Ang le
60
40
IRK.105.. Se rie s
Pe r Jun c tio n
IRK.105.. Se rie s
Pe r Junc tio n
40
20
T
= 130°C
20
J
T
= 130°C
J
0
0
0
20
Avera g e O n-sta te Curre n t (A)
Fig. 3 - On-state Power Loss Characteristics
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e On-sta te C urre n t (A)
Fig. 4 - On-state Power Loss Characteristics
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5
IRKU/V105 Series
Bulletin I27136 rev. B 09/97
1600
1800
1600
1400
1200
1000
800
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Co ntrol
Of C ond uc tion Ma y Not Be Ma inta ine d.
At Any Ra te d Loa d Cond itio n And With
Ra te d V
RRM
Ap p lie d Following Surg e .
1500
1400
1300
1200
1100
1000
900
Initia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.105.. Se rie s
Pe r Jun c tio n
IRK.105.. Se rie s
Per Jun ct io n
800
700
600
1
10
100
0.01
0.1
1
Numb er O f Eq ua l Amp litud e Ha lf C ycle Curren t Pu lses (N)
Pulse Tra in Dura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
600
t
h
S
180°
A
500
400
300
200
100
0
(Sine )
180°
(Re c t)
0
.
2
K
/
W
0
.
3
K
/
W
0
.
5
K
/
W
0
.
7
K
/
W
2 x IRK.105.. Se rie s
Sin g le Ph a se Brid g e
C o n ne c te d
1
K
/
W
2
K/
W
T
= 130°C
J
0
40
80
120
160
20 20
40
60
80
100 120 140
To ta l Outp ut C urre n t (A)
Ma ximum Allo wa b le Am b ie n t Te mp e ra ture (°C )
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
900
800
700
600
500
400
300
200
100
0
t
h
S
A
60°
(Re c t)
I
o
0
.
2
K
/
W
0
.
3
K
/
W
W
0
1
.
5
K
/
3 x IRK.105.. Se rie s
6-Pulse Mid p o in t
C o nn e c tio n Brid g e
K
/
W
T
= 130°C
J
0
50 100 150 200 250 300 350 400 450
20
40
60
80
100 120 140
To ta l Outp ut C urre nt (A)
Ma xim um Allo w a b le Am b ie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
6
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
1000
100
10
T = 25°C
J
T = 130°C
J
IRK.105.. Se rie s
Per Junc tio n
1
0
0.5
1
1.5
2
2.5
3
3.5
In sta nta ne o us O n-sta te Vo lta g e (V)
Fig. 9 - On-state Voltage Drop Characteristics
700
600
500
400
300
200
100
140
I
= 200 A
100 A
TM
IRK.105.. Se rie s
T = 125 °C
I
= 200 A
100 A
IRK.105.. Se rie s
TM
T = 125 °C
120
100
80
J
J
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll O f On-sta te C urre nt - d i/ d t (A/µs)
Ra te O f Fa ll Of Fo rwa rd C urre nt - d i/d t (A/ µs)
Fig. 10 - Recovery Charge Characteristics
Fig. 11 - Recovery Current Characteristics
1
Ste a d y Sta te Va lue :
R
= 0.27 K/ W
thJC
(DC Op e ra tio n)
0.1
IRK.105.. Se rie s
Pe r Junc tion
0.01
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 12 - Thermal Impedance ZthJC Characteristics
7
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IRKU/V105 Series
Bulletin I27136 rev. B 09/97
100
Re c ta ng ula r ga te pulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a )Re c om me nde d loa d line fo r
ra te d d i/ d t: 20 V, 20 o hm s
tr = 0.5 µs, tp >= 6 µs
b)Re c om me nde d loa d line fo r
<= 30% ra te d di/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
10
(a )
(b )
1
(3)
(4)
(2)
(1)
VG D
IG D
0.01
IRK.105.. Se rie s
Fre q ue nc y Lim ite d b y PG(AV)
10 100 1000
0.1
0.001
0.1
1
Insta nta ne o us Ga te C urre nt (A)
Fig. 13- Gate Characteristics
8
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