IRKU105/8AS90PBF [INFINEON]
Silicon Controlled Rectifier, 165A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7;
| 型号： | IRKU105/8AS90PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 165A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA, ADD-A-PAK-7 |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27136 rev. D 02/02
IRKU/V105 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
Full compatible TO-240AA
High Surge capability
105 A
Easy Mounting on heatsink
Al203 DBC insulator
UL E78996 approved
3500VRMS isolating voltage
Heatsink grounded
Mechanical Description
The electrical terminals are secured against axial pull-
out: they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, temperature and motor
speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IT(AV)@85°C
IT(RMS)
IRKU/V105
Units
105
A
A
A
A
165
ITSM @50Hz
@60Hz
1785
1870
2
2
I t @50Hz
15.91
KA s
2
@60Hz
14.52
KA s
2
2
I √t
159.1
KA √s
VRRM range
TSTG
400to1600
- 40 to 125
- 40 to130
V
oC
oC
TJ
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1
IRKU/V105 Series
Bulletin I27136 rev. D 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
Voltage
IDRM
Type number
Code
peak reverse voltage peak reverse voltage
130°C
-
V
V
V
mA
04
400
500
400
IRKU/V105
08
12
16
800
900
800
20
1200
1600
1300
1700
1200
1600
On-state Conduction
Parameters
IRKU/V105
105
Units
Conditions
180o conduction, half sine wave,
TC=85oC
IT(AV) Max. average on-state
current
A
IT(RMS Max. RMS on-state
DC
165
77
)
current.
@TC
°C
ITSM Max. peak, one cycle
non-repetitive on-state
current
1785
1870
1500
1570
2000
2100
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ=TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
A
t=8.3ms no voltage reapplied
I2t
Max. I2t for fusing
15.91
14.52
11.25
10.27
20.00
18.30
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
InitialTJ =TJ max.
KA2s
t=8.3ms no voltage reapplied
I2√t
Max. I2√t for fusing (1)
159.1
0.80
0.85
2.37
2.25
KA2√s
t=0.1to10ms,no voltage reappl.,TJ=TJ max.
Low level (3)
High level (4)
VT(TO) Max. value of threshold
voltage (2)
V
TJ = TJ max
r
Max. value of on-state
slope resistance (2)
Low level (3)
TJ = TJ max
High level (4)
t
mΩ
VTM Max. peak on-state
ITM=π xIT(AV)
TJ = 25°C
1.64
V
voltage
IFM=π xIF(AV)
di/dt Max. non-repetitive rate
of rise of turned on
current
TJ = 25oC, from 0.67 VDRM
TM =π x IT(AV), I = 500mA,
,
150
200
400
A/µs
I
g
t < 0.5 µs, t > 6 µs
p
r
IH
Max. holding current
TJ =25oC,anodesupply=6V,
resistive load, gate open circuit
TJ =25oC, anodesupply=6V,resistiveload
mA
IL
Max. latching current
2
(1) I2t for time t = I2√t x √t .
(3) 16.7% x π x IAV < I < π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))
x
x
(4) I > π x IAV
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2
IRKU/V105 Series
Bulletin I27136 rev. D 02/02
Triggering
Parameters
IRK.U/V105
Units
Conditions
PGM Max.peakgatepower
12
3
W
A
PG(AV) Max.averagegatepower
IGM
Max.peakgatecurrent
3
-VGM Max. peaknegativegatevoltage
10
VGT Max.gatevoltage
required to trigger
4.0
2.5
1.7
270
150
80
V
TJ =-40°C
TJ =25°C
TJ =125°C
TJ =-40°C
TJ =25°C
Anodesupply=6V
resistive load
IGT
Max.gatecurrent
required to trigger
Anodesupply=6V
resistive load
mA
TJ =125°C
TJ =125oC,
VGD Max.gatevoltage
thatwillnottrigger
0.25
6
V
ratedVDRMapplied
IGD
Max.gatecurrent
that will not trigger
TJ =125oC,
ratedVDRMapplied
mA
Blocking
Parameters
IRKU/V105
20
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 130oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 130oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16AS90.
Thermal and Mechanical Specifications
Parameters
IRKU/V105
Units
°C
Conditions
TJ
Junction operating temperature
range
Storage temperature range
- 40 to 130
T
-40to125
0.135
stg
RthJC Max. internalthermalresistance,
junctiontocase
RthCS Typical thermal resistance
case to heatsink
Per module, DC operation
K/W
Mounting surface flat, smooth and greased
0.1
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mounting torque ± 10%
to heatsink
busbar
Approximateweight
Casestyle
5
3
Nm
wt
110(4)
g(oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.04
120o
0.05
90o
60o
30o
180o
0.03
120o
0.05
90o
60o
30o
IRKU/V105
0.06
0.08
0.12
0.06
0.08
0.12
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3
IRKU/V105 Series
Bulletin I27136 rev. D 02/02
Ordering Information Table
Device Code
IRK.106 types
IRK
U
105
/
16
A
S90
With no auxiliary cathode
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
Voltage code (See Voltage Ratings table)
A : Gen V
* * Available with no auxiliary cathode.
To specify change:
105 to 106
e.g. : IRKU106/16A etc.
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKU
IRKV
(1)
(1)
-
+
+
-
(2)
(2)
+
-
(3)
(3)
G1
K1
K2 G2
(7) (6)
K1
K2
G1
G2
(4) (5)
(7) (6)
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRKU/V105 Series
Bulletin I27136 rev. D 02/02
130
120
110
100
90
130
120
110
100
90
IRK.105.. Series
IRK.105.. Series
R
(DC) = 0.27 K/W
R
(D C) = 0.27 K/W
thJC
thJC
Conduction Angle
Conduction Period
30
40
30
60
60
60
90
90
80
80
120
120
180
DC
180
70
70
0
20
80
100
120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
140
120
100
80
200
180
160
140
120
100
80
180
120
90
60
30
DC
180
120
90
60
30
RMS Lim it
RMS Lim it
Conduction Period
60
Conduction Angle
60
40
IRK.105.. Series
Per Junction
IRK.105.. Series
Per Junction
40
20
T
= 130 C
20
J
T
= 130
C
J
0
0
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
Versus Pulse Train D uration. Control
Of Conduction May Not Be M aintained.
At Any Rated Load Condition And W ith
Rated V
Applied Following Surge.
RRM
Initial T = 130
C
J
Initial T = 130
C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V Reapplied
RRM
IRK.105.. Series
Per Junction
IRK.105.. Series
Per Junction
800
700
600
0.01
1
10
100
0.1
Pulse Train Duration (s)
1
Num ber O f Equal Am plitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRKU/V105 Series
Bulletin I27136 rev. D 02/02
600
500
400
300
200
100
0
R
180
(Sine)
180
=
0
.
1
K
/
W
-
(Rect)
0
D
e
.
2
K
l
t
a
/
W
R
0
.
5
K
/
W
0
.
7
K
/
W
2 x IRK.105.. Series
Single Phase Bridge
Connected
1
K
/
W
T
= 130 C
J
0
40
80
120
160
200
20
40
60
80
100 120 140
Total Output Current (A)
M axim um Allow able Am bient Tem perature ( C)
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
900
800
700
600
500
400
300
200
100
0
60
(Rect)
I
o
0
.
2
K
/
W
3 x IRK.105.. Series
6-Pulse Midpoint
Con nection Bridge
1
K
/
W
T
= 130 C
J
0
50 100 150 200 250 300 350 400 450
20
40
60
80
100 120 140
M axim um Allow able Am bient Tem perature ( C)
Total O utput Current (A)
Fig. 8 - On-state Power Loss Characteristics
1000
100
10
T
T
= 25 C
J
J
= 130
C
IRK.105.. Series
Per Junction
1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
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6
IRKU/V105 Series
Bulletin I27136 rev. D 02/02
700
600
500
400
300
200
100
140
120
100
80
I
= 200 A
100 A
TM
IRK.105.. Series
= 125
I
= 200 A
100 A
IRK.105.. Series
= 125
TM
T
J
C
T
C
J
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of O n-state Current - di/dt (A/ s)
Rate O f Fall Of Forw ard Curren t - di/dt (A/ s)
Fig. 10 - Recovery Charge Characteristics
Fig. 11 - Recovery Current Characteristics
1
Steady State Value:
R
= 0.27 K/W
thJC
(DC Operation)
0.1
IRK.105.. Series
Per Junction
0.01
0.001
0.01
0.1
1
10
Square W ave Pulse Duration (s)
Fig. 12 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
a)Recom m ended load line for
rated di/dt: 20 V, 20 ohm s
(1) PGM = 200 W , tp = 300
(2) PGM = 60 W , tp = 1 m s
(3) PGM = 30 W , tp = 2 m s
(4) PGM = 12 W , tp = 5 m s
s
tr = 0.5 s, tp >=
6
s
b)Recom m ended load line for
<= 30% rated di/dt: 15 V, 40 ohm s
tr =
1
s, tp >=
6
s
(a)
(b)
(3)
(4)
(2)
(1)
VGD
IGD
0.01
Frequency Lim ited by PG(AV)
10 100 1000
IRK.105.. Series
0.1
0.1
0.001
1
Instantaneous Gate Current (A)
Fig. 13- Gate Characteristics
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7
IRKU/V105 Series
Bulletin I27136 rev. D 02/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/02
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8
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