IRKUF180-04HK [INFINEON]
Silicon Controlled Rectifier, 282.6A I(T)RMS, 180000mA I(T), 400V V(DRM), 400V V(RRM), 2 Element;
| 型号： | IRKUF180-04HK |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 282.6A I(T)RMS, 180000mA I(T), 400V V(DRM), 400V V(RRM), 2 Element 局域网 栅 栅极 |
| 文件： | 总8页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27100 rev. C 03/01
IRK.F180.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
MAGN-A-pak Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
180 A
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of MAGN-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are
required.
Major Ratings and Characteristics
Parameters
IRK.F180..
Units
IT(AV)
180
A
°C
A
@ TC
85
IT(RMS)
ITSM
400
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
7130
A
7470
A
2
2
I t
255
KA s
2
232
KA s
2
2
I √t
2550
KA √s
t
20 and 25
2
µs
µs
V
q
t
rr
VDRM /VRRM
upto1200
- 40 to 125
TJ
range
oC
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1
IRK.F180.. Series
Bulletin I27100 rev. C 03/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
@ TJ = 125°C
mA
Type number
IRK.F180-
peak reverse voltage
repetitive peak rev. voltage
V
V
08
12
800
1200
800
1200
50
Current Carrying Capacity
ITM
ITM
ITM
Frequency f
Units
180oel
180oel
100µs
50Hz
370
530
650
430
345
270
50
565
670
490
390
290
50
800
1000
720
540
390
50
2400
1540
610
390
-
3150
2050
830
540
-
A
A
400Hz
435
290
240
170
50
2500Hz
A
5000Hz
A
10000Hz
A
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
50
50
V
80%VDRM
80%VDRM
80%VDRM
V
50
85
50
60
-
-
-
-
A/µs
°C
85
60
85
60
10Ω/0.47µF
10Ω/0.47µF
10Ω/0.47µF
On-state Conduction
Parameter
IRK.F180..
Units Conditions
IT(AV)
Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS current
180
85
A
°C
A
180° conduction, half sine wave
400
as AC switch
ITSM
Maximum peak, one-cycle,
non-repetitive surge current
7130
7470
6000
6280
255
A
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = 125°C
t = 8.3ms reapplied
232
180
t = 10ms 100% VRRM
164
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
2550
1.30
1.38
KA2√s t = 0 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
0.90
0.71
1.84
600
mW (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
t2
VTM
IH
V
Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse
mA TJ = 25°C, IT > 30 A
IL
Typical latching current
1000
mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
Switching
Parameter
IRK.F180..
800
Units Conditions
di/dt
Maximum non-repetitive rate of rise
A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
TJ = 25°C
t
Maximum recovery time
Maximum turn-off time
2
µs
µs
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 750A, TJ = 125°C, di/dt = -25A/µs,
rr
t
K
J
q
20
25
VR = 50V, dv/dt = 400V/µs linear to 80% VDRM
Blocking
Parameter
IRK.F180..
1000
Units Conditions
dv/dt
Maximum critical rate of rise of off-state
voltage
V/µs
TJ = 125°C., exponential to = 67% VDRM
VINS
IRRM
IDRM
RMS isolation voltage
3000
50
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum peak average gate power
IGM Maximum peak positive gate current
- VGM Maximum peak negative gate voltage
IRK.F180..
Units Conditions
PGM
60
10
10
5
W
W
A
f = 50 Hz, d% = 50
TJ = 125°C, f = 50Hz, d% = 50
T = 125°C, t < 5ms
p
J
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
3
mA TJ = 25°C, Vak 12V, Ra = 6
VGT
IGD
VGD
V
20
mA TJ = 125°C, rated VDRM applied
V
DC gate voltage not to trigger
0.25
Thermal and Mechanical Specifications
Parameter
IRK.F180..
- 40 to 125
- 40 to 150
0.125
Units Conditions
°C
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
0.02
K/W Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
Nm
T
Mounting torque ± 10% MAP to heatsink 4 - 6 (35 - 53)
busbar to MAP
should be rechecked after a period of 3 hoursto allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
4 - 6 (35 - 53) (lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
lubricatedwithacompound
3
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.009
0.010
0.014
0.020
0.032
0.006
0.011
0.015
0.020
0.033
K/W
TJ = 125°C
60°
30°
Ordering Information Table
Device Code
IRK
T
F
180
-
12
H
K
1
2
3
4
5
6
7
1
2
3
4
5
6
7
- Module type
-
-
-
-
-
-
Circuit configuration
Fast SCR
Current rating: IT(AV) x 10 rounded
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
dv/dt code: H ≤ 400V/µs
tq code: K ≤ 20µs
J ≤ 25µs
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensions are nominal
Full engineering drawings are available
on request
-
-
UL identification number for gate
and cathode wire: UL 1385
UL identification number for package:
UL 94V0
IRKHF..
IRKLF..
IRKVF..
IRKTF..
IRKUF..
IRKKF..
IRKNF..
130
120
110
100
90
130
120
110
100
90
IRK.F180.. Series
IRK.F180.. Series
R
(DC) = 0.125 K/W
R
(DC ) = 0.125 K/W
thJC
thJC
Conduction Angle
Conduction Pe riod
30
30
60
80
60
80
90
90
120
120
70
70
180
180
200
DC
250
60
60
0
40
80
120
160
200
0
50
100
150
300
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
350
450
400
350
300
250
200
150
100
50
180
120
90
60
30
DC
180
120
90
60
300
250
30
200
RMS Limit
150
RM S Lim it
Conduction Pe riod
Conduction Angle
100
50
0
IRK.F180.. Series
Per Junction
IRK.F180.. Series
Per Junction
T
= 125 C
T
= 125 C
J
J
0
0
20 40 60 80 100 120 140 160 180
Average O n-state Current (A)
0
50
100
150
200
250
300
Average O n-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
6500
6000
5500
5000
4500
4000
3500
3000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
At A ny Rated Load Condition A nd W ith
Ma xim um Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surg e.
RRM
Initial T = 125
C
J
Initial T = 125
C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V Reapplied
RRM
IRK.F180.. Series
Per Junction
IRK.F180.. Series
Per Junction
1
10
100
0.01
0.1
Pulse Train D uration (s)
1
Nu m b er Of E qu a l Am plitude Half C ycle C urrent Pu lse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1
Steady State Value:
= 0.125 K/W
R
thJC
(DC Operation)
0.1
0.01
1000
T
T
= 25 C
J
J
= 125
C
IRK.F180.. Series
Per Junction
IRK.F180.. Series
Per Junction
100
0.001
0.001
0.01
0.1
1
10
100
1
2
3
4
5
6
7
Instantaneous O n-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 7 - On-state Voltage Drop Characteristics
6
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
320
300
280
260
240
220
200
180
160
140
120
100
80
180
160
140
120
100
80
I
= 1000A
500A
300A
200A
100A
I
= 1000 A
500 A
300 A
200 A
100 A
TM
TM
60
IRK.F180.. Series
= 125
IRK.F180.. Series
= 125
T
C
40
J
T
C
J
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forw ard Current - di/dt (A/ s)
Rate Of Fall Of Forw ard Current - di/dt (A/ s)
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
1E1
50 Hz
150
50 H z
150
400
1000
2500
400
1000
2500
5 00 0
5 00 0
Snubber circuit
IRK.F180.. Series
Snubber circuit
IRK.F180.. Series
R
C
V
= 10 ohms
= 0.47
s
s
R
C
V
= 10 ohm s
= 0.47
s
s
Sinusoida l pulse
= 85
Sinusoidal pulse
F
F
T
C
tp
T C= 60
C
C
= 80% V
DRM
D
tp
= 80% V
D
DRM
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth ( s)
Pulse Basewidth ( s)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
1E1
50 Hz
50 Hz
150
150
400
400
1 00 0
1 00 0
2500
2500
5000
5 00 0
Snubber circuit
= 10 ohms
= 0.47
Snubber circuit
= 10 ohms
IRK.F180.. Series
IRK.F180.. Series
Trapezoid al pulse
= 85 C di/dt 50A/
R
C
V
s
s
R
C
V
s
s
Trapezoidal pulse
= 85 C di/dt 100A/
F
= 0.47
= 80% V
F
T
s
T
s
tp
tp
C
C
= 80% V
D
DRM
D
DRM
1E4
1E1
1E1
1E2
1E3
E
1E2
1E3
1E4
Pulse Basewidth ( s)
Pulse Basewidth ( s)
Fig. 12 - Frequency Characteristics
7
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
1E4
50 H z
50 Hz
150
150
400
400
1E3
1000
1 00 0
2500
2500
5000
5000
1E2
1E1
Snubber circuit
Snubber circuit
IRK.F180.. Series
Trapezoidal pulse
IRK.F180.. Series
R
C
V
= 10 ohms
R
C
V
= 10 ohm s
s
s
s
s
Trapezoidal pulse
= 0.47
F
= 0.47
F
T
= 60 C di/dt 100A/
s
T
= 60 C di/dt 50A/
s
tp
C
tp
C
= 80% V
= 80% V
DRM
D
D
DRM
1E4
1E1
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth ( s)
Pulse Basewidth ( s)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
1E1
10 joules per pulse
5
10 joules per pulse
2.5
5
1
2.5
0.5
1
0.25
0.5
0.1
0.05
0.25
0.1
0.05
IRK.F180.. Series
Trapezoidal pulse
IRK.F180.. Series
Sinusoidal pulse
tp
di/dt 50A/
s
tp
1E4
1E1
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth ( s)
Pulse Basewidth ( s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Rectangular gate pulse
a) Recom mended load line for
rated di/dt : 10V, 10ohm s
b) Recomm ended load line for
<=30% rated di/dt : 10V, 20ohm s
(1) PGM = 8W , tp = 25ms
(2) PGM = 20W , tp = 1ms
(3) PGM = 40W , tp = 5ms
(4) PGM = 80W, tp = 2.5m s
(a )
(b)
(1)
(2)
(4)
(3)
VGD
IGD
IRK.F180.. Series
1
Frequency Lim ited by PG(AV)
10 100
0.1
0.01
0.1
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
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