IRKV71/04S90 [INFINEON]
Silicon Controlled Rectifier, 115A I(T)RMS, 70000mA I(T), 400V V(DRM), 400V V(RRM), 2 Element, TO-240AA;
| 型号： | IRKV71/04S90 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 115A I(T)RMS, 70000mA I(T), 400V V(DRM), 400V V(RRM), 2 Element, TO-240AA 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27135 rev.C 09/97
IRKU/V71, 91 SERIES
NEWADD-A-pakTM Power Modules
THYRISTOR/ THYRISTOR
Features
75 A
95 A
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
These IRKU/V series of NEW ADD-A-paks use
power thyristors in two circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase bridges
(IRKU+IRKV) or 6-pulse midpoint connection
bridge. These modules are intended for general
purpose high voltage applications such as high
voltage regulated power supplies, battery charge
and DC motor speed control circuits.
Major Ratings and Characteristics
Parameters IRKU/V71 IRKU/V91 Units
IT(AV) @ 85°C
IT(RMS)
75
95
A
A
115
150
ITSM @ 50Hz
@ 60Hz
1665
1740
13.86
12.56
1785
1870
15.91
14.52
A
A
2
2
I t @ 50Hz
KA s
2
@ 60Hz
KA s
2
2
I √t
138.6
159.1
KA √s
VRRM range
400 to 1600
V
TSTG
TJ
- 40 to 125
- 40 to125
oC
oC
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1
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive IRRM
peak off-state voltage, IDRM
Voltage
Type number
Code
gate open circuit
125°C
-
V
V
V
mA
04
400
800
1200
1600
500
900
1300
1700
400
800
08
IRKU/V71, 91
15
12
16
1200
1600
On-state Conduction
Parameters
IRKU/V71
IRKU/V91
Units
Conditions
IT(AV) Max. average on-state
current
75
95
180o conduction, half sine wave,
TC =85oC
A
IT(RMS) Max. RMS on-state
115
150
DC
current
@TC
80
75
°C
ITSM
Max. peak, one cycle
non-repetitive on-state
current
1665
1740
1400
1470
1850
1940
13.86
12.56
9.80
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
t=10ms No voltage
Sinusoidal
half wave,
Initial TJ = TJ max.
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
t=10ms TJ = 25oC,
A
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
Initial TJ = TJ max.
t=10ms 100% VRRM
KA2s
8.96
t=8.3ms reapplied
t=10ms TJ = 25oC,
17.11
15.60
138.6
0.82
0.85
3.00
2.90
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max. value of threshold
voltage (2)
Low level (3)
High level (4)
Low level (3)
High level (4)
ITM= π x IT(AV)
TJ = TJ max
V
0.85
r
Max. value of on-state
slope resistance (2)
Max. peak on-state
2.40
TJ = TJ max
TJ =25oC
t
mΩ
2.25
VTM
1.59
1.58
V
voltage
IFM= π x IF(AV)
di/dt Max. non-repetitive rate
of rise of turned on
TJ = 25oC, from 0.67 VDRM
TM =π x I T(AV), I = 500mA,
,
I
g
150
A/µs
mA
current
t < 0.5 µs, t > 6 µs
r p
TJ = 25oC, anode supply = 6V,
IH
IL
Max. holding current
Max. latching current
200
400
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V,resistive load
2
(1) I2t for time t = I2√t x √t .
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))
(4) I > π x IAV
x
x
(3) 16.7% x π x IAV < I < π x IAV
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2
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
Triggering
Parameters
PGM Max. peak gate power
G(AV) Max. average gate power
IGM Max. peak gate current
IRKU/V71
IRKU/V91
Units
Conditions
12
3.0
3.0
12
3.0
3.0
W
A
P
-VGM Max. peak negative
gate voltage
10
4.0
2.5
1.7
TJ=-40°C
TJ= 25°C
TJ= 125°C
V
VGT Max. gate voltage
required to trigger
Anodesupply=6V
resistive load
270
150
80
TJ=-40°C
TJ= 25°C
TJ =125°C
IGT
Max. gate current
required to trigger
Anodesupply=6V
resistive load
mA
TJ= 125oC,
rated VDRM applied
TJ= 125oC,
rated VDRM applied
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRKU/V71, 91
15
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
Thermal and Mechanical Specifications
Parameters
IRK.71
IRK.91
0.135
Units
°C
Conditions
TJ
T
Junction operating
temperature range
Storage temper. range
- 40 to 125
- 40 to 125
stg
RthJC Max. internal thermal
resistance, junction
to case
0.165
Per module, DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mountingsurfaceflat,smoothandgreased.
Flatness<0.03mm;roughness< 0.02mm
0.1
5
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
T
Mounting torque ± 10%
to heatsink
Nm
busbar
3
wt
Approximate weight
83 (3)
g (oz)
Case style
TO-240AA
JEDEC
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU91/16S90.
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3
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.06
0.04
120o
0.07
0.05
90o
60o
30o
180o
0.04
0.03
120o
0.08
0.05
90o
60o
30o
IRKU/V71
IRKU/V91
0.09
0.06
0.12
0.08
0.18
0.12
0.10
0.06
0.13
0.08
0.18
0.12
Outlines Table
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
IRKU../.. (*)
IRKV../.. (*)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
6.3 ± 0.3
(0.25 ± 0.01)
All dimensions in millimeters (inches)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
(*) For terminals connections, see Circuit Configurations Table
Circuit Configurations Table
IRKU
IRKV
(1)
(1)
-
+
+
(2)
-
(2)
-
(3)
+
(3)
K1
G1
(4) (5)
K2
G2
(7) (6)
G1K1
(4) (5)
K2 G2
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
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4
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
Ordering Information Table
Device Code
IRK
U
91
/
16 S90
3
4
5
1
2
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration Table)
Current code
Voltage code (See Voltage Ratings Table)
dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
130
130
120
110
100
90
IRK.71.. Se rie s
IRK.71.. Se rie s
R thJC (DC) = 0.33 K/W
R
(DC ) = 0.33 K/W
thJC
120
110
100
90
Cond uc tion Pe riod
Co nd uctio n Ang le
30°
30°
60°
60°
90°
120°
90°
80
80
180°
120°
DC
100
180°
70
70
0
20
40
60
80
120
0
10 20 30 40 50 60 70 80
Ave ra g e On -sta te C urre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
120
100
80
60
40
20
0
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
60
Co nduc tio n Pe riod
Co n d uc tion An g le
40
IRK.71.. Se rie s
Pe r Junc tion
IRK.71.. Se rie s
Pe r Junc tion
20
T
= 125°C
J
T
= 125°C
J
0
0
10 20 30 40 50 60 70 80
Ave ra g e O n-sta te Curre nt (A)
0
20
40
60
80
100
120
Ave ra g e On -sta te C urre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
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5
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
1800
1600
1400
1200
1000
800
1600
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tio n. C ontro l
Of C ond uc tion Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Co nd itio n And With
1500
1400
1300
1200
1100
1000
900
Ra te d V
RRM
Ap p lie d Following Surg e .
Initia l T = 125°C
J
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta ge Re a p plie d
Ra te d V
Re a p p lie d
RRM
IRK.71.. Se rie s
Pe r Junc tion
IRK.71.. Se rie s
Pe r Junc tio n
800
700
600
0.01
1
10
100
0.1
1
Nu m b e r Of Eq ua l Am p litu d e Ha lf C yc le C urre n t Pu lse s (N)
Pulse Tra in Dura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
600
180°
(Sine )
500
180°
(Re c t)
400
0
.
3
300
200
K
/
W
2 x IRK.71.. Se rie s
Single Pha se Bridg e
C o nne c te d
1
K
/
W
100
0
T
= 125°C
J
0
20 40 60 80 100 120 140 160 180
20
40
60
80
100 120 140
To ta l Outp ut Curre nt (A)
Ma ximum Allo wa b le Am b ie n t Te mp e ra ture (°C)
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
600
500
400
300
200
100
0
0
.
2
60°
(Re c t)
K
/
W
W
I
o
0
.
3
K
/
3 x IRK.71.. Se rie s
6-Pulse Mid p o int
C onne c tio n Bridg e
1
K
/
W
T
= 125°C
J
0
50
100
150
200
250
30
20
40
60
80 100 120 140
Tot a l O utp ut C urre nt (A)
Ma ximum Allo wa b le Amb ie nt Te m p e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
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6
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
130
120
110
100
90
130
120
110
100
90
IRK.91.. Se rie s
IRK.91.. Se rie s
R
(DC) = 0.27 K/ W
R
(DC ) = 0.27 K/W
thJC
thJC
Cond uc tion Ang le
C ond uc tion Pe riod
30°
30°
60°
60°
90°
120°
80
90°
120°
80
180°
DC
180°
70
70
0
20 40 60 80 100 120 140 160
Ave ra g e O n-sta te C urre n t (A)
0
20
40
60
80
100
Ave ra g e On -sta te C urre nt (A)
Fig. 9 - Current Ratings Characteristics
Fig. 10 - Current Ratings Characteristics
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
C o nd uc tio n Perio d
Cond uc tion Ang le
60
40
IRK.91.. Se rie s
Pe r Jun c tio n
IRK.91.. Se rie s
Pe r Ju nc tio n
40
20
20
T = 125°C
T = 125°C
J
J
0
0
0
20
40
60
80
100
0
20 40 60 80 100 120 140 160
Ave ra g e On-sta te C urre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 11 - On-state Power Loss Characteristics
Fig. 12 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
At Any Ra te d Loa d Cond itio n And With
Ma xim um Non Re pe titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Contro l
Of Co nd uc tio n Ma y Not Be Ma inta ine d .
Ra te d V
App lie d Follo wing Surg e .
RRM
Initia l T = 125°C
J
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
IRK.91.. Se rie s
Pe r Junc tio n
IRK.91.. Se rie s
Pe r Junc tion
800
700
600
0.01
1
10
100
0.1
1
Nu m b e r Of Eq u a l Am p litu d e Ha lf C yc le C u rre n t Pu lse s (N)
Pulse Tra in Dura tio n (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 13 - Maximum Non-Repetitive Surge Current
7
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IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
600
500
400
300
200
100
0
R
t
180°
(Sin e )
180°
h
S
A
=
0
.
1
K
(Re c t)
/
W
0
.
2
-
K
D
/
W
e
l
t
a
R
0
.
5
K
/
W
2 x IRK.91.. Se rie s
Single Pha se Bridg e
C onne c te d
2
K
/ W
T
= 125°C
J
0
40
80
120
160
200
20
40
60
80
100 120 140
To ta l O utp ut C urre n t (A)
Ma ximum Allo wa b le Amb ie nt Te m pe ra ture (°C )
Fig. 15 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
700
600
500
400
300
200
100
0
R
=
0
.
1
K
60°
(Re c t)
/
W
-
0
D
.
I
2
o
e
K
l
/
t
a
W
R
0
.
3
K
/
W
0
1
.
5
K
/
W
3 x IRK.91.. Se rie s
6-Pulse Mid p oint
C onne c tio n Bridg e
K
/
W
T
= 125°C
J
0
40 80 120 160 200 240 280 320 360 20
40
60
80
100 120 140
To ta l O utp ut C urre nt (A) Ma xim um Allo wa b le Am b ie nt Te m p era ture (°C )
Fig. 16 - On-state Power Loss Characteristics
1000
100
10
1000
100
10
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
IRK.71.. Se rie s
Pe r Junc tion
IRK.91.. Se rie s
Pe r Junc tio n
1
1
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
Insta nta n eo us O n-sta te Vo lta g e (V)
Insta nta n e ous O n-sta te Vo lta g e (V)
Fig. 17 - On-state Voltage Drop Characteristics
Fig. 18 - On-state Voltage Drop Characteristics
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8
IRKU/V71, 91 Series
Bulletin I27135 rev.C 09/97
700
600
500
400
300
200
100
140
120
100
80
IRK.71.. Se rie s
IRK.91.. Se rie s
I
= 200 A
100 A
TM
I
= 200 A
100 A
IRK.71.. Se rie s
IRK.91.. Se rie s
TM
T
= 125 °C
J
T
= 125 °C
J
50 A
50 A
20 A
10 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of O n-sta te C urre nt - d i/ dt (A/µs)
Ra te Of Fa ll O f Fo rwa rd Curre nt - d i/ d t (A/ µs)
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
1
Ste a d y Sta te Va lue :
R
R
= 0.33 K/ W
= 0.27 K/ W
thJC
thJC
(DC Op e ra tion)
IRK.71.. Se rie s
IRK.91.. Se rie s
0.1
Pe r Junc tion
0.01
0.001
0.01
0.1
Squa re Wa ve Pulse Dura tion (s)
1
10
Fig. 21 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a )Re c o m m e nd e d lo a d line fo r
ra te d d i/d t: 20 V, 20 o hm s
tr = 0.5 µs, tp >= 6 µs
b )Re c o m m e n d e d lo a d line fo r
<= 30% ra te d d i/d t: 15 V, 40 o hm s
tr = 1 µs, tp >= 6 µs
(a )
(b)
(4) (3) (2)
(1)
VG D
IG D
IRK.71../ .91.. Se rie s Fre q ue nc y Limite d b y PG(AV)
0.1 10 100
0.1
0.001
0.01
1
1000
Insta nta ne o us Ga te Curre nt (A)
Fig. 22 - Gate Characteristics
9
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