IRL2505PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRL2505PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95622
IRL2505PbF
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.008Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 104Aꢀ
S
Description
FifthGenerationHEXFETsfromInternationalRectifierutilize
advanced processing techniques to achieve extremely low
on-resistancepersiliconarea. Thisbenefit, combinedwith
thefastswitchingspeedandruggedizeddevicedesignthat
HEXFETPowerMOSFETsarewellknownfor,providesthe
designer with an extremelyefficient and reliable device for
use in a wide variety of applications.
The TO-220 is universally preferred for all commercial-
Industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
104ꢀ
74
A
360
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
500
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
54
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
mJ
V/ns
5.0
55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
0.75
–––
62
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Juction-to-Ambient
0.50
–––
°C/W
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1
8/3/04
IRL2505PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.035 V/°C Reference to 25°C, ID = 1mA
0.008
0.010
0.013
VGS = 10V, ID = 54A
GS = 5.0V, ID = 54A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS = 4.0V, ID = 45A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 54A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS(th)
gfs
Gate Threshold Voltage
1.0
59
2.0
V
S
Forward Transconductance
25
250
100
-100
130
25
67
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 54A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
VDD = 28V
12
RiseTime
160
ID = 54A
td(off)
tf
Turn-Off Delay Time
43
84
RG = 1.3Ω, VGS = 5.0V
RD = 0.50Ω, See Fig. 10
Between lead,
Fall
Time
LS
Internal Source Inductance
7.5
nH
pF
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
5000
1100
390
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
S
IS
104ꢀ
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
360
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.3
140 210
650 970
V
TJ = 25°C, IS = 54A, VGS = 0V
TJ = 25°C, IF = 54A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀ Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25Ω, IAS = 54A. (See Figure 12)
ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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IRL2505PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
10V
8.0V
6.0V
4.0V
3.0V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
T
= 175°C
J
J
1
1
0.1
A
A
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
90A
=
I
D
TJ = 25°C
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
V
=5V
GS
1
7.5A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
2.5
3.5
4.5
5.5
6.5
T , Junction Temperature ( C)
J
VGS , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRL2505PbF
15
12
9
10000
I
= 54A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
= 44V
= 28V
DS
= C
V
DS
= C + C
ds
gd
8000
6000
4000
2000
0
C
C
iss
6
oss
3
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
Single Pulse
C
J
V
= 0V
GS
A
1
A
100
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRL2505PbF
120
100
80
60
40
20
0
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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IRL2505PbF
1200
1000
800
600
400
200
0
I
D
L
TOP
22A
38A
BOTTOM 54A
V
DS
D.U.T.
R
+
-
G
V
DD
I
5.0V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
= 25V
50
DD
A
175
25
75
100
125
150
V
DD
Starting T , Junction Temperature (°C)
J
V
DS
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. Drain Current
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
Q
G
.3µF
5.0 V
+
V
DS
Q
D.U.T.
-
GS
GD
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRL2505PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14.ForN-ChannelHEXFETS
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IRL2505PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMBLED ON WW 19, 1997
IN T HE AS S E MBLY LINE "C"
INTERNATIONAL
RE CTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
AS SE MBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
8
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