IRL3202S [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRL3202S |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 9.1675B
IRL3202S
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
D
VDSS = 20V
RDS(on) = 0.016W
G
Description
ID = 48A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D 2 Pak
Absolute Maximum Ratings
Parameter
Max.
48
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 4.5Vꢀ
Continuous Drain Current, VGS @ 4.5Vꢀ
Pulsed Drain Current ꢀ
30
A
190
69
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.56
± 10
14
VGS
Gate-to-Source Voltage
VGSM
Gate-to-Source Voltage
V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energyꢀ
Avalanche Current
EAS
IAR
270
mJ
A
29
6.9
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
mJ
5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
1.8
40
Units
RqJC
RqJA
°C/W
11/18/97
IRL3202S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mAꢀ
––– ––– 0.019
––– ––– 0.016
0.70 ––– –––
VGS = 4.5V, ID = 29A
VGS = 7.0V, ID = 29A
VDS = VGS, ID = 250µA
VDS = 16V, ID = 29Aꢀ
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
RDS(on)
Static Drain-to-Source On-Resistance
W
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
28
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 43
––– ––– 12
––– ––– 13
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -10V
Qg
ID = 29A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = 16V
VGS = 4.5V, See Fig. 6 ꢀ
VDD = 10V
–––
9.8 –––
RiseTime
––– 100 –––
ID = 29A
td(off)
tf
Turn-Off Delay Time
FallTime
–––
–––
63 –––
82 –––
RG = 9.5W,VGS = 4.5V
RD = 0.3W, ꢀ
Between lead,
nH
pF
LS
Internal Source Inductance
––– 7.5 –––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2000 –––
––– 800 –––
––– 290 –––
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
48
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
––– ––– 190
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 68 100
––– 130 190
V
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 25°C, IF = 29A
ns
nC
Qrr
ton
di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
I £29A, di/dt £63A/µs, VDD £V(BR)DSS
,
SD
max. junction temperature.
TJ £150°C
Starting TJ = 25°C, L = 0.64mH
RG = 25W, IAS = 29A.
Pulse width £300µs; duty cycle £2%.
ꢀ Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL3202S
1000
100
10
1000
100
10
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 2.00V
2.0V
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
48A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
=4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2
3
4 5
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
IRL3202S
3500
15
12
9
V
= 0V,
f = 1MHz
gd , ds
I
D
=
29A
GS
C
= C + C
C
SHORTED
iss
gs
V
= 16V
DS
C
= C
gd
3000
2500
2000
1500
1000
500
rss
C
= C + C
ds
oss
gd
C
iss
6
C
oss
3
C
rss
0
0
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.2
1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
IRL3202S
600
500
400
300
200
100
0
50
40
30
20
10
0
I
D
TOP
13A
18A
BOTTOM 29A
25
50
T
75
100
125
°
150
25
50
75
100
125
150
°
, Case Temperature ( C)
Starting T , Junction Temperature( C)
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
CaseTemperature
Vs. DrainCurrent
10
D = 0.50
0.20
1
0.10
0.05
0.02
P
DM
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRL3202S
0.018
0.016
0.014
0.012
0.010
0.025
0.020
0.015
0.010
VGS = 4.5V
I
= 48A
D
VGS = 7.0V
A
0
10
20
30
40
50
60
0.0
2.0
4.0
6.0
8.0
I
, Drain Current (A)
D
V G S , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3202S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
1.32 (.052)
1.22 (.048)
M AX.
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMEND ED FOOTPRINT
11.43 (.450)
8.89 (.350)
LE AD ASSIGNM ENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENS IONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
DIM ENS IONIN G & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLIN G DIMENSION : INCH.
3 - SOURCE
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUD E BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIO NAL
RECTIFIER
LOGO
PART NUMB ER
F530S
9246
1M
DATE CODE
(YYW W )
9B
A SSEM BLY
YY
=
YEAR
= W EEK
LOT
CODE
W W
IRL3202S
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069 )
1.25 (.049 )
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
M IN .
30.40 (1.197)
M AX.
N O TES
:
1. C O M FO RM S TO EIA-418.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ETER .
3. D IM ENSIO N M EASUR ED
4. IN CLU D ES FLAN G E D ISTO R TIO N
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
@
O U TER ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/97
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