IRL3303 [INFINEON]
HEXFET POWER MOSFET; HEXFET功率MOSFET
| 型号： | IRL3303 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET |
| 文件： | 总8页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1322B
IRL3303
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.026Ω
G
l Fully Avalanche Rated
ID = 38A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levelstoapproximately50watts. Thelowthermalresistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
38
27
A
140
PD @TC = 25°C
Power Dissipation
68
W
W/°C
V
Linear Derating Factor
0.45
±16
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
130
mJ
IAR
20
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
6.8
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
Units
RθJC
RθCS
RθJA
2.2
––––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
8/25/97
IRL3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.026
––– ––– 0.040
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 17A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 20A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
12
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 26
––– ––– 8.8
––– ––– 15
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -16V
Qg
ID = 20A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
–––
7.4 –––
VDD = 15V
––– 200 –––
ID = 20A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
14 –––
36 –––
RG = 6.5Ω, VGS = 4.5V
RD = 0.7Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 870 –––
––– 340 –––
––– 170 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 38
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 140
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 72 110
––– 180 280
V
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 20A. (See Figure 12)
ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
IRL3303
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TO P
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOT TOM 2.5V
BOTTOM 2.5V
2.5V
1
1
2.5V
20µs PULSE W IDTH
TJ = 25°C
20µs PULSE W IDTH
T
= 175°C
J
0.1
0.1
A
A
0.1
1
10
100
0.1
1
10
100
VD S , Drain-to-Source Voltage (V)
VD S , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1 0 0 0
1 0 0
1 0
2. 0
1. 5
1. 0
0. 5
0. 0
I
= 34A
D
T
= 25°C
J
T
= 1 75 °C
J
1
V
= 15V
DS
V
= 10V
2 0µ s PU LSE W ID TH
GS
0. 1
A
1 0 A
2
3
4
5
6
7
8
9
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
TJ , Junction Temperature (°C)
VG S , Gate-to -Source Volta ge (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRL3303
1600
15
12
9
V
C
C
C
= 0V,
f = 1M Hz
I
= 20A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
d s
gd
ds
V
V
= 24V
= 15V
DS
DS
1400
rss
oss
gd
C
C
is s
1200
1000
800
600
400
200
0
o s s
6
C
rss
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
10µs
1 0 0
1 0
1
100 µs
T
= 175°C
J
T
= 25°C
J
1m s
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
S ingle Pulse
GS
A
1
A
0. 0
0. 5
1. 0
1. 5
2. 0
2. 5
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRL3303
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3303
300
250
200
150
100
50
L
I
D
V
DS
TOP
8.3A
14A
BOTTOM 20A
D.U.T.
R
+
-
G
V
DD
I
4.5 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
= 15V
50
D D
0
A
175
V
(BR)DSS
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
t
p
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
4.5 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL3303
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V *
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL3303
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
-
B
-
3.78 (.14 9)
3.54 (.13 9)
2 .87 ( .1 13 )
2 .62 ( .1 03 )
4 .69 ( .1 85 )
4 .20 ( .1 65 )
1 .3 2 (.0 52 )
1 .2 2 (.0 48 )
-
A
-
6.4 7 (.25 5)
6.1 0 (.24 0)
4
1 5.24 ( .6 0 0)
1 4.84 ( .5 8 4)
1.15 ( .0 4 5)
L E A D
A
S
S
IG N M E N T S
M IN
1
2
3
4
-
-
-
-
G A T E
1
2
3
D R A IN
U R C E
D R A IN
S
O
1 4.09 (.5 5 5)
1 3.47 (.5 3 0)
4.0 6 (.16 0)
3.5 5 (.14 0)
0 .93 ( .0 37 )
0 .69 ( .0 27 )
0.5 5 (.02 2)
0.4 6 (.01 8)
3X
3X
1 .4 0 (.05 5 )
1 .1 5 (.04 5 )
3 X
0 .3 6 (.01 4)
M
B
A
M
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
2 .54 ( .1 00 )
2X
N O T E
S :
1
2
D IM E N S IO N IN G
C O N T R O L LIN G
&
T O L E R A N C IN G
P
E R
A
N S
I
Y
14 .5 M , 1 98 2.
3
O
U T L IN E C O N F O R M S T O J E D E
C
O U T LIN E T O -2 20 -A
B .
D
IM E N S IO IN C H
N
:
4
H E A T S IN L E A D E A U R E M E N T S
K
&
M
S
D
O
N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
EXAM PL E : THIS IS AN IRF1 010
W ITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
L OT CODE 9 B1M
IRF 10 10
9246
9B
1 M
DATE CODE
(YYW W )
ASSEMBLY
LOT CODE
YY
=
YEAR
= W EEK
W W
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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