IRL3705NLPBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRL3705NLPBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总10页 (文件大小：294K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 95381

IRL3705NSPbF

^lLogic-Level Gate Drive

IRL3705NLPbF

l Advanced Process Technology

HEXFET^®Power MOSFET

l Surface Mount (IRL3705NS)

l Low-profilethrough-hole(IRL3705NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

l Fully Avalanche Rated

l Lead-Free

R_DS(on)= 0.01Ω

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

arewellknownfor, providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

I_D= 89A

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRL3705NL) is available for low-

profileapplications.

TO-262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

310

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

170

1.1

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 16

340

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

1.7

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.90

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

06/08/04

IRL3705NS/LPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient 0.056 V/°C Reference to 25°C, I_D= 1mAꢀ

0.010

0.012

0.018

V_GS= 10V, I_D= 46A

V_GS= 5.0V, I_D= 46A

V_GS= 4.0V, I_D= 39A

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 46Aꢀ

V_DS= 55V, V_GS= 0V

V_DS= 44V, V_GS= 0V, T_J= 150°C

V_GS= 16V

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

1.0

2.0

Forward Transconductance

250

100

-100

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -16V

Q_g

I_D= 46A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

nC V_DS= 44V

V_GS= 5.0V, See Fig. 6 and 13 ꢀ

V_DD= 28V

RiseTime

140

I_D= 46A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 1.8Ω, V_GS= 5.0V

R_D= 0.59Ω, See Fig. 10 ꢀ

Between lead,

L_S

Internal Source Inductance

7.5

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

3600

870

320

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5ꢀ

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFETsymbol

I_S

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

310

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

1.3

94 140

290 440

T_J= 25°C, I_S= 46A, V_GS= 0V

T_J= 25°C, I_F= 46A

Q_rr

t_on

di/dt = 100A/µs ꢀ

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Uses IRL3705N data and test conditions

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V_DD= 25V, starting T_J= 25°C, L = 320µH

R_G= 25Ω, I_AS= 46A. (See Figure 12)

Calculated continuous current based on maximum allowable

junction temperature; for recommended current-handling of the

package refer to Design Tip # 93-4

I_SD≤ 46A, di/dt ≤ 250A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

IRL3705NS/LPbF

1000

100

1000

100

VGS

15V

TOP

15V

TOP

12V

10V

8.0V

6.0V

4.0V

3.0V

10V

8.0V

6.0V

4.0V

3.0V

BOTTOM 2.5V

2.5V

20µs PULSE WIDTH

= 175°C

= 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 77A

T = 25°C

T_J= 175°C

V _DS= 25V

20µs PULSE WIDTH

= 10V

2.0

3.0

4.0

5.0

6.0

7.0

8.0

-60 -40 -20

20 40 60 80 100 120 140 160 180

V_GS, Gate-to-Source Voltage (V)

T , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs.Temperature

IRL3705NS/LPbF

6000

= 46A

= 0V,

f = 1MHz

iss

rss

oss

= C + C

SHORTED

= 44V

= 28V

= C

5000

4000

3000

2000

1000

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

120

140

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

1000

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10µs

100µs

T = 175°C

1ms

T = 25°C

10ms

= 25°C

= 175°C

Single Pulse

= 0V

100

0.4

0.8

1.2

1.6

2.0

2.4

2.8

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

ForwardVoltage

IRL3705NS/LPbF

100

R_D

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

V_DD

5.0V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case

IRL3705NS/LPbF

800

600

400

200

TOP

19A

33A

BOTTOM 46A

15V

DRIVER

D.U.T

10V

Ω

0.01

Fig 12a. Unclamped Inductive Test Circuit

= 25V

175

100

125

150

Starting T , Junction Temperature (°C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig12b. UnclampedInductiveWaveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

5.0 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRL3705NS/LPbF

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

P.W.

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig14.ForN-ChannelHEXFETS

IRL3705NS/LPbF

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information

T HIS IS AN IRF530S WITH

LOT CODE 8024

PART NUMBER

INT E RNAT IONAL

RECTIFIER

LOGO

ASS EMBLED ON WW 02, 2000

IN THE ASSEMBLYLINE "L"

F530S

DAT E CODE

YEAR 0 = 2000

WE EK 02

Note: "P" in ass embly line

pos i ti on indicates "L ea d-F ree"

ASSEMBLY

LOT CODE

LINE L

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

F530S

DAT E CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 0 = 2000

ASSEMBLY

LOT CODE

WEEK 02

A = ASSEMBLY SITE CODE

IRL3705NS/LPbF

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: THIS IS AN IRL3103L

LOT CODE 1789

PART NUMBER

INT ERNATIONAL

RECTIFIER

LOGO

ASS EMB LED ON WW 19, 1997

IN T HE AS SEMBLY LINE "C"

DATE CODE

YEAR 7 = 1997

WE EK 19

Note: "P" in assembly line

pos ition ind icates "Lead-F ree"

AS S EMBLY

LOT CODE

LINE C

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

YEAR 7 = 1997

AS S E MB LY

LOT CODE

WEE K 19

A = AS S E MB LY S IT E CODE

IRL3705NS/LPbF

D²Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 06/04

IRL3705NLPBF [INFINEON]

相关型号：

IRL3705NPBF

IRL3705NS

IRL3705NSL

IRL3705NSPBF

IRL3705NSTRL

IRL3705NSTRLPBF

IRL3705NSTRR

IRL3705NSTRRPBF

IRL3705S

IRL3705STRL

IRL3705STRR

IRL3705Z