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IRL60SC216 [INFINEON]

Infineon’s latest logic level 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.;
IRL60SC216
型号： IRL60SC216
厂家： Infineon    Infineon
描述：

Infineon’s latest logic level 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
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IRL60SC216  
MOSFET  
D²-PAKꢀ7pin  
StrongIRFETª  
Features  
•ꢀVeryꢀlowꢀRDS(on)  
•ꢀOptimizedꢀforꢀlogicꢀlevelꢀdrive  
•ꢀHighꢀcurrentꢀcarryingꢀcapability  
•ꢀ175°Cꢀoperatingꢀtemperature  
•ꢀOptimizedꢀforꢀbroadestꢀavailabilityꢀfromꢀdistributionꢀpartners  
Benefits  
•ꢀReducedꢀconductionꢀlosses  
•ꢀIncreasedꢀpowerꢀdensity  
•ꢀIncreasedꢀreliabilityꢀversusꢀ150°Cꢀratedꢀparts  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Drain  
tab  
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Gate  
Pin 1  
Source  
Pin 2-7  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
60  
V
RDS(on),typ  
1.2  
mΩ  
mΩ  
A
RDS(on),max  
ID(SiliconꢀLimited)  
QG(0V..10V)  
1.5  
324  
174  
nC  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IRL60SC216  
PG-TO263-7  
IRL60SC216  
-
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
324  
229  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current  
ID  
A
VGS=10ꢀV,ꢀTC=100ꢀ°C1)  
Pulsed drain current1)  
Avalanche energy, single pulse2)  
ID,pulse  
EAS  
-
-
-
-
1296  
531  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=100ꢀA,ꢀRGS=50ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
375  
2.4  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=62ꢀ°C/W3)  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
04)  
RthJC  
-
-
0.4  
°C/W -  
Thermal resistance, junction -Ambient,  
0
RthJA  
RthCS  
-
-
-
62  
-
°C/W -  
°C/W -  
Case-to-Sink, Flat Greased Surface  
0.5  
1) See Diagram 3 for more detailed information  
2) See Diagram 13 for more detailed information  
3) When mounted on 1″ square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to  
application note #AN-994:  
4)  
R
thJC  
is measured at TJ approximately 90°C.  
Final Data Sheet  
3
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
V(BR)DSS  
Unit Noteꢀ/ꢀTestꢀCondition  
VGS=0ꢀV,ꢀID=250ꢀuA  
mV/°CID=5ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C  
Min.  
Max.  
Drain-source breakdown voltage  
60  
-
V
Breakdown voltage temperature  
coefficient  
dV(BR)DSSꢀ/dTj -  
VGS(th) 1.0  
IDSS  
45  
-
-
Gate threshold voltage  
2.4  
V
VDS=VGS,ꢀID=250ꢀµA  
-
-
-
-
1
150  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
µA  
nA  
mΩ  
IGSS  
-
-
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.2  
1.4  
1.50  
1.8  
VGS=10ꢀV,ꢀID=100ꢀA  
VGS=4.5ꢀV,ꢀID=50ꢀA  
RDS(on)  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
-
2.0  
-
-
Ω
-
320  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
16000 -  
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
1100  
810  
-
-
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,  
RG,ext=2.7ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
66  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,  
RG,ext=2.7ꢀΩ  
149  
175  
90  
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,  
RG,ext=2.7ꢀΩ  
Turn-off delay time  
Fall time  
VDD=30ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,  
RG,ext=2.7ꢀΩ  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
4
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
43  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge2)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
Qg(th)  
Qgd  
26  
-
78  
-
Qsw  
95  
-
Gate charge total2)  
Qg  
174  
2.8  
96  
218  
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge2)  
Vplateau  
Qg(sync)  
Qoss  
-
-
-
nC  
nC  
58  
VDD=30ꢀV,ꢀVGS=0ꢀV  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
313  
1296  
1.2  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
-
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C  
VR=51ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=51ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time2)  
Reverse recovery charge2)  
40  
52  
ns  
nC  
Qrr  
-
1) See ″Gate charge waveforms″ for parameter definition  
2) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
400  
350  
350  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
single pulse  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
10 µs  
101  
103  
102  
101  
100  
10-1  
100 µs  
100  
10-1  
10-2  
10-3  
1 ms  
10 ms  
DC  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1296  
5.0  
2.8 V  
3 V  
3.8 V  
4.5 V  
5 V  
6 V  
1152  
4.5  
4.0  
1008  
864  
720  
576  
432  
288  
144  
0
10 V  
15 V  
3.5  
3 V  
3.0  
3.5 V  
4 V  
4.5 V  
2.5  
2.0  
1.5  
1.0  
0.5  
5 V  
7 V  
10 V  
0
1
2
3
4
5
0
300  
600  
900  
1200  
1500  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1296  
4.5  
1152  
1008  
864  
720  
576  
432  
288  
4.0  
3.5  
3.0  
2.5  
125 °C  
2.0  
1.5  
25 °C  
1.0  
144  
175 °C  
25 °C  
0
0.5  
0
1
2
3
4
5
2
4
6
8
10  
12  
14  
16  
18  
20  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.5  
4.0  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.0  
2500 µA  
250 µA  
1.0  
0.0  
-60  
-20  
20  
60  
100  
140  
180  
-75  
-25  
25  
75  
125  
175  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
25 °C  
175 °C  
103  
102  
101  
Ciss  
104  
Coss  
Crss  
103  
102  
0
12  
24  
36  
48  
60  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
14  
12 V  
30 V  
48 V  
12  
102  
101  
100  
10-1  
10  
8
25 °C  
100 °C  
6
150 °C  
4
2
0
10-1  
100  
101  
102  
103  
104  
0
50  
100 150 200 250 300 350 400 450  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=50ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
72  
70  
68  
66  
64  
62  
-75  
-25  
25  
75  
125  
175  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.2,ꢀꢀ2020-07-02  
StrongIRFETª  
IRL60SC216  
RevisionꢀHistory  
IRL60SC216  
Revision:ꢀ2020-07-02,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
1.0  
2.0  
2.1  
2.2  
Release of preliminary version  
Release of final version  
2018-11-29  
2018-12-04  
2019-05-08  
2020-07-02  
Rev. 1  
Update from IR MOSFET/StrongIRFETTM to StrongIRFETTM  
Trademarks  
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.2,ꢀꢀ2020-07-02  

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