IRL7486M [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRL7486M
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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中文：	中文翻译
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StrongIRFET™

IRL7486MTRPbF

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

 Battery powered circuits

V_DSS

40V

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

R_DS(on)typ.

1.0m

max

@ V_GS= 10V

1.25m

1.5m

R_DS(on)typ.

max

@ V_GS= 4.5V

2.0m

Benefits

 Optimized for Logic Level Drive

I_{D (Silicon Limited)}

209A

 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dv/dt and di/dt Capability

 Lead-Free, RoHS Compliant

DirectFET^®ISOMETRIC

Standard Pack

Form

Tape and Reel

Base part number

Package Type

Orderable Part Number

Quantity

DirectFET^®ME

IRL7486MPbF

4800

IRL7486MTRPbF

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

209

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

132

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

836

I_DM

104

P_D@T_C= 25°C

W/°C

0.83

Gate-to-Source Voltage

Operating Junction and

Storage Temperature Range

± 20

V_GS

T_J

-55 to + 150

°C

T_STG

Avalanche Characteristics

E_{AS (Thermally limited)}Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy Tested Value 

Avalanche Current 

E_{AS (Thermally limited)}

E_{AS (tested)}

I_AR

190

111

See Fig.15,16, 23a, 23b

E_AR

Repetitive Aval`anche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

–––

12.5

Max.

Units

Junction-to-Ambient 

R_JA

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Case 

Junction-to-PCB Mounted

–––

1.2

R_JA

°C/W

R_JA

R_JC

–––

0.75

–––

R_J-PCB

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min. Typ. Max. Units

Conditions

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

––– –––

V_GS= 0V, I_D= 250µA

–––

35 ––– mV/°C

Reference to 25°C, I_D= 1.0mA

V_GS= 10V, I_D= 123A 

V_GS= 4.5V, I_D= 62A 

V_DS= V_GS, I_D= 150µA

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 20V

V_(BR)DSS/T_J

R_DS(on)

––– 1.0 1.25

––– 1.5 2.0

1.0 1.8 2.5

m

V_GS(th)

Gate Threshold Voltage

––– ––– 1.0

––– ––– 150

––– ––– 100

––– ––– -100

––– 0.97 –––

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

V_GS= -20V

R_G



Notes:

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

TC measured with thermocouple mounted to top (Drain) of part.

Used double sided cooling , mounting pad with large heatsink.

Mounted to a PCB with small clip

heatsink (still air)

Mounted on minimum footprint full size

board with metalized back and with

small clip heatsink (still air)

Surface mounted on 1 in. square Cu

board (still air).

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

V_DS= 10V, I_D= 123A

I_D= 123A

gfs

Q_g

427 ––– –––

–––

111

–––

Q_gs

Q_gd

Q_sync

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

V_DS= 20V

V_GS= 4.5V 

I_D= 123A, V_DS=0V, V_GS= 10V

V_DD= 20V

Rise Time

––– 110 –––

I_D= 30A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

–––

R_G= 2.7

V_GS= 4.5V 

C_iss

C_oss

C_rss

Input Capacitance

––– 6904 –––

––– 939 –––

––– 607 –––

V_GS= 0V

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

ƒ = 1.0MHz

C_osseff. (ER) Effective Output Capacitance (Energy Related) ––– 1150 –––

V_GS= 0V, V_DS= 0V to 32V 

V_GS= 0V, V_DS= 0V to 32V 

C_osseff. (TR) Effective Output Capacitance (Time Related)

––– 1376 –––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

––– –––

104

836

showing the

integral reverse

I_SM

Pulsed Source Current

(Body Diode) 

Diode Forward Voltage

p-n junction diode.

V_SD

––– ––– 1.2

T_J= 25°C,I_S=123A, V_GS= 0V

dv/dt

T_J=150°C,I_S=123A,

V_DS= 40V

Peak Diode Recovery 

––– 3.6 ––– V/ns

t_rr

Reverse Recovery Time

–––

T_J= 25° C V_R= 34V,

I_F= 123A

T_J= 125°C

Q_rr

I_RRM

Reverse Recovery Charge

Reverse Recovery Current

T_J= 25°C di/dt = 100A/µs 

T_J= 125°C

––– 2.1 –––

T_J= 25°C

Notes:

C_osseff. (ER) is a fixed capacitance that gives the

 Repetitive rating; pulse width limited by max. junction

temperature.

same energy as C_osswhile V_DSis rising from 0 to

80% V_DSS

 Limited by T_Jmax, starting T_J= 25°C, L = 0.011mH

R_G= 50, I_AS= 123A, V_GS=10V.

R_is measured at T_Japproximately 90°C.

This value determined from sample failure population,

starting T_J= 25°C, L= 0.011mH, R_G= 50, V_GS=10V.

 Limited by T_Jmax, starting T_J= 25°C, L = 1.0mH

R_G= 50, I_AS= 19.5A, V_GS=10V.

 I_SD≤ 123A, di/dt ≤ 1056A/µs, V_DD≤ V(_BR)DSS, T_J≤ 150°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 C_osseff. (TR) is a fixed capacitance that gives the same

charging time as C_osswhile V_DSis rising from 0 to 80%

V_DSS

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Fig 3. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode Forward Voltage

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_ossStored Energy

Fig 13. Typical On-Resistance vs. Drain Current

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-

Case

Fig 15. Avalanche Current vs. Pulse Width

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 14, 15).

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

I_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

Fig 16. Maximum Avalanche Energy vs. Temperature

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Fig 17. Threshold Voltage vs. Temperature

Fig 18. Typical Recovery Current vs. dif/dt

Fig 20. Typical Stored Charge vs. dif/dt

Fig 19. Typical Recovery Current vs. dif/dt

Fig 21. Typical Stored Charge vs. dif/dt

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(B R )D S S

15V

DRIVER

D.U.T

20V

0.01



A S

Fig 23a. Unclamped Inductive Test Circuit

Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit

Fig 24b. Switching Time Waveforms

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 25b. Gate Charge Waveform

Fig 25a. Gate Charge Test Circuit

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

DirectFET^®Board Footprint, ME Outline

(Medium Size Can, E-Designation)

Please see DirectFET^®application note AN-1035 for all details regarding the assembly of DirectFET^®.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

DirectFET^®Outline Dimension, ME Outline

(Medium Size Can, E-Designation)

Please see DirectFET^®application note AN-1035 for all details regarding the assembly of DirectFET^®. This includes all

recommendations for stencil and substrate designs.

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.250

0.199

0.156

0.018

0.024

0.044

0.038

0.052

0.017

0.024

0.036

0.083

0.144

0.028

6.25 6.35

4.80 5.05

3.85 3.95

0.35 0.45

0.58 0.62

1.08 1.12

0.93 0.97

1.28 1.32

0.38 0.42

0.58 0.62

0.88 0.92

2.08 2.12

3.63 3.67

0.59 0.70

0.246

0.189

0.152

0.014

0.023

0.043

0.037

0.050

0.015

0.023

0.035

0.082

0.143

0.023

0.02 0.08 0.0008 0.003

0.08 0.17

0.003

0.007

DirectFET^®Part Marking

LOGO

GATE MARKING

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

DirectFET^®Tape & Reel Dimension (Showing component orientation).

LOADED TAPE FEED DIRECTION

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. Ordered as IRL7486MTRPBF.

DIMENSIONS

METRIC

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

REEL DIMENSIONS

CODE

MIN

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

MIN

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

STANDARD OPTION (QTY 4800)

0.311

0.154

0.469

0.215

0.201

0.256

0.059

7.90

3.90

11.90

5.45

5.10

6.50

1.50

METRIC

IMPERIAL

CODE

MIN

MAX

N.C

MIN

MAX

N.C

13.2

N.C

18.4

14.4

15.4

12.992

0.795

0.504

0.059

3.937

N.C

330.0

20.2

12.8

1.5

N.C

0.520

N.C

100.0

N.C

1.60

0.063

0.724

0.567

0.606

0.488

0.469

12.4

11.9

Note: For the most current drawing please refer to IR webite at http://www.irf.com/package/

Qualification Information

Industrial

(per JEDEC JESD47F^†guidelines)

Qualification Level

MSL1

Moisture Sensitivity Level

RoHS Compliant

DFET 1.5

(per JEDEC J-STD-020D^†)

Yes

† Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Rev.

2.1

Comments



Updated registered trademark from DirectFET^TMto DirectFET^®on page 1,9 and 10.

05/14/2015

07/01/2021

Updated Eas notes

2.2

Rev. 2.1, 2021-07-01

IRL7486MTRPbF

Trademarks of Infineon Technologies AG

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, Cꢀꢁꢁ™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,

DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,

GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,

OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REALꢂ™, SmartLEWIS™, SOLID

FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™

Trademarks updated November ꢃꢄꢀꢅ

Other Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

Edition ꢀꢁꢂꢃ-ꢁ4-ꢂꢄ

Published by

Infineon Technologies AG

ꢅꢂꢆꢀꢃ Munich, Germany

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies oꢆice

ꢇwww.infineon.comꢈ.

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics ꢀꢁBeschaꢇenheitsgarantieꢂꢃ .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

Please note that this product is not qualified

according to the AEC Qꢀꢄꢄ or AEC Qꢀꢄꢀ documents

of the Automotive Electronics Council.

Do you have a question about this

document?

WARNINGS

Due to technical requirements products may

Email: erratum@infineon.com

In addition, any information given in this contain dangerous substances. For information on

document is subject to customer’s compliance the types in question please contact your nearest

with its obligations stated in this document and Infineon Technologies oꢆice.

any applicable legal requirements, norms and

Document reference

ifxꢂ

standards concerning customer’s products and

Except as otherwise explicitly approved by Infineon

any use of the product of Infineon Technologies in

Technologies in a written document signed by

customer’s applications.

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products

may not be used in any applications where a

failure of the product or any consequences of the

use thereof can reasonably be expected to result in

personal injury.

The data contained in this document is exclusively

intended for technically trained staꢆ. It is the

responsibility

customer’s

technical

departments to evaluate the suitability of the

product for the intended application and the

completeness of the product information given in

this document with respect to such application.

Rev. 2.1, 2021-07-01

IRL7486M [INFINEON]

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