IRLBD59N04EPBF [INFINEON]
Power Field-Effect Transistor, 39A I(D), 40V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, D2PAK-5;
| 型号： | IRLBD59N04EPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 39A I(D), 40V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, D2PAK-5 局域网 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-93910B
IRLBD59N04E
HEXFET® Power MOSFET
ꢀ Integrated Temperature Sensing Diode
ꢀ Ultra Low On-Resistance
ꢀ Dynamic dv/dt Rating
VDSS = 40V
ꢀ 175°C Operating Temperature
ꢀ Fully Avalanche Rated
RDS(on) = 0.018Ω
ꢀ Zener Gate Protected
ID = 59Aꢀ
Description
The IRLBD59N04E is a 40V, N-channel HEXFET®
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
oftwoantiparallelelectricallyisolatedpoly-silicondiodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggednessyouexpectfromaHEXFETpowerMOSFET.
5 Lead-D2Pak
Absolute Maximum Ratings
Parameter
Max.
59ꢀ
41
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢁ
A
230
PD @TC = 25°C
Power Dissipation
130
W
W/°C
V
Linear Derating Factor
0.89
± 10
340
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢂ
Avalanche Currentꢁ
mJ
A
35
EAR
dv/dt
IG
Repetitive Avalanche Energyꢁ
Peak Diode Recovery dv/dt ꢃ
VGS Clamp Current
13
mJ
V/ns
mA
kV
3.6
± 50
± 2.0
-55 to + 175
VESD
TJ
Electrostatic Votage Ratingꢀ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.12
Units
°C/W
RθJC
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
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1
11/13/01
IRLBD59N04E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.018
––– ––– 0.021
V
GS = 10V, ID = 35A
ꢀ
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = 5.0V, ID = 30A
VDS = VGS, ID = 250µA
IGSS = 20µA
ꢀ
VGS(th)
VGS
Gate Threshold Voltage
Clamp Voltage
1.0
10
29
––– 2.0
––– 20
––– –––
V
V
S
gfs
Forward Transconductance
VDS = 25V, ID = 35A
VDS = 40V, VGS = 0V
––– ––– 25
––– ––– 250
––– ––– 1.0
––– ––– -1.0
––– ––– 50
––– ––– 13
––– ––– 18
µA
µA
IDSS
IGSS
Drain-to-Source Leakage Current
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 5.0V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -5.0V
Qg
Qgs
Qgd
td(on)
tr
ID = 35A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 32V
VGS = 5.0V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
7.8 –––
84 –––
33 –––
67 –––
VDD = 20V
ID = 35A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω,
VGS = 5.0V, See Fig.10 ꢀ
Between lead,
6mm (0.25in.)
from package
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 2.0 –––
––– 5.0 –––
nH
G
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 2190 –––
––– 670 –––
––– 130 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
pF
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
59ꢂ
A
G
ISM
Pulsed Source Current
(Body Diode) ꢁ
integral reverse
––– ––– 230
––– ––– 1.3
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
TJ = 25°C, IS = 35A, VGS = 0V
TJ = 25°C, IF = 35A
ꢀ
––– 57
––– 84 130
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
86
ns
Qrr
ton
nC di/dt = 100A/µs
ꢀ
Sense Diode Rating
Parameter
Min. Typ. Max. Units
Conditions
VFM
Sense Diode Maximum Voltage Drop
675 ––– 725 mV IF = 250µA, TJ = 25°C
∆VF/∆TJ
Sense Diode Temperature Coefficient -1.30 -1.40 -1.58 mV/°C IF = 250µA, (TJ = 25°C and 160°C)
2
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IRLBD59N04E
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
TOP
TOP
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
300µs PULSE WIDTH
300µs PULSE WIDTH
T
= 25°C
T
= 175°C
J
J
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
2.0
1.5
1.0
0.5
I
= 59A
D
V
= 10V
GS
T
= 25°C
J
100
T
= 175°C
J
V
= 15V
DS
300µs PULSE WIDTH
10
2.0
4.0
6.0
8.0
10.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLBD59N04E
100000
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
f = 1 MHZ
GS
I
= 35A
V
= 32V
D
DS
C
= C
+
C
,
C
iss
SHORTED
gs
gd
ds
VDS= 20V
VDS= 8.0V
C
= C
gd
rss
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
Coss
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
10
0
10
G
20
30
40
1
100
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
T
= 25°C
1msec
J
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
, Drain-toSource Voltage (V)
100
V
, Source-toDrain Voltage (V)
V
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLBD59N04E
60
50
40
30
20
10
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
90%
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
2. Peak T = P
t
/ t
1
2
x Z
+ T
J
DM
0.01
thJC
C
0.01
0.00001
0.0001
0.001
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLBD59N04E
800
600
400
200
0
15V
I
D
TOP
14A
25A
35A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
0.8
0.7
0.6
0.5
0.4
Q
Q
GD
GS
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
I
= 250µA
F
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
0
25
50
75
100
125
150
175
V
GS
T
, Temperature ( °C )
3mA
J
I
I
D
G
Current Sampling Resistors
Fig 14. Sense Diode Voltage Drop
Vs.Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRLBD59N04E
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
ꢀ
-
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 15. For N-channel HEXFET® power MOSFETs
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7
IRLBD59N04E
Case Outline 5 Lead-D2Pak (SMD-220)
PIN ASSIGNMENTS
1
2
3
4
5
-
G - GATE
- T1 - ANODE
- DRAIN
- T2 - CATHODE
- SOURCE
-
D
-
S
Notes:
ꢃ Repetitive rating; pulse width limited by
ꢁ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢄ
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A
ꢂ Starting TJ = 25°C, L = 0.55mH
RG = 25Ω, IAS = 35A. (See Figure 12)
ꢀ C = 100pF, R = 1.5kΩ
ꢀ ISD ≤ 35A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/01
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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