IRLD110PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLD110PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：1740K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95980
IRLD110PbF
Lead-Free
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12/20/04
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IRLD110PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14 For N Channel HEXFETS
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IRLD110PbF
Hexdip Package Outline
Hexdip Part Marking Information
THIS IS AN IRFD120
PART NUMBER
INTERNATIONAL
RECTIFIER
IRFD120
LOGO
DATE CODE
(PYWWA)
P = LEAD-FREE (optional)
XXXX
Y = YEAR
WW = WE E K
ASSEMBLY LOT CODE
A = ASSEMBLYSITE CODE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
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