IRLHS6276PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLHS6276PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97570B
IRLHS6276PbF
HEXFET® Power MOSFET
VDS
VGS
20
12
V
V
±
RDS(on) max
(@VGS = 4.5V)
D1
G2
45
62
m
Ω
S2
D1
D2
RDS(on) max
(@VGS = 2.5V)
m
Ω
S1
G1
ID
D2
3.4
A
(@Tc(Bottom) = 25°C)
2mm x 2mm Dual PQFN
Applications
• Charge and discharge switch for battery application
• Load/System Switch
FeaturesandBenefits
Features
Resulting Benefits
Low RDSon (≤ 45mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRLHS6276TRPBF
IRLHS6276TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
400
Absolute Maximum Ratings
Parameter
Max.
20
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
±12
4.5
3.6
9.6
6.1
3.4
40
GS
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC(Bottom) = 25°C
A
Continuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
DM
Power Dissipation
P
P
@TA = 25°C
1.5
6.6
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
0.012
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
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1
07/19/11
IRLHS6276PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
9.3
33
–––
V
ΔΒVDSS/ΔTJ
RDS(on)
–––
–––
–––
0.5
45
62
VGS = 4.5V, ID = 3.4A
VGS = 2.5V, ID = 3.4A
mΩ
46
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
0.8
-3.8
–––
–––
–––
–––
–––
3.1
0.22
1.3
4.0
4.4
9.3
10
1.1
V
VDS = VGS, ID = 10μA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
8.8
––– mV/°C
1.0
μA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
VGS = -12V
gfs
Qg
–––
–––
–––
–––
S
nC
Ω
VDS = 10V, ID = 3.4A
V
DS = 10V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
RG
td(on)
tr
VGS = 4.5V
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
ID = 3.4A (See Fig.17 & 18)
–––
–––
Turn-On Delay Time
Rise Time
V
DD = 10V, VGS = 4.5V
ID = 3.4A
–––
–––
–––
–––
–––
–––
ns
td(off)
tf
Ω
RG=1.8
See Fig.15
VGS = 0V
Turn-Off Delay Time
Fall Time
4.9
310
79
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF VDS = 10V
ƒ = 1.0MHz
49
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
–––
–––
9.6
showing the
(Body Diode)
A
G
ISM
Pulsed Source Current
integral reverse
–––
–––
40
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 3.4A , V = 0V
Diode Forward Voltage
–––
–––
–––
–––
5.2
5.0
1.2
7.8
7.5
V
J
S
GS
T = 25°C, I = 3.4A , VDD = 10V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 126A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
19
175
86
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
JA
RθJA (<10s)
69
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ R is measured at TJ of approximately 90°C.
θ
For DESIGN AID ONLY, not subject to production testing.
2
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IRLHS6276PbF
100
10
1
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
BOTTOM
BOTTOM
1
1.4V
1.4V
0.1
0.01
60μs PULSE WIDTH
≤
60μs PULSE WIDTH
≤
Tj = 25°C
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.6
1.4
1.2
1.0
0.8
0.6
I
= 3.4A
D
V
= 4.5V
GS
10
T
= 150°C
J
1
T
= 25°C
J
V
= 10V
DS
≤
60μs PULSE WIDTH
0.1
0.0
1.0
2.0
3.0 4.0
5.0
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 3.4A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
10.0
8.0
= C
rss
oss
gd
= C + C
V
V
V
= 16V
DS
DS
DS
ds
gd
= 10V
1000
100
10
= 4.0V
C
C
iss
oss
6.0
C
rss
4.0
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
V
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLHS6276PbF
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
T
= 150°C
J
100μsec
T
= 25°C
J
Limited by
Wire Bond
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
DC
GS
0.1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1.2
1.0
0.8
0.6
0.4
0.2
10
9
Limited By Package
8
7
6
5
4
3
2
1
0
I
= 25μA
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLHS6276PbF
100
80
60
40
20
0
250
200
150
100
50
I
= 3.4A
D
V
2.5V
GS =
T
= 125°C
= 25°C
J
V
4.5V
20
GS =
T
J
0
0
2
4
6
8
10
12
0
5
10
15
25
30
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
60
1000
I
D
TOP
0.89A
1.8A
50
40
30
20
10
0
800
600
400
200
0
BOTTOM 3.4A
25
50
75
100
125
150
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Starting T , Junction Temperature (°C)
J
Time (sec)
Fig 15. Typical Power vs. Time
Fig 14. Maximum Avalanche Energy vs. Drain Current
Driver Gate Drive
P.W.
Period
D.U.T
Period
D =
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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5
IRLHS6276PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
Ω
0.01
t
AS
p
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
VDD
-
10%
VGS
1
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
td(on)
td(off)
tr
tf
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRLHS6276PbF
PQFN Dual 2x2 Outline Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN Dual 2x2 Outline Part Marking
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLHS6276PbF
PQFN Dual 2x2 Outline Tape and Reel
8
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IRLHS6276PbF
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN Dual 2mm x 2mm
(per JEDEC J-S T D-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/11
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9
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