IRLI3705N [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLI3705N |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1369B
IRLI3705N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
D
l Advanced Process Technology
l Isolated Package
VDSS = 55V
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
RDS(on) = 0.01Ω
G
ID = 52A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulatinghardwareincommercial-industrialapplications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
andexternalheatsink. Thisisolationisequivalenttousing
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
52
37
A
310
PD @TC = 25°C
Power Dissipation
58
W
W/°C
V
Linear Derating Factor
0.39
± 16
340
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
46
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
5.8
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
2.6
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
65
8/25/97
IRLI3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010
––– ––– 0.012
––– ––– 0.018
VGS = 10V, ID = 28A
VGS = 5.0V, ID = 28A
VGS = 4.0V, ID = 24A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 46A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
50
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 98
––– ––– 19
––– ––– 49
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 46A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
–––
12 –––
VDD = 28V
––– 140 –––
ID = 46A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
37 –––
78 –––
RG = 1.8Ω, VGS = 5.0V
RD = 0.59Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
C
Input Capacitance
––– 3600 –––
––– 870 –––
––– 320 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
–––
12 –––
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 52
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
310
––– –––
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 94 140
––– 290 440
V
TJ = 25°C, IS = 28A, VGS = 0V
TJ = 25°C, IF = 46A
ns
Qrr
nC di/dt = 100A/µs
Notes:
ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
ꢀ t=60s, ƒ=60Hz
Uses IRL3705N data and test conditions
IRLI3705N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
BOTT OM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
VD S , Drain-to-Source Voltage (V)
VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3. 0
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
1 0 0 0
1 0 0
1 0
I
= 77A
D
T
= 25°C
J
TJ = 175 °C
V
= 25V
DS
V
= 10V
GS
2 0µ s PU LS E W IDTH
1
A
8. 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
TJ , Junction Temperature (°C)
VG S , Gate -to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRLI3705N
6000
15
12
9
V
C
C
C
= 0V ,
f = 1MHz
GS
iss
I
= 46A
D
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
g d
ds
gd
ds
V
V
= 44V
= 28V
D S
D S
rss
oss
5000
4000
3000
2000
1000
0
C
is s
gd
C
C
o s s
rs s
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
A
0
A
1
10
100
0
20
40
60
80
100
120
140
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
10µs
100µs
1 0 0
T
= 175°C
J
1 ms
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
GS
S ingle Pulse
1 0
A
1
A
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
2. 8
1
10
100
VSD , Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRLI3705N
60
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLI3705N
800
600
400
200
0
I
D
TOP
19A
33A
15 V
BOTTOM 46A
D R IVER
L
V
D S
D .U .T
A S
R
G
+
V
D D
-
I
A
20V
Ω
0 .0 1
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
D D
A
175
25
75
100
125
150
V
(BR)DSS
Starting TJ , Junction Temperature (°C)
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRLI3705N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V *
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRLI3705N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417 )
10.40 (.409 )
3 .40 (.1 33)
3 .10 (.1 23)
4.80 (.189 )
4.60 (.181 )
ø
2.80 (.110)
2.60 (.102)
-
A
-
3.7 0 (.145)
3.2 0 (.126)
L EA D AS SIGN M EN T S
1
2
3
-
-
-
GA T E
7.10 (.280 )
6.70 (.263 )
D R AIN
SO U R C E
16 .0 0 (.630)
15 .8 0 (.622)
1.15 (.045)
M IN .
NO T ES :
1
D IM E N SION IN G & T O LER AN C IN G
PE R A N SI Y1 4.5M , 1982
1
2
3
2
C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130)
3.10 (.122)
-
B
-
13 .7 0 (.540)
13 .5 0 (.530)
C
D
A
B
0.48 (.019 )
0.44 (.017 )
0.90 (.035 )
3X
0.70 (.028 )
3X
1.40 (.05 5)
1.05 (.04 2)
3X
2.85 (.1 12)
2.65 (.1 04)
0.25 (.010)
A
M
B
M
M IN IM U M C R E EP AG E
D IST A N C E B ET W E EN
A -B -C -D = 4.80 (.189 )
2 .5 4 (.100)
2X
Part Marking Information
TO-220 Fullpak
EXAM PLE : THIS IS AN IRFI840G
W ITH ASSEMBLY
LOT CODE E401
A
PART NUMBER
INTERNATIONAL
IRFI840G
RECTIFIER
LOGO
E401 9 24 5
ASSEMBLY
DATE CODE
LOT CODE
(YYW W )
YY
= YEAR
W W W EEK
=
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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