IRLI520 [INFINEON]
Power MOSFET; 功率MOSFET
Infineon 
PD - 9.1496A
IRLI520N
PRELIMINARY
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Isolated Package
D
VDSS = 100V
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
RDS(on) = 0.18Ω
G
ID =8.1A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulatinghardwareincommercial-industrialapplications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
andexternalheatsink. Thisisolationisequivalenttousing
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
8.1
5.7
A
35
PD @TC = 25°C
Power Dissipation
30
0.20
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
Single Pulse Avalanche Energy
Avalanche Current
85
mJ
A
6.0
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
3.0
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
5.0
65
Units
RθJC
RθJA
°C/W
–––
3/16/98
IRLI520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.18
––– ––– 0.22
––– ––– 0.26
VGS = 10V, ID = 6.0A
VGS = 5.0V, ID = 6.0A
VGS = 4.0V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 6.0A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
3.1
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 4.6
––– ––– 10
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 6.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
40 –––
35 –––
23 –––
22 –––
VDD = 50V
ID = 6.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 11Ω, VGS = 5.0V
RD = 8.2Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
6mm (0.25in.)
nH
pF
G
from package
––– 7.5 –––
––– 440 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
–––
–––
–––
97 –––
50 –––
12 –––
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
8.1
35
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 110 160
––– 410 620
V
TJ = 25°C, IS = 6.0A, VGS = 0V
ns
TJ = 25°C, IF = 6.0A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 4.7mH
ꢀ t=60s, ƒ=60Hz
RG = 25Ω, IAS = 6.0A. (See Figure 12)
Uses IRL520N data and test conditions
ISD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
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