IRLI630G [INFINEON]
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A); 功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.40ohm ，ID = 6.2A ）
| 型号： | IRLI630G |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A) |
| 文件： | 总8页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1236
IRLI630G
HEXFET® Power MOSFET
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
VDSS = 200V
RDS(on) = 0.40Ω
ID = 6.2A
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current
6.2
3.9
A
25
35
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.28
VGS
EAS
IAR
Gate-to-Source Voltage
±10
Single Pulse Avalanche Energy
Avalanche Current
125
mJ
A
6.2
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
3.5
mJ
V/ns
5.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
––––
Max.
3.6
Units
RθJC
RθJA
°C/W
65
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IRLI630G
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.40
––– ––– 0.50
1.0 ––– 2.0
4.8 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 40
––– ––– 5.5
––– ––– 24
––– 8.0 –––
––– 57 –––
––– 38 –––
––– 33 –––
VGS = 5.0V, ID = 3.7A
VGS = 4.0V, ID = 3.1A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 5.4A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 10V
Ω
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -10V
Qg
ID = 9.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 160V
VGS = 10V, See Fig. 6 and 13
VDD = 100V
ID = 9.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 11Ω, See Fig. 10
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
from package
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1100 –––
––– 220 –––
––– 70 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 6.2
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
25
p-n junction diode.
TJ = 25°C, IS = 6.2A, VGS = 0V
TJ = 25°C, IF = 9.0A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 2.0
––– 230 350
––– 1.7 2.6
V
ns
µC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
t=60s, ƒ=60Hz
I
SD ≤ 9.0A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 25V, starting TJ = 25°C, L = 2.4mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 6.2A. (See Figure 12)
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IRLI630G
100
10
1
100
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
BOTTOM 2.25V
10
2.25V
1
2.25V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 150°C
T
c
= 25°C
C
0.1
0.1
100A
100 A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 150oC
2.5
2.0
1.5
1.0
0.5
0.0
100
10
I
= 9.0A
D
TJ = 150°C
1
T = 25°C
J
0.1
0.01
VDS = 50V
20µs PULSE WIDTH
V
= 5.0V
GS
A
A
5.0
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLI630G
10
8
2000
I
= 9.0A
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
= C
gd
= C + C
ds
gd
1500
1000
500
0
C
iss
6
4
C
oss
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
A
0
A
0
10
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
10 0
1 0
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100µs
1ms
T = 150°C
J
T = 25°C
J
10ms
100ms
T
T
= 25°C
= 150°C
C
J
V
GS
= 0V
Single Pulse
0.1
A
0.1
A
1000
0
0.4
0.8
1.2
1.6
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRLI630G
RD
VDS
VGS
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
D.U.T.
RG
VDD
5.0 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
A
25
50
75
100
125
150
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t
/ t
2
1
2. Peak T = P
x Z
+ T
C
DM
J
thJC
0.01
0.00001
A
10A
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLI630G
300
250
200
150
100
50
I
D
TOP
2.8A
3.9A
BOTTOM 6.2A
5.0V
Fig 12a. Unclamped Inductive Test Circuit
V
= 50V
50
DD
0
A
150
25
75
100
125
Starting T , Juntion Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
5.0V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRLI630G
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRLI630G
Package Outline
TO-220 Full-Pak
Part Marking Information
TO-220 Full-Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
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