IRLIZ44N [INFINEON]
Power MOSFET; 功率MOSFET
Infineon 
PD - 9.1498A
IRLIZ44N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
D
l Advanced Process Technology
l Isolated Package
VDSS = 55V
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
RDS(on) = 0.022Ω
G
ID = 30A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulatinghardwareincommercial-industrialapplications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
andexternalheatsink. Thisisolationisequivalenttousing
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
22
160
A
PD @TC = 25°C
Power Dissipation
45
W
W/°C
V
Linear Derating Factor
0.3
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
210
Single Pulse Avalanche Energy
Avalanche Current
mJ
25
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
4.5
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
3.3
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
65
8/25/97
IRLIZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.022
––– ––– 0.025
––– ––– 0.035
VGS = 10V, ID = 17A
VGS = 5.0V, ID = 17A
VGS = 4.0V, ID = 14A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
21
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 48
––– ––– 8.6
––– ––– 25
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
84 –––
26 –––
15 –––
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.4Ω, VGS = 5.0V
RD = 1.1Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
C
Input Capacitance
––– 1700 –––
––– 400 –––
––– 150 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
–––
12 –––
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
30
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 160
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 80 120
––– 210 320
V
TJ = 25°C, IS = 17A, VGS = 0V
ns
TJ = 25°C, IF = 25A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
ꢀ t=60s, ƒ=60Hz
Uses IRLZ44N data and test conditions
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRLIZ44N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TO P
TOP
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTT OM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
J
T
= 175°C
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
VD S , Drain-to-Source Voltage (V)
VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3. 0
1 0 0 0
1 0 0
1 0
I
= 41A
D
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
T
= 25°C
J
T
= 175°C
J
V
= 25V
DS
V
= 10V
GS
20µs P ULS E W IDTH
1
A
9. 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
8. 0
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLIZ44N
15
12
9
2800
I
= 25A
V
= 0V,
f = 1MHz
D
GS
C
C
C
= C
= C
= C
+ C
+ C
,
C SHORTED
ds
V
V
= 44V
= 28V
iss
gs
gd
ds
gd
D S
D S
2400
2000
1600
1200
800
400
0
rss
oss
gd
C
is s
C
C
o ss
rss
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
10
20
30
40
50
60
70
1
10
100
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1 0 0
1 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
10µs
100µs
T
= 175°C
J
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
S ingle Pulse
C
J
V
= 0V
GS
A
1
A
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRLIZ44N
35
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLIZ44N
500
400
300
200
100
0
L
I
D
V
DS
TOP
10A
17A
D.U.T.
BOTTOM 25A
R
+
-
G
V
DD
I
5.0 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
D D
A
175
V
(BR)DSS
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
t
p
V
Fig 12c. Maximum Avalanche Energy
DD
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLIZ44N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V *
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRLIZ44N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417 )
10.40 (.409 )
3 .40 (.1 33)
3 .10 (.1 23)
4.80 (.189 )
4.60 (.181 )
ø
2.80 (.110)
2.60 (.102)
-
A
-
3.7 0 (.145)
3.2 0 (.126)
L EA D AS SIGN M EN T S
1
2
3
-
-
-
GA T E
7.10 (.280 )
6.70 (.263 )
D R AIN
SO U R C E
16 .0 0 (.630)
15 .8 0 (.622)
1.15 (.045)
M IN .
NO T ES :
1
D IM E N SION IN G & T O LER AN C IN G
PE R A N SI Y1 4.5M , 1982
1
2
3
2
C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130)
3.10 (.122)
-
B
-
13 .7 0 (.540)
13 .5 0 (.530)
C
D
A
B
0.48 (.019 )
0.44 (.017 )
0.90 (.035 )
3X
0.70 (.028 )
3X
1.40 (.05 5)
1.05 (.04 2)
3X
2.85 (.1 12)
2.65 (.1 04)
0.25 (.010)
A
M
B
M
M IN IM U M C R E EP AG E
D IST A N C E B ET W E EN
A -B -C -D = 4.80 (.189 )
2 .5 4 (.100)
2X
Part Marking Information
TO-220 Fullpak
E
X
A
M
P
LE
LOT CODE E401
:
TH
IT
I
H
S
A
IS
S
A
S
N
I
BLY
R
F
I
840G
W
A
PART NUMBER
INTERNATIONAL
IRFI840G
RECTIFIER
LOGO
E401 9 24 5
ASSEMBLY
DATECODE
LOT CODE
(YYW W )
YY
= YEAR
W W W EEK
=
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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