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IRLL014NTR

更新时间：2024-10-29 12:42:35
品牌：INFINEON
描述：Advanced Process Technology

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IRLL014NTR 概述

Advanced Process Technology 先进的工艺技术 MOS管 功率场效应晶体管

IRLL014NTR 规格参数

是否Rohs认证：不符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.69
Is Samacsys：N其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：32 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (ID)：2 A最大漏源导通电阻：0.14 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：16 A
认证状态：Not Qualified表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRLL014NTR 数据手册

通过下载IRLL014NTR数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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PD- 91499B  
IRLL014N  
HEXFET® Power MOSFET  
l Surface Mount  
D
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l Fast Switching  
VDSS = 55V  
RDS(on) = 0.14Ω  
G
l Fully Avalanche Rated  
ID = 2.0A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremelylow on-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The SOT-223 package is designed for surface-mount  
usingvaporphase,infrared,orwavesolderingtechniques.  
Its unique package design allows for easy automatic pick-  
and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performance  
due to an enlarged tab for heatsinking. Power dissipation  
of 1.0W is possible in a typical surface mount application.  
S O T -223  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V**  
Continuous Drain Current, VGS @ 10V*  
Continuous Drain Current, VGS @ 10V*  
Pulsed Drain Current   
2.8  
2.0  
A
1.6  
16  
PD @TA = 25°C  
PD @TA = 25°C  
Power Dissipation (PCB Mount)**  
Power Dissipation (PCB Mount)*  
Linear Derating Factor (PCB Mount)*  
Gate-to-Source Voltage  
2.1  
W
W
1.0  
8.3  
mW/°C  
V
VGS  
± 16  
EAS  
Single Pulse Avalanche Energy‚  
Avalanche Current  
32  
2.0  
mJ  
A
IAR  
EAR  
Repetitive Avalanche Energy*  
Peak Diode Recovery dv/dt ƒ  
Junction and Storage Temperature Range  
0.1  
mJ  
V/ns  
°C  
dv/dt  
TJ, TSTG  
7.2  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Amb. (PCB Mount, steady state)*  
Typ.  
90  
Max.  
120  
Units  
RθJA  
RθJA  
°C/W  
Junction-to-Amb. (PCB Mount, steady state)**  
50  
60  
* When mounted on FR-4 board using minimum recommended footprint.  
** When mounted on 1 inch square copper board, for comparison with other SMD devices.  
www.irf.com  
1
1/25/99  
IRLL014N  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
55 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA  
––– ––– 0.14  
––– ––– 0.20  
––– ––– 0.28  
VGS = 10V, ID = 2.0A „  
VGS = 5.0V, ID = 1.2A „  
VGS = 4.0V, ID = 1.0A „  
VDS = VGS, ID = 250µA  
VDS = 25V, ID = 1.0A  
VDS = 55V, VGS = 0V  
VDS = 44V, VGS = 0V, TJ = 150°C  
VGS = 16V  
RDS(on)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
Gate Threshold Voltage  
1.0  
2.3  
––– 2.0  
––– –––  
V
S
Forward Transconductance  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = -16V  
Qg  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
9.5  
14  
ID = 2.0A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
1.1 1.7  
3.0 4.4  
5.1 –––  
4.9 –––  
14 –––  
2.9 –––  
nC VDS = 44V  
VGS = 10V, See Fig. 6 and 9 „  
VDD = 28V  
ID = 2.0A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 6.0Ω  
RD = 14Ω, See Fig. 10 „  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
––– 230 –––  
Output Capacitance  
–––  
–––  
66 –––  
30 –––  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
IS  
––– ––– 1.3  
A
showing the  
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
–––  
––– ––– 1.0  
––– 41 61  
––– 73 110  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
16  
–––  
p-n junction diode.  
TJ = 25°C, IS = 2.0A, VGS = 0V „  
TJ = 25°C, IF = 2.0A  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
V
ns  
Qrr  
ton  
nC di/dt = 100A/µs „  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS  
,
max. junction temperature. ( See fig. 11 )  
TJ ≤ 150°C  
‚ VDD = 25V, starting TJ = 25°C, L = 4.0mH  
RG = 25Ω, IAS = 4.0A. (See Figure 12)  
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
2
www.irf.com  
IRLL014N  
100  
10  
1
100  
10  
1
VGS  
15V  
VGS  
15V  
TOP  
TOP  
10V  
10V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
BOT TOM 3.0V  
BOTTOM 3.0V  
3.0V  
20µs PULS E W IDTH  
TJ = 25°C  
20µs P ULSE W IDTH  
T
3.0V  
= 150°C  
J
A
A
100  
0.1  
1
10  
100  
0.1  
1
10  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
D S  
Fig 2. Typical Output Characteristics,  
Fig 1. Typical Output Characteristics,  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
I
= 2.0A  
D
10  
TJ = 25°C  
TJ = 150°C  
VDS = 25V  
20µs PULSE W IDTH  
V
= 10V  
G S  
1
A
7.0A  
-60  
-40  
-20  
J
0
20  
40  
60  
80  
100 120 140 160  
3.0  
4.0  
5.0  
6.0  
T
, Junction Tem perature (°C)  
VG S , Gate-to-Source Voltage (V)  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRLL014N  
20  
16  
12  
8
400  
V
C
C
C
= 0V ,  
f = 1M Hz  
I
= 2.0A  
D
G S  
iss  
= C  
= C  
= C  
+ C  
+ C  
,
C
SHORTED  
gs  
gd  
ds  
gd  
ds  
V
V
= 44V  
= 28V  
DS  
DS  
rss  
oss  
gd  
300  
200  
100  
0
C
iss  
C
C
oss  
rss  
4
FOR TE ST CIRCUIT  
S EE FIGURE 9  
0
A
A
1
10  
100  
0
3
6
9
12  
15  
V
, Drain-to-Source Voltage (V)  
Q
, Total Gate Charge (nC)  
DS  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
100  
10  
1
OPE RATION IN THIS AREA LIM ITE D  
BY R  
DS(on)  
10µs  
10  
1 00µs  
T
= 150°C  
J
T
= 25°C  
J
1m s  
1
10m s  
T
T
= 25°C  
= 150°C  
A
J
S ingle Pulse  
V
= 0V  
G S  
A
0.1  
0.1  
A
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Source-to-Drain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRLL014N  
RD  
VDS  
Q
G
10V  
VGS  
D.U.T.  
Q
Q
GD  
GS  
RG  
+ VDD  
-
V
G
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Charge  
Fig 9a. Basic Gate Charge Waveform  
Fig 10a. Switching Time Test Circuit  
Current Regulator  
Same Type as D.U.T.  
V
DS  
50KΩ  
90%  
.2µF  
12V  
.3µF  
+
V
DS  
D.U.T.  
-
10%  
V
GS  
V
GS  
t
t
r
t
t
f
3mA  
d(on)  
d(off)  
I
I
D
G
Current Sampling Resistors  
Fig 9b. Gate Charge Test Circuit  
Fig 10b. Switching Time Waveforms  
1000  
100  
10  
1
D
=
0.5 0  
0.20  
0.10  
0.05  
P
D M  
0.02  
0.01  
t
1
t
2
N otes:  
1 . D uty factor D  
=
t
/ t  
2
S IN G LE P U LS E  
(T H E R M A L R E S P O N S E )  
1
Z
2. P eak T  
=
P
x
+ T  
thJA A  
D M  
J
A
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t
, R ectangular Pulse Du ration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRLL014N  
80  
60  
40  
20  
0
I
D
TO P  
1.8A  
3.2A  
4.0A  
15V  
B OTTOM  
DRIVER  
L
V
D S  
D.U .T  
AS  
R
+
G
V
DD  
-
I
A
10V  
0.01  
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit  
V
= 25V  
50  
DD  
A
150  
V
(BR)DSS  
25  
75  
100  
125  
Starting T , Junction Tem perature (°C)  
t
J
p
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Fig 12b. Unclamped Inductive Waveforms  
6
www.irf.com  
IRLL014N  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 13. For N-Channel HEXFETS  
www.irf.com  
7
IRLL014N  
Package Outline  
SOT-223 (TO-261AA) Outline  
Part Marking Information  
EXAMPLE : THIS IS AN IRFL014  
SOT-223  
W AFER  
PART NUM BER  
LO T CO DE  
FL014  
314  
XXXXXX  
INTERNATIO NAL  
RECTIFIER  
LOG O  
DATE CO DE (YW W )  
Y
=
LAST DIG IT OF THE YEAR  
W EEK  
BO TTOM  
TOP  
W W  
=
8
www.irf.com  
IRLL014N  
Tape & Reel Information  
SOT-223 Outline  
4.10 (.161)  
3.90 (.154)  
0.35 (.013)  
0.25 (.010)  
1.85 (.072)  
1.65 (.065)  
2.05 (.080)  
1.95 (.077)  
T R  
7.55 (.297)  
7.45 (.294)  
16.30 (.641)  
15.70 (.619)  
7.60 (.299)  
7.40 (.292)  
1.60 (.062)  
1.50 (.059)  
TYP .  
FE E D D IR E C T IO N  
2.30 (.0 90)  
2.10 (.0 83)  
7.10 (.279)  
6.90 (.272)  
12.10 (.475)  
11.90 (.469)  
N O T E S  
1. C O N TR O LLIN G D IM E N S IO N : M ILLIM E TE R .  
2. O U T LIN E C O N F O R M S TO E IA -481 E IA -541.  
:
&
3. E A C H O 330.00 (13.0 0) R E E L C O N TA IN S 2,500 D E VIC E S.  
13.20 (.51 9)  
12.80 (.50 4)  
15.40 (.607)  
11.90 (.469)  
4
330.00  
(13.000)  
MAX.  
50.00 (1.969)  
M IN .  
18.40 (.724)  
M AX .  
N O TE S  
:
1. O U T LIN E C O M FO R M S TO E IA -418-1.  
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER ..  
3. D IM E N S IO N M E AS U R E D  
14.40 (.566)  
12.40 (.488)  
4
@ HU B.  
4. IN CLU D E S F LA N G E D IS TO R T IO N  
@
O U T ER ED G E .  
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936  
http://www.irf.com/  
Data and specifications subject to change without notice. 1/99  
www.irf.com  
9

IRLL014NTR 替代型号

型号 制造商 描述 替代类型 文档
IRLL014NPBF INFINEON HEXFET Power MOSFET 类似代替
IRLL014NTRPBF INFINEON Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal 类似代替
STN2NF06L STMICROELECTRONICS N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET 功能相似

IRLL014NTR 相关器件

型号 制造商 描述 价格 文档
IRLL014NTRPBF INFINEON Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4 获取价格
IRLL014PBF INFINEON HEXFET Power MOSFET 获取价格
IRLL014PBF VISHAY Power MOSFET 获取价格
IRLL014TR VISHAY Power MOSFET 获取价格
IRLL014TRA VISHAY Power MOSFET 获取价格
IRLL014TRPBF VISHAY Power MOSFET 获取价格
IRLL014TRPBF INFINEON Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 获取价格
IRLL014TRPBFA VISHAY Power MOSFET 获取价格
IRLL014_10 VISHAY Power MOSFET 获取价格
IRLL024N INFINEON HEXFET Power MOSFET 获取价格

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