IRLL024NQPBF [INFINEON]
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| 型号： | IRLL024NQPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 |
| 文件： | 总8页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91895
IRLL024N
HEXFET® Power MOSFET
l Surface Mount
D
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
VDSS = 55V
RDS(on) = 0.065Ω
G
l Fully Avalanche Rated
ID = 3.1A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The SOT-223 package is designed for surface-mount
usingvaporphase,infrared,orwavesolderingtechniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -223
Absolute Maximum Ratings
Parameter
Max.
4.4
Units
ID @ TA = 25°C
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
3.1
A
ID @ TA = 70°C
2.5
IDM
12
PD @TA = 25°C
PD @TA = 25°C
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
2.1
W
W
1.0
8.3
mW/°C
V
VGS
± 16
120
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
3.1
EAR
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
0.1
mJ
V/ns
°C
dv/dt
TJ, TSTG
5.0
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90
Max.
120
60
Units
RθJA
RθJA
°C/W
50
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
6/15/99
IRLL024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.048 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.065
––– ––– 0.080
––– ––– 0.100
VGS = 10V, ID = 3.1A
VGS = 5.0V, ID = 2.5A
VGS = 4.0V, ID = 1.6A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 1.9 A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 125°C
VGS = 16V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
3.3
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– 10.4 15.6
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 1.9A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
1.5 2.3
5.5 8.3
7.4 –––
21 –––
18 –––
25 –––
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 9
VDD = 28V
ID = 1.9A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24 Ω
RD = 15 Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 510 –––
––– 140 –––
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
–––
58 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 3.1
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 12
p-n junction diode.
TJ = 25°C, IS = 1.9A, VGS = 0V
TJ = 25°C, IF = 1.9A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.0
V
––– 39
––– 63
58
94
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 1.9A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25 mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 3.1A. (See Figure 12)
2
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IRLL024N
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
TOP
TOP
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
3.1A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
1
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLL024N
15
12
9
1000
I
D
= 1.9A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
rss
C
= C + C
800
600
400
200
0
oss ds
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
C
iss
6
C
oss
3
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
100us
1ms
°
T = 150 C
J
1
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.4
0.1
0.6
0.8
1.0
1.4
0.1
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLL024N
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
SINGLE PULSE
(THERMAL RESPONSE)
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLL024N
300
250
200
150
100
50
I
D
TOP
1.4A
2.5A
BOTTOM 3.1A
15V
DRIVER
L
V
D S
D.U .T
R
G
+
V
DD
-
I
A
AS
10V
t
0.01Ω
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRLL024N
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
EXAMPLE : THIS IS AN IRFL014
SOT-223
W AFER
LO T CO DE
PART NUM BER
FL014
314
XXXXXX
BO TTOM
INTERNATIO NAL
RECTIFIER
LOG O
DATE CO DE (YW W )
Y
=
LAST DIG IT OF THE YEAR
W EEK
TOP
W W
=
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7
IRLL024N
Tape & Reel Information
SOT-223 Outline
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
T R
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP .
FE E D D IR E C T IO N
2.30 (.09 0)
2.10 (.08 3)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
N O T E S
1. C O N TR O LLIN G D IM E N S IO N : M ILLIM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 E IA -541.
:
&
3. E A C H O 330.00 (13.00) R E EL C O N T A IN S 2,500 D E V IC E S .
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
M IN .
18.40 (.724)
M AX .
N O T ES
:
1. O U T LIN E C O M FO R M S T O E IA-418-1.
2. C O N T R O LLIN G DIM EN SIO N : M ILLIM ET E R ..
3. D IM E N S IO N M E A S UR E D
14.40 (.566)
12.40 (.488)
4
@ H U B.
4. IN CL U D E S F LA N G E D IS TO R TIO N
@
O U T E R ED G E .
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 6/99
8
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