IRLML2502PBF_12 [INFINEON]
Ultra Low On-Resistance, N-Channel MOSFET, SOT-23 Footprint; 超低导通电阻， N沟道MOSFET ， SOT- 23的脚印
| 型号： | IRLML2502PBF_12 |
| 厂家： | 
Infineon |
| 描述： | Ultra Low On-Resistance, N-Channel MOSFET, SOT-23 Footprint |
| 文件： | 总8页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94892D
IRLML2502PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
G
S
1
2
VDSS = 20V
3
D
RDS(on) = 0.045Ω
l Lead-Free
l Halogen-Free
Description
These N-Channel MOSFETs from International Rectifier
utilizeadvancedprocessingtechniquestoachieveextremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
thatHEXFET® powerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
Micro3™
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
suchasportableelectronicsandPCMCIAcards.Thethermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
4.2
3.4
A
33
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
W
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
V
VGS
Gate-to-Source Voltage
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
75
100
°C/W
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1
09/25/12
IRLML2502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
20
Typ.
–––
Max. Units
Conditions
VGS = 0V, ID = 250uA
V/°C Reference to 25°C, ID = 1.0mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
–––
–––
0.60
–––
5.8
0.01
Ω
0.035 0.045
0.050 0.080
V
GS = 4.5V, ID = 4.2A
GS = 2.5V, ID = 3.6A
V
VGS(th)
ΔVGS(th)
gfs
Gate Threshold Voltage
–––
-3.2
–––
–––
–––
–––
–––
8.0
1.8
1.7
7.5
10
1.2
V
VDS = VGS, ID = 250μA
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
––– mV/°C
–––
1.0
S
VDS = 10V, ID = 4.0A
VDS = 16V, VGS = 0V
IDSS
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
μA
25
V
DS = 16V, VGS = 0V, TJ = 70°C
VGS = 12V
GS = -12V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
100
-100
12
nA
nC
V
Qg
ID = 4.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.7
VDS = 10V
2.6
V
GS = 5.0V
DD = 10V
–––
–––
–––
–––
–––
–––
–––
V
ID = 1.0A
RG = 6Ω
RD = 10Ω
VGS = 0V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
54
26
Ciss
Coss
Crss
Input Capacitance
740
90
pF
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
66
ƒ = 1.0MHz
Source-Drain Rating and Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
1.3
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
integral reverse
–––
–––
33
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
16
1.2
24
13
V
TJ = 25°C, IS = 1.3A, VGS = 0V
ns TJ = 25°C, IF = 1.3A
di/dt = 100A/μs
nC
Qrr
Reverse Recovery Charge
8.6
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
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IRLML2502PbF
100
10
1
100
10
1
VGS
VGS
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
BOTTOM 2.25V
2.25V
2.25V
20μs PULSE WIDTH
T = 25 C
J
20μs PULSE WIDTH
T = 150 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
4.0A
=
I
D
1.5
°
T = 25 C
J
1.0
0.5
0.0
°
T = 150 C
J
V
= 15V
DS
20μs PULSE WIDTH
V
=4.5V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.4
2.8
3.2 3.6
4.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML2502PbF
10
8
1200
I
D
=
4.0A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
= 10V
DS
C
= C
rss
gd
1000
800
600
400
200
0
C
= C + C
oss
ds
gd
C
iss
6
4
2
C
oss
C
rss
0
0
4
8
12
16
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.4
V , Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLML2502PbF
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML2502PbF
0.30
0.20
0.10
0.00
0.05
VGS = 2.5V
0.04
Id = 4.0A
0.03
0.02
VGS = 4.5V
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
0
10
20
30
40
V
Gate -to -Source Voltage ( V )
i
, Drain Current ( A )
GS,
D
Fig 11. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
1.3
1.1
0.9
0.7
ID = 50μA
ID = 250μA
0.5
-75 -50 -25
0
25 50 75 100 125 150
T
, Temperature ( °C )
J
Fig 13. Threshold Voltage Vs. Temperature
6
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IRLML2502PbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
H
4
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
Notes: This part marking information applies to devices producedafter 02/26/2001
W= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
DAT E CODE
PART NUMBER
WORK
WEEK
LEAD FREE
YEAR
Y
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
Cu WIRE
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WEEK
W
I
= IRLML0030
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
F
G
H
J
K
50
X
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLML2502PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2012
8
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