IRLML6401TR [INFINEON]

HEXFETPower MOSFET; ?? HEXFET功率MOSFET


型号：	IRLML6401TR
厂家：	Infineon
描述：	HEXFETPower MOSFET ?? HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件：	总9页 (文件大小：147K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 93756D

IRLML6401

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= -12V

R_DS(on)= 0.05Ω

l 1.8V Gate Rated

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device design

that HEXFET^power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint. This package, dubbed the Micro3, is ideal for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

suchasportableelectronicsandPCMCIAcards.Thethermal

resistance and power dissipation are the best available.

Micro3

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-12

-4.3

-3.4

-34

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 8.0

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

www.irf.com

04/29/03

IRLML6401

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-12 ––– –––

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= -250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

––– -0.007 ––– V/°C Reference to 25°C, I_D= -1mA

––– ––– 0.050

––– 0.085

––– 0.125

-0.40 -0.55 -0.95

8.6 ––– –––

––– ––– -1.0

––– ––– -25

––– ––– -100

––– ––– 100

V_GS= -4.5V, I_D= -4.3A

Ω

R_DS(on)

Static Drain-to-Source On-Resistance

V_GS= -2.5V, I_D= -2.5A

V_GS= -1.8V, I_D= -2.0A

V_DS= V_GS, I_D= -250µA

V_DS= -10V, I_D= -4.3A

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

V_DS= -12V, V_GS= 0V

I_DSS

Drain-to-Source Leakage Current

µA

V_DS= -9.6V, V_GS= 0V, T_J= 55°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -8.0V

I_GSS

V_GS= 8.0V

I_D= -4.3A

Q_g

––– 10

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

––– 1.4 2.1

––– 2.6 3.9

––– 11 –––

––– 32 –––

––– 250 –––

––– 210 –––

––– 830 –––

––– 180 –––

––– 125 –––

nC V_DS= -10V

V_GS= -5.0V

V_DD= -6.0V

I_D= -1.0A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_D= 6.0Ω

R_G= 89Ω

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

pF V_DS= -10V

ƒ = 1.0MHz

Reverse Transfer Capacitance

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

I_S

MOSFET symbol

showing the

-1.3

-34

––– –––

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

––– ––– -1.2

T_J= 25°C, I_S= -1.3A, V_GS= 0V

––– 22

––– 8.0

T_J= 25°C, I_F= -1.3A

Q_rr

nC di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Surface mounted on 1" square single layer 1oz. copper FR4 board,

steady state.

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Starting T_J= 25°C, L = 3.5mH

R_G= 25Ω, I_AS= -4.3A.

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IRLML6401

100

VGS

TOP

-7.0V

-5.0V

-4.5V

-3.0V

-2.5V

- 1.8V

-1.5V

TOP

-7.0V

-5.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

BOTTOM -1.0V

-1.0V

0.1

0.01

0.1

0.01

20µs PULSE WIDTH

Tj = 150°C

20µs PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

100.0

10.0

1.0

-4.3A

= 25°C

1.5

= 150°C

1.0

0.5

0.0

= -12V

20µs PULSE WIDTH

=-4.5V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

1.0

1.5

2.0

2.5

3.0

3.5

4.0

T , Junction Temperature ( C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRLML6401

1200

-4.3A

= 0V,

f = 1 MHZ

= C + C

SHORTED

=-10V

iss

= C

1000

800

600

400

200

rss

= C + C

oss

Ciss

Coss

Crss

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

100us

1ms

T = 150 C

T = 25 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.2

0.1

0.6

1.0

1.4

1.8

100

-V ,Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRLML6401

5.0

4.0

3.0

2.0

1.0

0.0

TOP

-1.9A

-3.4A

BOTTOM -4.3A

100

125

150

100

125

150

Starting T , Junction Temperature ( C)

T , Case Temperature ( C)

Fig 9. Maximum Drain Current Vs.

Fig 10. Maximum Avalanche Energy

Case Temperature

Vs. Drain Current

1000

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLML6401

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.20

0.15

0.10

0.05

0.00

VGS = -1.8V

VGS = -2.5V

Id = -4.3A

VGS = -4.5V

1.0

2.0

3.0

4.0

5.0

6.0

7.0

-V

Gate -to -Source Voltage ( V )

GS,

-I , Drain Current ( A )

Fig 12. Typical On-Resistance Vs.

Fig 13. Typical On-Resistance Vs.

Gate Voltage

Drain Current

0.8

0.7

0.6

0.5

0.4

= -250µA

0.3

-75 -50 -25

75 100 125 150

, Temperature ( °C )

Fig 14. Typical Threshold Voltage Vs.

JunctionTemperature

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IRLML6401

Micro3 Package Outline

Dimensions are shown in millimeters (inches)

INCHES

MIN MAX

.032

MILLIMETERS

LEAD ASSIGNMENTS

DIM

- B -

MIN

0.82

0.02

0.38

0.10

2.67

MAX

1.11

0.10

0.54

0.15

3.05

1 - GATE

2 - SOURCE

3 - DRAIN

.044

.004

.021

.006

.120

A1 .001

.015

.004

.105

- A -

0.20 ( .008 )

.0750 BASIC

.0375 BASIC

1.90 BASIC

0.95 BASIC

.047

.083

.055

.098

1.20

2.10

0.13

0°

1.40

2.50

0.25

8°

.005 .010

0° 8°

MINIMUM RECOMMENDED FOOTPRINT

- C -

0.80 ( .031 )

0.008 (.003)

C A S B S

0.10 (.004)

0.90

( .035 )

2.00

( .079 )

NOTES:

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

0.95 ( .037 )

DIMENSIONS DO NOT INCLUDE MOLD FLASH.

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IRLML6401

Part Marking Information

Micro3

Notes: This part marking information applies to devices producedbefore02/26/2001

WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

EXAMPLE: THIS IS AN IRLML6302

PART NUMBER

WORK

WE EK

YEAR

2001

2002

2003

1994

1995

1996

1997

1998

1999

2000

DATE

CODE

PART NUMBER CODE REFERENCE:

1A= IRLML2402

1B = IRLML2803

1C = IRLML6302

1D = IRLML5103

1E = IRLML6402

1F = IRLML6401

1G= IRLML2502

1H = IRLML5203

WW = (27-52) IF PRECEDED BY ALETTER

WORK

YEAR

WE EK

2001

2002

2003

1994

1995

1996

1997

1998

1999

2000

DATE CODE EXAMPLES:

YWW = 9503 = 5C

YWW = 9532 = EF

Notes: This part marking information applies to devices produced after 02/26/2001

W= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

WORK

WEEK

YEAR

Y = YEAR

W= WEEK

2001

2002

2003

1994

1995

1996

1997

1998

1999

2000

PART NUMBER

LOT

CODE

PART NUMBER CODE REFERENCE:

A = IRLML2402

B = IRLML2803

C = IRLML6302

D = IRLML5103

E = IRLML6402

F = IRLML6401

G= IRLML2502

H = IRLML5203

W= (27-52) IF PRECEDED BY ALETTER

WORK

YEAR

WEEK

2001

2002

2003

1994

1995

1996

1997

1998

1999

2000

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IRLML6401

Micro3 Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

1.6 ( .062 )

1.5 ( .060 )

1.32 ( .051 )

1.12 ( .045 )

1.85 ( .072 )

1.65 ( .065 )

4.1 ( .161 )

3.9 ( .154 )

3.55 ( .139 )

3.45 ( .136 )

8.3 ( .326 )

7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

0.35 ( .013 )

0.25 ( .010 )

1.1 ( .043 )

0.9 ( .036 )

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 04/03

www.irf.com

IRLML6401TR [INFINEON]

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