IRLMS5703PBF [INFINEON]
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6;
| 型号： | IRLMS5703PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94896
IRLMS5703PbF
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
l P-channel MOSFET
l Lead-Free
A
D
1
2
6
D
D
VDSS = -30V
5
D
3
4
G
S
RDS(on) = 0.18Ω
Description
Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
idealforapplicationswhereprintedcircuitboardspace
isatapremium. It'suniquethermaldesignandRDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Micro6™
Absolute Maximum Ratings
Parameter
Max.
-2.4
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @- 10V
Pulsed Drain Current
-1.9
A
-13
PD @TA = 25°C
Power Dissipation
1.7
W
mW/°C
V
Linear Derating Factor
13
VGS
Gate-to-Source Voltage
± 20
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
75
°C/W
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1
1/18/05
IRLMS5703PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.01 V/°C Reference to 25°C, ID = -1mA
0.180
0.325
-1.0
1.1
-1.0
-25
100
-100
VGS = -10V, ID = -1.6A
VGS = -4.5V, ID = -0.80A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.80A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
7.2
11
ID = -1.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
1.4 2.1
2.3 3.4
10
12
20
8.4
170
89
44
nC VDS = -24V
VGS = -10V, See Fig. 6 and 9
VDD = -15V
RiseTime
ID = -1.6A
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.2Ω
RD = 9.2Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-1.7
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-13
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
-1.2
V
TJ = 25°C, IS = -1.6A, VGS = 0V
TJ = 25°C, IF = -1.6A
29
27
44
41
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ -1.6A, di/dt ≤ -140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 5sec.
2
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IRLMS5703PbF
100
10
1
100
10
1
VGS
- 15V
VGS
- 15V
- 10V
TOP
TOP
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
T
= 150°C
J
J
A
A
10
0.1
0.1
0.1
1
10
0.1
1
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= -1.6A
D
T = 25°C
J
TJ = 150°C
VDS = -10V
20µs PULSE WIDTH
V
= -10V
GS
0.1
A
8.0A
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRLMS5703PbF
350
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -1.6A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
ds
V
V
= -24V
= -15V
DS
DS
= C
gd
300
250
200
150
100
50
= C + C
ds
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
A
A
1
10
100
0
2
4
6
8
10
12
-V , Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T = 150°C
J
100µs
1ms
T = 25°C
J
1
10ms
T
= 25°C
= 150°C
A
T
J
V
= 0V
Single Pulse
GS
A
0.1
0.1
A
100
0.4
0.6
0.8
1.0
1.2
1.4
1
10
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLMS5703PbF
RD
VDS
Q
G
VGS
-10V
D.U.T.
RG
Q
Q
-
GS
GD
+
VDD
V
-10V
G
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
d(on)
d(off)
V
50KΩ
GS
.2µF
12V
10%
.3µF
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 10b. Switching Time Waveforms
Fig 9b. Gate Charge Test Circuit
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS5703PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-channel HEXFET® power MOSFET s
6
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IRLMS5703PbF
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
-B-
2.80 (.111 )
2X 0.95 (.0375 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
3
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2.20 (.087 )
2
3
D
G
D
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
0O -10O
0.20 (.007 )
6X
1.30 (.051 )
0.90 (.036 )
0.09 (.004 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 (SOT23 6L) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WE E K
YEAR
Y
W
Y = YEAR
W= WEEK
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
TOP
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = IR L MS 1902
B = IRLMS1503
C = IRL MS 6702
D = IRLMS5703
E = IRLMS6802
F = IRLMS4502
G = IR LMS 2002
H = IRLMS6803
W= (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WE E K
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
Note: A line above the work week
(as shown here) indicates Lead-Free.
K
50
51
52
X
Y
Z
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7
IRLMS5703PbF
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/05
8
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