IRLR014NTRLPBF [INFINEON]
Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRLR014NTRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95551B
IRLR014NPbF
IRLU014NPbF
HEXFET® Power MOSFET
l Logic-LevelGateDrive
l SurfaceMount(IRLR024N)
l StraightLead(IRLU024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
D
VDSS = 55V
RDS(on) = 0.14Ω
G
ID = 10A
S
Description
FifthGenerationHEXFETsfromInternationalRectifierutilize
advanced processing techniques to achieve the lowest
possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
I-Pak
IRLR014NPbF IRLU014NPbF
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
D @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
10
I
7.1
A
IDM
40
PD @TC = 25°C
Power Dissipation
28
W
W/°C
V
Linear Derating Factor
0.2
VGS
EAS
IAR
Gate-to-Source Voltage
± 16
Single Pulse Avalanche Energy
Avalanche Current
35
6.0
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
2.8
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
5.3
50
Units
RθJC
RθJA
RθJA
°C/W
110
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
10/01/10
IRLR/U014NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.14
––– ––– 0.21
VGS = 10V, ID = 6A
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS = 4.5V, ID = 5A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 6A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS(th)
gfs
Gate Threshold Voltage
1.0
3.1
––– –––
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 7.9
––– ––– 1.4
––– ––– 4.4
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
6.5 –––
47 –––
12 –––
23 –––
VDD = 28V
ID = 6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω, VGS = 5.0V
RD = 4.5Ω, See Fig. 10
Between lead,
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
––– 265 –––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
–––
–––
80 –––
38 –––
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
––– –––
––– –––
10
40
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
V
TJ = 25°C, IS = 6A, VGS = 0V
––– 37
––– 48
56
71
nS
TJ = 25°C, IF = 6A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.96mH
RG = 25Ω, IAS = 6A. (See Figure 12)
ꢀ This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
ISD ≤ 6.0A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
www.irf.com
IRLR/U014NPbF
100
10
1
100
10
1
VGS
VGS
TOP
15V
TOP
T
15V
10V
10V
5.0V
5.0V
4.5V
4.5V
3.5V
3.5V
3.0V
3.0V
2.7V
2.7V
B
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 175 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
10A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
10
1
V
= 50V
DS
V
=10V
20µs PULSE WIDTH
GS
0.1
2.0
4.0
6.0
8.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLR/U014NPbF
15
10
5
500
I
D
= 6 A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
C
= C
V
V
= 44V
= 27V
rss
gd
DS
DS
C
= C + C
400
300
200
100
0
oss
ds
gd
C
C
iss
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
°
T = 25 C
J
V
= 0 V
GS
0.1
0.1
0.2
1
10
100
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRLR/U014NPbF
RD
10.0
8.0
6.0
4.0
2.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
1
P
2
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U014NPbF
60
50
40
30
20
10
0
I
D
TOP
2.4A
5.0A
15V
BOTTOM 6.0A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
10V
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
V
J
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRLR/U014NPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRLR/U014NPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 1 = 2001
WE E K 16
IRFR120
116A
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly lineposition
AS S EMBL Y
LOT CODE
indicates "L ead-F ree"
"P" in assembly lineposition indicates
"L ead-F ree" qualification to the cons umer-level
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
OR
IRFR120
12 34
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TOTHE
CONSUMER LEVEL (OPTIONAL)
AS S EMBL Y
LOT CODE
YEAR 1 = 2001
WE E K 16
A = AS S E MB L Y S I T E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRLR/U014NPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S E MB LY
DAT E CODE
YEAR 1 = 2001
WEEK 19
RECTIFIER
LOGO
IRFU120
119A
78
LOT CODE 5678
ASSEMBLED ON WW19, 2001
IN THE ASSEMBLY LINE "A"
56
LINE A
ASSEMBLY
LOT CODE
Note: "P" in assembly lineposition
indicates Lead-Free"
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
IRFU120
56 78
YEAR 1 = 2001
AS S EMBL Y
LOT CODE
WEEK 19
A = AS S EMBLY S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRLR/U014NPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information 10/2010
10
www.irf.com
相关型号：
IRLR014NTRR
Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
INFINEON
IRLR014NTRRPBF
Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRLR024
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO
INFINEON
©2020 ICPDF网 联系我们和版权申明