IRLR024ZTRPBF [INFINEON]
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRLR024ZTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95773B
IRLR024ZPbF
IRLU024ZPbF
HEXFET® Power MOSFET
Features
n Logic Level
D
n Advanced Process Technology
n UltraLowOn-Resistance
n 175°COperatingTemperature
n Fast Switching
n Repetitive Avalanche Allowed up to Tjmax
n Lead-Free
VDSS = 55V
R
DS(on) = 58mΩ
G
ID = 16A
S
Description
This HEXFET® Power MOSFET utilizes the latest
processingtechniquestoachieveextremelylowon-
resistancepersiliconarea.Additionalfeaturesofthis
design area175°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
thisdesignanextremelyefficientandreliabledevice
for use in a wide variety of applications.
D-Pak
I-Pak
IRLR024ZPbF IRLU024ZPbF
Absolute Maximum Ratings
Parameter
Max.
Units
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ T = 25°C
C
16
D
D
@ T = 100°C
C
11
A
64
DM
P
@T = 25°C Power Dissipation
C
35
W
W/°C
V
D
Linear Derating Factor
0.23
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
± 16
GS
EAS (Thermally limited)
AS (Tested )
25
mJ
E
Single Pulse Avalanche Energy Tested Value
Avalanche Current
25
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
Operating Junction and
mJ
T
J
-55 to + 175
T
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
STG
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
4.28
40
Units
Rθ
Rθ
Rθ
Junction-to-Case
JC
JA
JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET® isaregisteredtrademarkofInternationalRectifier.
www.irf.com
1
10/01/10
IRLR/U024ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
55
–––
–––
V
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
–––
Static Drain-to-Source On-Resistance –––
–––
46
58
80
VGS = 10V, ID = 9.6A
mΩ
RDS(on)
–––
–––
–––
–––
–––
–––
–––
VGS = 5.0V, ID = 5.0A
VGS = 4.5V, ID = 3.0A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 9.6A
100
3.0
–––
20
VGS(th)
Gate Threshold Voltage
1.0
7.4
V
S
gfs
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
VDS = 55V, VGS = 0V
250
200
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 16V
GS = -16V
ID = 5.0A
DS = 44V
––– -200
V
Qg
Qgs
Qgd
td(on)
tr
6.6
1.6
3.9
8.2
43
9.9
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
V
VGS = 5.0V
VDD = 28V
ID = 5.0A
Rise Time
td(off)
tf
Turn-Off Delay Time
19
ns
RG = 28 Ω
VGS = 5.0V
Fall Time
16
LD
Internal Drain Inductance
4.5
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
380
62
–––
–––
–––
–––
–––
–––
Coss
Output Capacitance
V
Crss
Reverse Transfer Capacitance
Output Capacitance
39
Coss
180
50
Coss
Output Capacitance
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 44V
Coss eff.
Effective Output Capacitance
81
V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
Continuous Source Current
–––
–––
16
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
I
–––
–––
64
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
16
1.3
24
17
V
T = 25°C, I = 9.6A, V
= 0V
GS
SD
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 9.6A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
t
11
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRLR/U024ZPbF
100
10
1
100
10
1
VGS
10V
VGS
10V
TOP
TOP
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM
BOTTOM
3.0V
3.0V
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
15
T
= 25°C
J
T
= 175°C
J
10
5
T = 175°C
J
T
= 25°C
V
J
V
= 8.0V
DS
= 10V
DS
300µs PULSE WIDTH
≤
60µs PULSE WIDTH
0.1
0
0
2
4
6
8
10
12
0
2
4
6
8
10 12 14 16
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRLR/U024ZPbF
10000
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 5.0A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 44V
= 28V
= 11V
DS
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
1000
100
10
C
iss
C
oss
C
rss
1
10
100
0
1
2
3
4
5
6
7
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1
1msec
Tc = 25°C
Tj = 175°C
T
= 25°C
1.5
J
V
= 0V
10msec
GS
Single Pulse
0.1
0.0
0.5
1.0
2.0
2.5
3.0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLR/U024ZPbF
2.5
2.0
1.5
1.0
0.5
16
14
12
10
8
I
= 5.0A
= 5.0V
D
V
GS
6
4
2
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T , Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
D = 0.50
1
0.20
0.10
0.05
R1
R1
R2
R2
0.1
0.01
0.02
0.01
Ri (°C/W) τi (sec)
τ
J τJ
τ
2.354
0.000354
τ
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
1.926
0.001779
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U024ZPbF
100
80
60
40
20
0
15V
I
D
TOP
1.2A
1.8A
BOTTOM 9.6A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.5
2.0
1.5
1.0
V
G
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
-75 -50 -25
0
25 50 75 100 125 150 175
T , Temperature ( °C )
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRLR/U024ZPbF
100
10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
Duty Cycle = Single Pulse
0.01
∆
assuming
Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
30
25
20
15
10
5
TOP
BOTTOM 1% Duty Cycle
= 9.6A
Single Pulse
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs.Temperature
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IRLR/U024ZPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRLR/U024ZPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 1 = 2001
WE E K 16
IRFR120
116A
12
34
LINE A
Note: "P" in assembly lineposition
AS S EMBL Y
LOT CODE
indicates "L ead-F ree"
"P" in assembly lineposition indicates
"L ead-F ree" qualification to the cons umer-level
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
OR
IRFR120
12 34
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TOTHE
CONSUMER LEVEL (OPTIONAL)
AS S EMBL Y
LOT CODE
YEAR 1 = 2001
WE E K 16
A = AS S E MB L Y S I T E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRLR/U024ZPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S E MB LY
DAT E CODE
YEAR 1 = 2001
WEEK 19
RECTIFIER
LOGO
IRFU120
119A
78
LOT CODE 5678
ASSEMBLED ON WW19, 2001
IN THE ASSEMBLY LINE "A"
56
LINE A
ASSEMBLY
LOT CODE
Note: "P" in assembly lineposition
indicates Lead-Free"
OR
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 1 = 2001
AS S EMBL Y
LOT CODE
WEEK 19
A = AS S EMBLY S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRLR/U024ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.54mH
RG = 25Ω, IAS = 9.6A, VGS =10V. Part not
This value determined from sample failure population.
100% tested to this value in production.
recommended for use above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material)
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
80% VDSS
.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2010
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11
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