IRLR120PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLR120PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：1812K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95382A
IRLR120PbF
IRLU120PbF
Lead-Free
www.irf.com
1
12/07/04
IRLR/U120PbF
2
www.irf.com
IRLR/U120PbF
www.irf.com
3
IRLR/U120PbF
4
www.irf.com
IRLR/U120PbF
www.irf.com
5
IRLR/U120PbF
6
www.irf.com
IRLR/U120PbF
www.irf.com
7
IRLR/U120PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB LY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLYLINE "A"
12
34
LINE A
Note: "P" in assembly line position
AS S E MB L Y
LOT CODE
indicates "Lead-F ree"
OR
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE E K 16
A = AS S E MB L Y S I T E CODE
8
www.irf.com
IRLR/U120PbF
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
WITH ASSEMBLY
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 19
IRFU120
919A
78
LOT CODE 5678
AS SEMBLED ON WW19, 1999
56
IN THE ASSEMBLY LINE "A"
LINE A
AS S E MB LY
LOT CODE
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
56
78
YEAR 9 = 1999
AS S E MB LY
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
www.irf.com
9
IRLR/U120PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
10
www.irf.com
相关型号：
IRLR121
Power Field-Effect Transistor, 7.9A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
SAMSUNG
IRLR130ATM
Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
IRLR210ATM
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明