IRLR6225 [INFINEON]
20V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装;
| 型号： | IRLR6225 |
| 厂家： | 
Infineon |
| 描述： | 20V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装 |
| 文件： | 总9页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97594
IRLR6225PbF
HEXFET® Power MOSFET
VDS
20
V
D
S
D
RDS(on) max
(@VGS = 4.5V)
4.0
m
Ω
S
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
5.2
m
Ω
G
G
48
2.2
42
nC
Ω
A
D-Pak
IRLR6225PbF
RG (typical)
ID
G
D
S
Gate
Drain
Source
Applications
• Battery Protection Switch
Features and Benefits
Features
Benefits
Industry-Standard Pinout
Multi-Vendor Compatibility
results in Easier Manufacturing
Compatible with Existing Surface Mount Techniques
⇒
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
75
IRLR6225PbF
IRLR6225TRPbF
D-PAK
D-PAK
Tape and Reel
2000
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
20
Units
VDS
V
VGS
±12
100
63
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
400
63
Power Dissipation
PD @TC = 25°C
PD @ TC = 100°C
W
W/°C
°C
Power Dissipation
25
Linear Derating Factor
0.5
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Notes through are on page 8
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1
11/15/2010
IRLR6225PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
6.6
–––
V
∆ΒVDSS/∆TJ
RDS(on)
–––
–––
–––
0.5
3.2
4.0
5.2
1.1
VGS = 4.5V, ID = 21A
VGS = 2.5V, ID = 17A
mΩ
4.2
VGS(th)
Gate Threshold Voltage
0.8
V
VDS = VGS, ID = 50µA
V
∆
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
205
–––
–––
–––
–––
–––
–––
–––
-4.0
–––
–––
–––
––– mV/°C
GS(th)
IDSS
1.0
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
VGS = -12V
gfs
Qg
–––
48
–––
72
S
VDS = 10V, ID = 21A
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
2.6
3.6
19
–––
–––
–––
–––
–––
–––
VDS = 10V
Qgs2
Qgd
VGS = 4.5V
ID = 17A
nC
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
23
See Fig.17 & 18
Qsw
23
Qoss
21
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
2.2
9.7
37
63
52
–––
–––
–––
–––
–––
Ω
V
DD = 10V, VGS = 4.5V
ID = 17A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG=1.8Ω
See Fig.15
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 3770 –––
VGS = 0V
–––
–––
915
650
–––
–––
VDS = 10V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
170
17
Units
mJ
A
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
Repetitive Avalanche Energy
EAR
6.3
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
Continuous Source Current
MOSFET symbol
–––
–––
––– 100
(Body Diode)
showing the
integral reverse
A
G
ISM
Pulsed Source Current
(Body Diode)
–––
400
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
35
1.2
53
86
V
TJ = 25°C, IS = 17A, VGS = 0V
ns TJ = 25°C, IF = 17A, VDD = 10V
di/dt = 200A/µs
nC
Qrr
ton
57
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
2.0
Units
Junction-to-Case
RθJC
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Rθ
50
°C/W
JA
RθJA
110
2
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IRLR6225PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
4.5V
3.5V
3.0V
2.3V
2.0V
1.8V
1.5V
BOTTOM
BOTTOM
1.5V
1.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 150°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1000
I
= 42A
D
V
= 4.5V
GS
1.4
1.2
1.0
0.8
0.6
100
10
1
T
= 150°C
J
T
= 25°C
V
J
= 10V
DS
≤
60µs PULSE WIDTH
0.1
0.0
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 17A
V
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
= C
rss
oss
gd
= C + C
= 16V
= 10V
= 4.0V
DS
ds
gd
V
DS
V
DS
C
C
iss
6.0
oss
rss
C
4.0
2.0
0.0
100
0
25
50
75
100
125
1
10
, Drain-to-Source Voltage (V)
100
V
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLR6225PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
100
10
1
J
100µsec
1msec
Limited by
Package
T
J
= 25°C
10msec
DC
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
0
1
10
100
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Limited By Package
80
60
40
20
0
I
= 50µA
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Temperature ( °C )
J
, Case Temperature (°C)
T
C
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case(Bottom)Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLR6225PbF
8
7
6
5
4
3
2
1
700
600
500
400
300
200
100
0
I
I
= 17A
D
D
TOP
5.9A
8.6A
BOTTOM 17A
T
T
= 125°C
= 25°C
J
J
0
2
4
6
8
10
12
14
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRLR6225PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRLR6225PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRLR6225PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
D-PAK
Moisture Sensitivity Level
RoHS compliant
(per JEDEC J-S T D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.2mH, RG = 50Ω, IAS = 17A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continouous current based on maximum allowable junction temperature. Package is limited to 42A by
production test capability.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/2010
8
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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