IRLR8103VTRPBF [INFINEON]
Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3;型号: | IRLR8103VTRPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 开关 脉冲 晶体管 |
文件: | 总9页 (文件大小:215K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95093A
IRLR8103VPbF
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
D
• 100% RG Tested
• Lead-Free
G
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
S
D-Pak
DEVICE CHARACTERISTICSꢀ
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
IRLR8103V
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
7.9 mΩ
27 nC
12 nC
RDS(on)
QG
The IRLR8103V offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
QSW
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
QOSS
29nC
Absolute Maximum Ratings
Parameter
Symbol
IRLR8103V
Units
VDS
30
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
Continuous Drain or Source Current
(VGS > 10V)
TC = 25°C
TC= 90°C
91
I
D
A
63
I
363
Pulsed Drain Current
DM
TC = 25°C
TC = 90°C
115
Power Dissipation
P
W
°C
A
D
60
TJ , T
IS
-55 to 150
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
STG
91
ISM
363
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
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Symbol
RθJA
Typ.
–––
Max.
50
Units
°C/W
RθJC
–––
1.09
1
12/0604
IRLR8103VPbF
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-Source
Symbol Min Typ Max Units
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 15A
BVDSS
30
––– –––
V
RDS(on)
––– 6.9 9.0
Ω
m
V
V
GS = 4.5V, ID = 15A
DS = VGS, ID = 250µA
On-Resistance
Gate Threshold Voltage
––– 7.9 10.5
1.0 ––– 3.0
VGS(th)
IDSS
V
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0
Drain-to-Source Leakage Current
––– ––– 50
µA
––– ––– 20
––– ––– 100
µA
V
V
DS = 24V, VGS = 0, TJ = 100°C
GS = ± 20V
IGSS
QG
Gate-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate to Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
––– ––– ±100 nA
VGS = 5V, ID = 15A, VDS = 16V
GS = 5V, VDS < 100mV
–––
–––
27 –––
23 –––
V
QG
QGS1
QGS2
QGD
QSW
QOSS
RG
––– 4.7 –––
––– 2.0 –––
––– 9.7 –––
nC
V
DS = 16V, ID = 15A
–––
–––
12 –––
29 –––
VDS = 16V, VGS = 0
Gate Resistance
0.8 ––– 3.1
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
10 –––
–––
VDD = 16V
Rise Time
9
ID = 15A
ns
Turn-Off Delay Time
24 –––
18 –––
VGS = 5.0V
Fall Time
Clamped Inductive Load
Ciss
Coss
Crss
Input Capacitance
––– 2672 –––
––– 1064 –––
––– 109 –––
VGS = 16V, VGS=0
pF
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Rating & Characteristics
Parameter
Symbol Min Typ Max Units
Conditions
IS = 15A , VGS = 0V
VSD
Diode Forward Voltage
Reverse Recovery Charge
––– 0.9 1.3
––– 103 –––
V
Qrr
nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IF = 15A
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
–––
96 –––
nC di/dt = 700A/µs , (with 10BQ040)
VDS= 16V, VGS = 0V, IF = 15A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
2
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IRLR8103VPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM2.7V
BOTTOM2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
15A
I =
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0 6.0
7.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLR8103VPbF
5000
6
5
4
3
2
1
0
V
= 0V,
f = 1MHz
C
GS
I
D
=
15A
V
V
= 24V
= 15V
C
= C + C
gs
SHORTED
ds
DS
DS
iss
gd ,
C
= C
gd
rss
C
= C + C
4000
3000
2000
1000
0
oss ds
gd
C
iss
C
oss
C
rss
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
1000
100
10
°
T = 150 C
J
10us
100us
°
T = 25 C
J
1ms
10ms
°
T = 25 C
J
C
°
T = 150 C
Single Pulse
V
= 0 V
GS
2.0
1
0.1
0.0
1
10
100
0.4
0.8
1.2
1.6
2.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
FFiigg 77.. TTyyppiiccaall SSoouurrccee--DDrraaiinn DDiiooddee
FFoorrwwaarrdd VVoollttaaggee
Fig 8. Maximum Safe Operating Area
4
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IRLR8103VPbF
RD
VDS
100
80
60
40
20
0
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+
-
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fiigg 1100aa.. SSwwiittcchhiinngg TTiimmee TTeesstt CCiirrccuuiitt
V
DS
90%
25
50
75
100
125
150
°
10%
T , Case Temperature( C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
FFiigg 99.. Maxxiimmuumm DDrraaiinn CCuurrrreenntt VVss..
CCaassee TTeemppeerraattuurree
FFiigg 1100bb.. SSwwiittcchhiinngg TTiimmee WWaavveeffoorrmmss
10
1
D = 0.50
0.20
0.10
P
2
DM
0.1
0.05
t
1
SINGLE PULSE
0.02
t
2
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
FFiigg 1111.. MMaaxxiimmuumm EEffffeeccttiivveeTTrraannssiieennttTThheerrmmaallIImmppeeddaannccee,,JJuunnccttiioonn--ttoo--CCaassee
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5
IRLR8103VPbF
0.016
0.014
0.012
0.014
0.012
0.010
0.008
0.006
I
= 15A
VGS = 4.5V
0.010
D
VGS = 10V
0.008
0.006
0.0
2.0
4.0
6.0
8.0
0
50
100 150 200 250 300 350
, Drain Current ( A )
V
Gate -to -Source Voltage (V)
GS,
I
D
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
Q
G
VGS
50KΩ
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
6
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IRLR8103VPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
IRFU120
916A
34
YEAR 9 = 1999
12
WE EK 16
LINE A
Note: "P" in assembly lineposition
ASSEMBLY
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DATE CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 16
A= ASSEMBLY SITE CODE
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7
IRLR8103VPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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